• Fashion & Textile Research Journal
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• v.18 no.4
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• pp.412-423
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• 2016

This paper explores the possibility, and suggests an experimental procedure, of industrial application of traditional textile design techniques, such as hand silkprinting and natural dyeing. Theoretical and traditional background of this study is William Morris and his followers' Arts and Crafts Movement from the late 19th century to the early 20th century, which laid the philosophical as well as technical foundations of modern textile design tradition. Based on the basic understanding of the design philosophy, and starting from the design techniques of Morris and his successors, I made some experimental and systematic color plans reflecting and exploiting the physical traits and structure of jacquard woven silk material fabrics. And I applied hand silkscreen printing techniques on the jacquard silk fabrics of my own making, while testing various color combinations of natural dyes. After finishing final processing of design samples, I could get textile design products which met the criteria of my original expectation, i.e., eco-friendly and aesthetic design samples that can also be produced in automatized mass production system of contemporary textile industry. The conclusion of this experimental study is that I can expect the natural dyeing techniques, jacquard silk fabrics design techniques, silkprinting techniques, and the basic processes used in this study to be safely applied for contemporary commercial textile industry utilizing automatized silkscreen printing system and digital printing devices.

• Journal of Surface Science and Engineering
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• v.57 no.4
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• pp.265-273
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• 2024

An amperometric sensor for measuring indole-3-acetic acid (IAA) was studied based on a screen-printed carbon electrode (SPCE) coated with a reduced graphene oxide composite electrocatalyst. The PEI-GO dispersion is uniformly formed through a nucleophilic substitution reaction between the active amine group of Polyethyleneimine (PEI) and the epoxide group exposed on the surface of graphene oxide. And The 3-dimensional PEI-rGO AG (Polyethyleneimine-reduced graphene oxide aerogel) complex was easily prepared through simple heat treatment of the combined PEI-GO dispersion. The proposed composite catalyst electrode, PEI-rGO AG/SPCE, showed a two linear relationship in the low and high concentrations in IAA detection, and the linear equation was I_pa = 0.2883C + 0.0883 (R²=0.9230) at low concentration and Ipa = 0.00464C + 0.6623 (R²=0.9894) at high concentration was proposed, and the detection limit was calculated to be 203.5nM±33.2nM. These results showed the applicability of the PEI-rGO AG composite catalyst as an electrode material for electrocatalysts for the detection of IAA.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.161-166
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• 2007

Photovoltaic (PV) technology permits the transformation of solar light directly into electricity. For the last five years, the photovoltaic sector has experienced one of the highest growth rates worldwide (over 30% in 2006) and for the next 20 years, the average production growth rate is estimated to be between 27% and 34% annually. Currently the cost of electricity produced using photovoltaic technology is above that for traditional energy sources, but this is expected to fall with technological progress and more efficient production processes. A large scale production of solar grade silicon material of high purity could supply the world demand at a reasonably lower cost. A shift from crystalline silicon to thin film is expected in the future. The technical limit for the conversion efficiency is about 30%. It is assumed that in 2030 thin films will have a major market share (90%) and the share of crystalline cells will have decreased to 10%. Our research at Sungkyunkwan University of South Korea is confined to crystalline silicon solar cell technology. We aim to develop a technology for low cost production of high efficiency silicon solar cell. We have successfully fabricated silicon solar cells of efficiency more than 16% starting with multicrystalline wafers and that of efficiency more than 17% on single crystalline wafers with screen printing metallization. The process of transformation from the first generation to second generation solar cell should be geared up with the entry of new approaches but still silicon seems to remain as the major material for solar cells for many years to come. Local barriers to the implementation of this technology may also keep continuing up to year 2010 and by that time the cost of the solar cell generated power is expected to be 60 cent per watt. Photovoltaic source could establish itself as a clean and sustainable energy alternate to the ever depleting and polluting non-renewable energy resource.

• Journal of radiological science and technology
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• v.33 no.3
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• pp.289-294
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• 2010

The purpose of this study is an evaluation of the performance of a detector under radiographic irradiation condition by fabricating the polycrystalline $HgI_2$ film detector. The polycrystalline $HgI_2$ film detectors with thickness of 210 and $320\;{\mu}m$ were fabricated by screen print technology. Measurements of X-ray sensitivity and dark current were performed for two detectors. And measurements of the linearity of X-ray response and reproducibility were performed for the detector of thickness $320\;{\mu}m$. For applied electric field strengths from 0.05 to $2\;V/{\mu}m$ to the detector of thickness $320\;{\mu}m$, the X-ray sensitivities were measured from 233 to $1,408{\times}106\;electrons/mR{\cdot}mm^2$. And the dark currents were measured from 3.2 to $118\;pA/mm^2$. Compared with values reported by Zhong Su et al., the X-ray sensitivities exhibit about two times larger than the X-ray sensitivities measured by Zhong Su et al. And the dark currents exhibit about nine times larger than the dark currents measured by Zhong Su et al. The linearity of X-ray response acquired 0.988 as a coefficient of correlation (r). Reproducibility acquired 0.002 as a coefficient of variation. This study provides the performance data of fabricated polycrystalline $HgI_2$ film detector available for an active matrix flat panel imager under radiographic irradiation condition.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.750-760
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• 2002

In this study, three solders, Sn-37Pb, Sn-3.5Ag, and Sn-3.8Ag-0.7Cu were screen printed on both electroless Ni/Au and OSP metal finished micro-via PCBs (Printed Circuit Boards). The interfacial reaction between PCB metal pad finish materials and solder materials, and its effects on the solder bump joint mechanical reliability were investigated. The lead free solders formed a large amount of intermetallic compounds (IMC) than Sn-37Pb on both electroless Ni/Au and OSP (Organic Solderabilty Preservatives) finished PCBs during solder reflows because of the higher Sn content and higher reflow temperature. For OSP finish, scallop-like $Cu_{6}$ /$Sn_{5}$ and planar $Cu_3$Sn intermetallic compounds (IMC) were formed, and fracture occurred 100% within the solder regardless of reflow numbers and solder materials. Bump shear strength of lead free solders showed higher value than that of Sn-37Pb solder, because lead free solders are usually harder than eutectic Sn-37Pb solder. For Ni/Au finish, polygonal shaped $Ni_3$$Sn_4$ IMC and P-rich Ni layer were formed, and a brittle fracture at the Ni-Sn IMC layer or the interface between Ni-Sn intermetallic and P-rich Ni layer was observed after several reflows. Therefore, bump shear strength values of the Ni/Au finish are relatively lower than those of OSP finish. Especially, spalled IMCs at Sn-3.5Ag interface was observed after several reflow times. And, for the Sn-3.8Ag-0.7Cu solder case, the ternary Sn-Ni-Cu IMCs were observed. As a result, it was found that OSP finished PCB was a better choice for solders on PCB in terms of flip chip mechanical reliability.