• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.231-238
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• 2015

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.117-124
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• 1993

It was found that the basic principle of continuous crystal growth method was following as; the powder supplied from the feeding system is molten in the graphite crucible under the ambient gas. After forming the molten zone in the lower part of the crucible, the seed crystal is deeped into the melt and pulled down with the rotation so that the melt crystallized from the seed. When the lowering rate, rotation rate, feeding rate and temperature are correct, the single crystal can grow. The critical melt level, the feeding rate, the growth rate, the change of the shape of molten zone by the graphite susceptor and crucible, the position of work coil, the balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed which are the variables of the crystal growth and the sintering phenomenon of melt surface were researched.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.532-538
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• 1998

Emerald ($3BeO{\cdot}Al_2O_3{\cdot}6SiO_2:Cr^{3+}$) single crystal was grown by temperature gradient reflux method with using Korean natural beryl. The flux of lithium-molibudenium-vanadium oxide system was made by means of mixing the 2 sort of flux which were differently melted $Mo_3-Li_2O$ and $V_2O_5-Li_2O$ each other. The optimum composition of flux was 3 mole ratio of molibudenium. vanadium oxides to lithium oxide ($(MoO_3+V_2O_5)/Li_2O$), flux additives were substituted more less then 0.2 mole% of $K_2O$ or $Na_2O$ to the $Li_2O$ amount. The melting concentration of mixing beryl material was 3~10% content to the flux, that of $Cr_2O_3$ color dopant was 1% to the beryl amount. In the crystal growing apparatus with temperature gradient in the 3 zone furnace which was separated into the block of melt, growth and return, the solution have got to circulate continuously between $1100^{\circ}C$ and $1000^{\circ}C$ in steady state. When thermal fluctuation was treated to during 2 hrs once on a day at 950~$1000^{\circ}C$ in growth zone, the supersaturation solution was maintained, controled and emerald single crystal can be grown large crystal which was prevented from the nucleation of microcrystallite. The preferencial growth direction of hexagonal columnar emerald single crystal was the c(0001) plane of botton side and vertical to the m(1010) plane of post side.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.1
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• pp.207-213
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• 1990

Natural convection heat transfer in rectangular air enclosure was studied interferometrically and numerically for the use of adiabatic and constant temperature horizontal boundary conditions. In the isothermal horizontal boundary case with the temperature difference ratio, .DELTA. $T_{v/}$.DELTA. $T_{H}$ .simeq. 1 temperature distribution in the enclosure is strongly stratified and the average Nusselt Number is higher than that of adiabatic horizontal boundary case.ase.

• Proceedings of the Korea Water Resources Association Conference
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• 2021.06a
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• pp.61-61
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• 2021

온도 성층화는 많은 저수지와 댐에서 흔히 발생하는 현상으로 호수나 저수지의 표면 온도가 바닥보다 상대적으로 높아 깊이에 따른 열 구배를 나타낸다. 이러한 온도 성층화 현상은 여름철과 같이 상부와 하부의 온도 차가 클수록 안정적이게 나타나며 이러한 층화 현상으로 수직 확산이 제어되어 수질에 영향을 미친다고 알려져 있다. 따라서 댐이나 호수 등 층화 현상이 심한 유체 내부 바닥에 물순환장치를 설치하여 외부로부터 공기를 끌어와 하부에서 공기를 분출하여 온도 성층을 약화시키기도 한다. 물순환 장치를 설비하면 수체의 혼합이 용이해지며 물질전달이 개선되어 수질이 향상된다. 국내의 경우 대청댐, 보령댐, 영주 댐 등 많은 국내 댐 내부에 물순환장치가 설비되어있다. 본 연구에서 댐의 물순환장치의 성능을 파악하기 위해 산기식 물순환 장비가 설치되어있는 영주댐을 연구 대상 지역으로 잡았다. 연구지역의 계절별 성층구조 및 특성을 조사하기 위해, 봄, 여름, 가을 영주댐에 방문하여 관측 자료를 취득하였으며 물순환 장치는 봄철의 경우만 가동하였다. 봄철의 물순환 장치 가동 전후 관측 데이터를 바탕으로 수치모형실험을 실행하여 관측 결과와 비교 및 검증하였다. 이를 바탕으로 여름, 가을에 물순환장치를 가동하였을 경우 댐 내부 수체의 혼합과정을 살펴보는 연구를 진행하였다. 본 연구는 CFD (Computational Fluid Dynamic) 시뮬레이션을 수행하기 위해 오픈 소스 소프트웨어 OpenFOAM(version 4.0)에서 열 전달이 포함되어있는 비압축성 VOF 솔버를 사용하였다. 본 솔버는 물과 공기를 동시에 나타낼 수 있으며 온도의 확산 방정식을 포함하고 있다. 또한 유동해석 수행 시 사용한 물순환장치의 효울은 실제 장치의 효율과 동일하다. 본 연구의 목표는 다음과 같다. (1) 관측만으로 파악하기 어려운 수체의 혼합거동을 유동해석 자료를 통해 면밀히 살펴보고 (2) 봄철 물순환 장치가 작동하기 전후 자료를 바탕으로 여름 및 가을철 물순환장치 가동 전후 데이터를 유동해석 자료로 취득한다. (3) 또한 물순환장치 가동 전후 데이터를 통해 계절별 혼합 효율을 취득한다.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 1998.04a
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• pp.9-9
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• 1998

