• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.13-18
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• 1997

The effects of the various raw material composition and sintered temperature on the physical properties of Ni-Zn ferrite have been investigated. They turned out to be spinel structure by X-ray diffraction and the size of grain from microscope was from 6 ${\mu}{\textrm}{m}$ to 16 ${\mu}{\textrm}{m}$. As the sintering temperature was increased from 1030 $^{\circ}C$ to 1070 $^{\circ}C$, the initial permeability and magnetic induction has increased and the both of Q factor and coercive force has decreased. The coercive force and curie temperature were almost the same at each specimen. Their values were about 0.20 Oe and 220 $^{\circ}C$. The frequency of specimen will used in the range from 400 kHz to 20 MHz. The basic composition of $Ni_{0.14}Zn_{0.64}Cu_{0.22}Fe_2O_4$ (specimen B) sintered at 1050 $^{\circ}C$ shows the best results at magnetic induction($B_r & B_m$).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.5
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• pp.218-227
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• 2021

A thick film NTC thermistor for low temperature co-firing was manufactured by printing and sintering a paste prepared using NTC powder of Mn_1.5Ni_0.4Co_0.9Cu_0.4O₄ composition, lead free frit, and RuO₂ on a 96 % alumina substrate. The effect of frit and RuO₂ on the electrical properties of thick film NTC thermistor was studied. The resistance of the thick film NTC thermistor was higher than that of the bulk phase sintered at the same temperature, but it was found that the negative resistance temperature characteristic appeared more clearly and linearly in the resistance - temperature characteristic. On the other hand, the area resistance decreased as the sintering temperature increased, and the area resistance increased as the amount of frit added increased. The B constant of the thick film NTC thermistor was 3000 K or higher. Among them, it was found that the B constant of the thick film NTC thermistor made of paste with 5 wt% of frit added and sintered at 900℃ showed the highest B constant. Also, it can be seen that the area resistance decreased with the addition of RuO₂, and the change in the area resistance decrease of the thick film NTC thermistor obtained by sintering the paste containing 5 wt% of RuO₂ at 900℃ is the most obvious.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.175-182
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• 2022

Rare-earth elements were doped with Mg to enhance the temperature stability of dielectric properties of BaTiO₃ for its application to MLCC (Multi-Layer Ceramic Capacitor). The additives strongly affect both grain growth and densification behaviors during sintering, and hence dielectric properties. The additive effects therefore should be examined in each system with different additives. This study investigated the crystal structure, grain growth and densification behaviors and related variations in dielectric constant with respect to sintering temperature. Dielectric constant appears to be varied with grain size in a temperature range between 1200 and 1300℃, suggesting the importance of grain size control. The temperature dependence of grain size variation was well explained by an established theory correlating the grain growth behavior with grain boundary structure. This accordance provides a basis for sintering technique to control grain growth thus to improve dielectric constant in rare-earth doped BaTiO₃.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.151-156
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• 1995

Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.285-292
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• 1996

The effect of AlN on the thermal conductivity of aluminum oxide pressurelessly sintered at nitrogen atmos-phere was investigated. Increasing aluminium nitride content up to 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singnificantly decreased and was constant with adding 20 and 25 mol% aluminium nitride. The thermal conuctivity of $Al_{2}O_{3}$ containing 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singificantly decreased and was constant with adding 20 and 25mol% aluminum nitride. The thermal conctivity of $Al_{2}O_{3}$ containing 1~10 mol% AlN showed a maximum at $1700^{\circ}C$ and decrea-sed with increasing sintering tempertures. This phenomenon was attributed to $\alpha$-$Al_{2}O_{3}$ and ALON formed by reacting $Al_{2}O_{3}$ with AlN up to $1700^{\circ}C$ and the secondary phases such as ${\gamma}$-ALON ($9Al_{2}O_{3}$.AlN)and $\Phi$($5Al_{2}O_{3}$.AlN) phase above $1750^{\circ}C$ The thermal conductivity of $Al_{2}O_{3}$ containing 20 and 25 mol% AlN showed maximum value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ while only AlON phase existed above $1650^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.26.2-26.2
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• 2010

