• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.39-44
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• 2001

솔-젤법으로 S $r_{0.9}$B $i_{2.1}$T $a_2$$O_{9}$ stock solution을 합성하고, Ir $O_2$/ $SiO_2$/Si 및 기판 위에 스핀코팅법으로 약 2000$\AA$ 정도의 두께를 가지고 SBT 박막을 제조하였다. Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막과 비교하였을 때 Ir $O_2$전극을 사용한 SBT 박막의 경우 더 낮은 급속 열처리 온도 즉, 72$0^{\circ}C$에서 형석상에서 층상 페롭스카이트 상으로의 상전이가 관찰되었다. 그리고, Ir $O_2$전극을 사용한 SBT 박막은 낮은 열처리에서 결정성장이 이루어졌다. Ir $O_2$전극을 사용한 SBT 박막은 $650^{\circ}C$에서 열처리하였을 때 포화된 이력곡선을 얻었지만, Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막은 $700^{\circ}C$에서 열처리하였을 때 이력곡선이 관찰되었다. Ir $O_2$전극을 사용한 SBT 박막은 $700^{\circ}C$의 열처리에서 8.79 $\mu$C/$ extrm{cm}^2$ (3V)의 2Pr 값을 나타내었다.나타내었다.다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.123-123
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• 2012

초소수성 표면은 150도 이상의 높은 물 접촉각과 10도 이하의 낮은 sliding angle을 가지며 self-cleaning, anti-contamination 기능을 갖고 있는 것이 특징이다. 재료표면의 친수성과 소수성을 제어하기 위해서는 화학적 인자인 물질의 표면에너지나 물리적 인자인 표면 거칠기를 조절하는 방법이 있다. 초소수성 표면을 구현하기 위해서는 표면의 거칠기를 증가시키거나 표면 에너지를 낮춰야 하는데 고체 표면의 거칠기를 증가시키기 위해서는 일반적으로 표면에 microscale과 nanoscale의 계층구조를 형성시키는 방법이 사용된다. 자연계에 매우 풍부하게 존재하는 실리카는 내구성과 내마모성, 화학적 안정성, 고온 안정성 등을 지니고 있으며 인체에 무해하기 때문에 다양한 종류의 전자기기 및 부품의 내외장 코팅에 적용이 검토되고 있다. 이러한 관점에서 본 연구에서는 초소수성 코팅층을 구현하는 하나의 방법으로서 졸-겔방법으로 실리카 졸을 합성하여 전기분무법을 사용하여 microscale의 실리카 입자 코팅층을 형성하였으며, 표면 미세구조 조절 및 계층구조 형성과 불소화처리 공정을 통하여 초소수성 실리카 코팅층을 제조하였다. 이러한 초소수성 실리카 코팅층의 표면거칠기, 자외선 영향향, 내구성 등을 초소수성 관점에서 평가하였다.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.804-809
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• 1999

Silica films were prepared on Si single crystal substrates by a sol-gel process without DMF using TEOS as a starting material. Films were fabricated by spin coating technique. For films having a composition of TEOS : HCI(1:0.05mol), gelation time, the thickness of films, the formation of cracks and the microstructure of the films were investigated as a function of the molar ratio of $CH_3OH and H_2O$. With 8mol $CH_3OH$, the longest gelation time was measured to be 640hr. The thickness of the coated films was decreased with increasing content of $CH_3OH$. The films were sintered at $500^{\circ}C$ for 1hr with a heating rate of $0.6^{\circ}C$/min. The coated films showed worm-like grains and partially cracked microstructures at an amount of $CH_3OH$ 2mol and 4mol. The addition of more than 8 mole of $CH_2OH$ resulted in crack-free silica films. This suggests that crack-free films can be fabricated by controlling the surface tension energy of the sol solutions without DMF.