가스터빈 연소기의 난류유동장을 구성하는 기본적인 유동형태는 크게 밀폐관내의 돌연 확대를 가지는 동축제트, 선회유동, 그리고 연소공기공 및 회석공기공을 통해 연소실에 수직방향으로 유입되는 제트유동 등으로 분류할 수 있다. 실제 가스터빈 연소기내의 난류유동장을 수치해석하기 위해서는 임의의 형상을 갖는 3차원 유동장을 모사할 수 있는 수치해석법과 고차정확도를 유지하면서도 수렴안정성을 만족시키는 대류항 처리기법 등과 같은 수치모델의 개발이 선행되어야 하며, 이와 함께 복잡한 난류연소유동장을 정확히 묘사할 수 있는 난류모델 및 난류연소모델의 개발 및 검증이 가장 중요한 요인이 된다. 또한 가스터빈 연소기의 최적 설계는 넓은 작동구간에서 높은 효율, NOx 및 CO 배기량의 저감, 희박연소 가연한계의 확장, 연소계통에서의 낮은 압력강하, 낮은 연소벽면온도와 온도구배를 유지시키기 위한 공기에 의한 충분한 냉각 같은 서로 상충되는 설계조건을 만족해야 한다. 그리고, 이러한 상충된 연소설계조건들을 충족시키는 최적 연소기의 설계를 위해서는 실험적인 연구뿐만 아니라 연소기내의 물리적인 현상을 잘 반영할 수 있는 물리적 모델을 바탕으로 한 연소유동의 해석적인 연구를 필요로 한다. 본 연구에서는 원통형 가스터빈 연소기의 등온 및 연소유동장, 그리고 연소기와 연결되는 Scroll 내부의 난류유동장에 대한 수치해석을 수행하여 수치 및 물리모델의 예측능력을 검증하였고, 가스터빈 연소유동장 해석에 관련된 중요 논점들에 대하여 심도있게 분석하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.1
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• pp.12-17
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• 1993

Growth runs of KTP single crystals were carried out by the hydrothermal method. KTP powders used for the crystal growth were prepared as a single phase by the solid state reaction of a stoichiometric mixture of $KH_2PO_4 and TiO_2$ at TEX>$800^{\circ}C$ and subsequently by the hydrothermal treatment at $250^{\circ}C$ 4m KF solution. The most effective solvents for the crystal growth of KTP were KF and K $K_2HPO_4$ solutions. Solubilities of KTP in these solutions were positive over the range $350~450^{\circ}C$.Seed crystals of good quality could be obtained by the horizontal temperature gradient method at temperatures over the range 380~430^{\circ}C$ in these solutions. The hydrothermal conditions for the high growth rates of seed crystals are as follows: growth method; vertical temperature gradient method, solvent; 4m KF or $K_2HPO_4$ solution, temperature region; $400~450^{\circ}C$, pressure region; $1000~1500kg/cm^2$, where solubility of KTP was large enough to proceed the growth. Under such conditions, seed crystals of KTP are grown at a rate of approximately 0.06-0.08mm/day in the direction of the c-axis. Morphologies of grown crystals tended to be bounded by (100), (011) and (201) faces.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.83-91
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• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.251-258
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• 1995

In an effort to increase the thermoelectric figure of merit by reducing the thermal conductivity, the unidirectionally solidified n-type (Bi, Pb)-Te based alloys which form a $Bi_{2}Te_{3}-PbBi_{4}Te_{7}$eutectic lamellar structure were investigated with the microstructural control at various solidification conditions. PbBi_{4}Te_{7}$ lamellae were grown on cleavage plane(0001) of $Bi_{2}Te_{3}$ and the interlamellar spacing decreased from 10.4 $\mu \textrm{m}$to 3.2$\mu \textrm{m}$ with growth velocity variation from 1.4 \times 10^{-4}$cm/sec to $8.3 \times 10^{-4}$cm/sec. Seebeck coefficient was constant, $\mid$$\alpha$$\mid$=29 $\mu$ V/K regardless of growth direction, growth velocity and temperature gradient. Electrical conductivity showed a tendency to decrease slightly with growth velocity and it parallel to growth direction was about three times as large as perpendicular direction. The figures of merit were varied differently from Seebeck coefficients and electrical conductivities depending on the growth direction, growth velocity and temperature gradients. They showed the relative increase in case of perpendicular direction compared with parallel to growth direction. It is believed to be due to the reduction of the thermal conductivity according to decrease of the interlamellar spacing.

• Korean Journal of Environment and Ecology
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• v.29 no.5
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• pp.651-680
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• 2015

In order to investigate vertical plant distribution on Namdeogyu of Mt. Deogyu National Park by temperature change, vascular plants of nine areas with 100-meter-high difference were surveyed from the Deogsangyo (650m alt.) to the Namdeogyusan (1,507m alt.). A total of 455 taxa belonging to 99 families, 280 genera, 402 species, 5 subspecies, 43 varieties, 4 forms and 1hybrid were vegetated on survey areas. Around 700 m high did species diversity of vascular plants decrease rapidly. The Detrended correspondence analysis (DCA) divided distribution of vascular plants into five groups; areas below 700m alt., 700~1,100m alt., 1,100~1,300m alt., and areas above 1,300m alt.. These results showed that vegetation of vascular plants on investigated areas has high correlation with climate elements of temperature. Vascular plants should be crowded within their own optimal ranges of vegetation. Climate change would result in shift of these distribution ranges, and thus vegetation shift will be happened accordingly.