• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.345-353
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• 2011

An 1.485 Gbit/s video signal transmission system using the carrier frequency of H-band(220~325 GHz) was implemented and demonstrated for the first in domestic. The RF front-end was composed of Schottky barrier diode sub-harmonic mixers(SHM) and frequency triplers, and diagonal horn antennas for transmitter and receiver, respectively. The transmitted carrier frequency of 246 GHz was implemented in the H-band, and LO frequencies of H-band SHM is 120 GHz and 126 GHz for transmit and receive chains, respectively. The modulation scheme is ASK(Amplitude Shift Keying) where IF frequency is 5.94 GHz and the envelop detection was used in heterodyne receiver architecture, and direct detection receiver using ZBD(Zero Bias Detector) was implemented as well. The 1.485 Gbit/s video signal with HD-SDI format was successfully transmitted over wireless link distance of 5 m and displayed on HDTV at the transmitted average output power of 20 ${\mu}W$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.1
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• pp.229-234
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• 1999

We analyzed the reliability characteristics in platinum schottky diodes with variations of n-type silicon substrates concentrations and temperature variations of measurements. The parameters of reliability measurement analysis are saturation current. turn-on voltage and ideality factor in the forward bias, the breakdown voltage in the reverse bias with device shapes. The shape of devices are square type and long rectangular type for edge effect. As a result, we analyzed that the forward turn-on voltage, barrier height, dynamic resistance and reverse breakdown voltage were decreased but ideality factor and saturation current were increased by increased concentration in platinum and n-silicon junction parts. In measurement temperature(RT, $50^{\circ}C$, $75^{\circ}C$), the extracted electrical parameter values of reliability characteristics were increased at the higher temperature under the forward and reverse bias. The long rectangular type devices were more decreased than the square type in reverse breakdown voltage by tunneling effects of edge part.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.298-302
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• 2023

In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and hafnium oxide (HfO₂) on the breakdown characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was higher than that of SBDs without a field plate. The higher dielectric constant of HfO₂ contributed to the superior reduction in electric field concentration at the Schottky junction edge from 5.4 to 2.4 MV/cm. The SBDs with HfO₂ field plate showed the highest BV of 720 V, and constant specific on-resistance (R_on,sp) of 5.6 mΩ·cm², resulting in the highest Baliga's figure-of-merit (BFOM) of 92.0 MW/cm². We also investigated the effect of dielectric thickness and field plate length on BV.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1448-1452
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• 2004

In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

• Journal of IKEEE
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• v.20 no.1
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• pp.45-53
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• 2016

This paper presents a CMOS interface circuit for vibration energy harvesting with MPPT (Maximum Power Point Tracking). In the proposed system a PMU (Power Management Unit) is employed at the output of a DC-DC boost converter to provide a regulated output with low-cost and simple architecture. In addition an MPPT controller using FOC (Fractional Open Circuit) technique is designed to harvest maximum power from vibration devices and increase efficiency of overall system. The AC signal from vibration devices is converted into a DC signal by an AC-DC converter, and then boosted through the DC-DC boost converter. The boosted signal is converted into a duty-cycled and regulated signal and delivered to loads by the PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a DC-DC boost converter architecture using a schottky diode is employed for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process, and the designed chip occupies $915{\mu}m{\times}895{\mu}m$. Simulation results shows that the maximum power efficiency of the entire system is 83.4%.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.199-205
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• 2010

The electrical properties and defect states in ZnO substrates were studied during high-energy electron beam irradiations. 1 MeV and 2 MeV electron-beam with dose of $1{\times}10^{16}$ electrons/$cm^2$ were irradiated on Zn-surface of the sample. In the sample irradiated by 1 MeV, the leakage current was increased by electron-beam induced surface defects, while the enhancement of on/off property and the decrease of leakage current appeared in the 2 MeV irradiated sample. From the deep level transient spectroscopy measurements for these samples, it showed that the defect states with the activation energies of $E_c$-0.33 eV and $E_v$+0.8 eV are generated during the high energy electron-beam irradiation. Especially, it considered that the $E_c$-0.33 eV state related with O-vacancy affects to their electrical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.3
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• pp.59-64
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• 2002

In the RFID system using ISM-band, The tag mounted at the object has used the DC power by rectifying the RF signals of the small antenna for operating the micro-controller and memory. The performance of the tag would be reduced because of the second harmonics generated by the nonlinearity of the semiconductor and the spurious signal excited the high order mode of the antenna. This paper has realized the novel type low-pass filter with "the Stub-I type DGS slot structure" to improve the efficiency of the tag by suppressing the harmonics. The optimized frequency character at the pass-band/stop-band has obtained by tuning the stub width and slit width of I type slot. The measured result of the LPF has the cutoff frequency 3.25 GHz, the insertion loss about -0.29~-0.3 dB at pass-band 2.4 GHz~2.5 GHz, the return loss about -27.688~-33.665 dB at pass-band with a good performance, and the suppression character is about -19.367 dB at second harmonics frequency 4.9 GHz. This DGS LPF may be applied the various application as the RFID, WLAN to improve the efficiency of the system by suppressing the harmonics and spurious signals. 

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.138-143
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• 2016

The designed and fabricated millimeter-wave security screening system receives radiation energy from an object and a human body. The imaging system consist of sixteen array antennas, sixteen four-stage LNAs, sixteen detectors, an infrared camera, a CCD camera, reflector, and a focusing lens. This system requires high sensitivity and wide bandwidth to detect the input thermal noise. The LNA module of the system has been measured to have 65.8 dB in average linear gain and 82 GHz~102 GHz in bandwidth to enhance the sensitivity for thermal noise, and to receive it over a wide bandwidth. The detector is used for direct current (DC) output translation of millimeter-wave signals with a zero bias Schottky diode. The lens and front-end of the millimeter-wave sensor are important in the system to detect the input thermal noise signal. The frequency range in the receiving sensitivity of the detectors was 350 to 400 mV/mW at 0 dBm (1 mW) input power. The developed W-band imaging system is effective for detecting and identifying concealed objects such as metal or plastic.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1663-1670
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• 2006

Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.