• Journal of Ocean Engineering and Technology
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• v.29 no.1
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• pp.94-99
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• 2015

Lead zirconate titanate (PZT) thick films with thicknesses of ㎛ were fabricated on silicon substrates using an aerosol deposition method. A PZT powder solution was prepared using a sol-gel process. The average diameters (d50) obtained were 1.67, 1.98, and 2.40μm when the pyrolysis temperatures were 300℃, 350℃, and 450℃ respectively. The as-deposited film had a uniform microstructure without any cracks or pores. The as-deposited films on silicon were annealed at a temperature of 700℃. The 20-㎛-thick PZT film showed good adherence between the PZT film and substrate, with no tearing observed in the conventional solid phase process. This was probably because the presence of pores produced from organic residue during annealing relieved the residual stresses in the deposited film.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.230-234
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• 2013

IR cut-off thin films consisted of ATO nanoparticles were successfully fabricated by sol-gel method. The coating solution was synthesized with organic/inorganic hybrid binder and ATO colloidal solution and ATO thin films were coated on a slide glass with the withdrawal speed of 5~40 mm/s. As the withdrawal speed increased from 5 mm/s to 40 mm/s, the thickness of coating thin films also increased from $1.05{\mu}m$ to $4.25{\mu}m$ and the IR cut-off in wavelength of 780~2500 nm increased from 49.5 % to 66.7 %. In addition, the pencil hardness of ATO thin films dried at $80^{\circ}C$ was ca. 5H and the coating films were not removed after a cross cutter tape test because of the hybrid binder synthesized with tetraethylorthosilicate and methyltrimethoxysilane. The surface morphologies, optical properties and film thickness of prepared thin films with a different withdrawal speed were measured by field emission scanning electron microscope (FE-SEM), UV-Vis spectrophotometer, and Dektak.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.425-431
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• 1999

$Pb(Zr_{0.52}, Ti_{0.48})O_3$ (PZT) thick films as an actuating material with conducting oxides, $(La_{0.5}Sr_{0.5}) CoO_3$ (LSCO), have been fabricated by sol-gel method for Optical Micro-Electro-Mechanical System (MEMS) devices, in which PZT/LSCO/SiO2 structures were used. In order to improve the adhesion to LSCO solution in order to enhance the wetting behavior of a water-based LSCO precursor solution and further to improve the adhesion between LSCO and $SiO_2$ layers. PZT films were made using 1-3 propanediol based precursor solution which has a high viscosity and a boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxied and Zr-propoxied are partially substituted with acetylacetone to achieve the solution stability while maintaining reactivity. Crack free PZT films (0.8~1$\mu\textrm{m}$) have been successfully fabricated at crystallization temperatures above $700^{\circ}C$. Dielectric constants and dielectric losses of the PZT films were 900~1200and 2~5%, respectively. Piezoelectric constant $d_{33}$ of the PZT films constrained by a substrate were 200pm/V at 100kV/cm.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.795-803
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• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• Journal of Korean Society of Environmental Engineers
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• v.37 no.6
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• pp.357-362
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• 2015

A novel $TiO_2$-Coconut Shell Powder Composite (TCSPS), prepared by the controlled sol-gel method with subsequent heat treatment, was evaluated as an innovative photocatalytic absorbent for the removal of methylene blue. Optimal preparation conditions of TCSPC were obtained by a response surface methodology and a central composite design model. As compared with the results obtained from one-factor-at-a-time experiments, the values were approximated to the nearest condition of these values and the following experimental parameters were set as the optimum : $600^{\circ}C$ calcination temperature and 20 g of coconut shell powder loading amount.

• Polymer(Korea)
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• v.27 no.3
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• pp.265-270
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• 2003

In spite of high ionic conductivity, the polymer gels have poor mechanical properties and high reactivity with lithium metal anode. To solve these problems, the dry solid systems and polymer composites have been intensively studied, due to their good mechanical, thermal, chemical, and electrochemical stability. The objectives of this experiment were to improve ionic conductivity and mechanical properties of the solid polymer electrolytes based on PEO-LiClO$_4$. To obtain higher ionic conductivity and better mechanical properties, ceramic or rubber phase was added in the PEO-LiClO$_4$(8:1) matrix. The results showed that ionic conductivity and mechanical properties were improved. The ionic conductivity of the samples was as high as 10$\^$-5/ S cm$\^$-1/. This value is similar to the best ionic conductivity ever reported in the solid drying system. To obtain better results, we used PEO with various molecular weights (600∼8000) and changed the salt contents. By using DSC, we found that the addition of salt reduced the crystallinity of PEO. The mobility of polymer dependence on salt contents was examined by FT-IR.