최근에는 차세대 조명용 후보광원인 고출력 백색 LED를 개발하기 위한 경쟁이 치열하며, 이를 위해 업체가 고심하고 있는 가장 큰 문제 중의 하나가 칩에서 발생하는 열을 어떻게 관리하는가 하는 방열의 문제이다. 따라서, LED의 가장 큰 특징인 장수명을 손해보지 않기 위해서는 칩에서 발생되고 있는 열을 외부에 확산시키기 위한 기술 개발이 필수적이다. 다양한 방열소재 중 W-Cu 복합재는 W의 낮은 열팽창계수와 Cu의 높은 열전도도로 인해 방열소재로써 유망한 소재로 주목받고 있으나, 우수한 열적 특성을 발현하기 위해서는 고치밀화를 갖는 W-Cu 복합재 제조가 우선적으로 필요하다. W-Cu 복합체는 일반적으로 액상소결법을 통해 균일한 미세조직을 얻을 수 있으나, 열팽창계수를 낮추기 위해 Cu 함량이 적어지게 되면 치밀화가 어려우며 이를 해결하기 위해 나노입자를 갖는 분말을 이용하고자 하는 연구가 많이 진행되고 있다. 본 연구에서는 W과 Cu 산화물을 이용하는 것이 구성성분끼리의 편석이 발생하지 않으며, 소결성도 우수하여 양산화에 가장 접근한 방법으로 알려져 있다. 그러나, 지금까지의 얻어진 W-Cu 복합체의 경우, 분말상태에서의 얻어진 나노입자가 승온시에 마이크로 크기로 과도한 입자성장이 일어나기 때문에 소결 후에도 나노크기를 유지하기 어려울 뿐만 아니라, 구성상끼리의 응집체가 형성된다. 본 연구에서는 액상소결후에 W 입자가 Cu 기지내에 균일하게 분산되는 동시에 나노크기의 입자를 가지는 고분산 W-Cu 소결체를 얻고자 하였다. 이를 위해 금속산화물 분말의 분쇄를 위해 효과적인 방법으로 알려진 습식상태에서의 고에너지 볼밀링을 통하여 혼합된 텅스텐과 구리 산화물 분말의 수소환원공정을 통해 얻어진 100nm 이하의 입자를 가지는 W-20wt%Cu 나노복합분말을 출발분말로 사용하였다. W-20wt%Cu 나노복합분말의 성형체를 $1050^{\circ}C-1250^{\circ}C$의 온도범위에서 소결거동을 조사하였다. 그 결과, $1100^{\circ}C$ 온도에서 이론밀도에 가까운 소결밀도를 나타내었으며, 이는 기존에 비해 $100^{\circ}C$ 정도 치밀화 온도를 낮추는 결과이다. 소결체의 미세구조 관찰결과, 소결 후 약 200nm의 텅스텐 입자가 Cu내에 균일하게 분산되어 있었다. 제조된 W-Cu 시편에 대해서는 LED 응용성을 조사하기 위해 열전도도와 열팽창계수 등을 평가하였다.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.659-664
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• 1998

Densification behavior of $Si_3N_4$ ceramics by two step gas pressure sintering was compared with pres-sureless sintering one step gas pressure sintering or hot isostatic pressing. While it was difficult to get the highly interlocked ${\beta}-Si_3N_4$ microstructure during the pressureless sintering due to decomposition above $1800^{\circ}C$ gas pressure sintering could solve this problem by increasing the densification temperature 2MPa of nitrogen pressure was enough to inhibit the decomposition up to $1890^{\circ}C$ and especially two step gas pres-sure sintering applying comparatively low pressure(2MPa) until the closed pore stage and then high pres-sure(10MPa) after pore closure could increase the hardness and the toughness.

• Korean Journal of Materials Research
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• v.7 no.4
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• pp.354-360
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• 1997

페르브스카이트 구조를 갖는 CaTiO$_{3}$-La(Zn$_{1}$2/Ti$_{1}$2)O$_{3}$계에서 소결 온도와 소결 시간의 증가에 따른 ZnO의 휘발과 이에 따른 고주파 유전 특성에 대하여 조사하였다. 시편 내부를 WDS 분석한 결과 위치에 따른 ZnO의 농도차를 관찰할 수 있었고, 시편의 두께를 달리하여 Qxf$_{o}$ 값을 조사한 결과 ZnO가 많이 휘발된 가장자리에서 더 높은 Qxf$_{o}$ 값을 얻을 수 있었다. 0.535CaTiO$_{3}$-0. 465La(Zn$_{1}$2/Ti$_{1}$2/)O$_{3}$몰비로 155$0^{\circ}C$, 2시간동안 합성한 결과 소결 밀도 5.31g/㎤, 유전율 50, Qxf$_{0}$34,000, 온도계수 +8ppm/$^{\circ}C$의 고주파 유전 특성을 갖는 소결체를 얻을 수 있었다.

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.122-128
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• 1993

본 연구에서는 0.45Pb(Fe$_{1}$2/Nb$_{1}$2/)O$_{3}$- (0.55-xPb(Fe$_{2}$3/W$_{1}$3/)O$_{3}$ (x=0.20, 0.25, 0.30) 세라믹을 950~990[.deg.C]에서 2시간 유지시켜 일반소성법으로 제작하였다. 제작된 시편에 대해 적층 세라믹 캐패시터로의 응용가능성을 고찰하기 위해 조성비와 소결온도에 따른 구조적, 유전적 특성을 조사하였다. PMN의 첨가량이 증가할수록 결정립 크기는 감소하였으며 상전이 온도는 증가하였다. 소결밀도는 970[.deg.C]에서 소결된 0.45PFN-0.30PFW-0.25PMN 시편에서 7.86[g/cm$_{3}$]의 최대값을 나타내었다. 유전상수는 990[.deg.C]에서 소결된 0.45PFN-0.25PFW-0.30PMN 시편에서 20,751의 최대값을 나타내었으며 유전손실은 모든 조성에서 5[%]이상을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.228-229
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• 2006

본 연구에서는 초음파 모터 등의 고출력 액츄에이터에 응용 가능한 $04Pb(Ni_{1/3}Nb_{2/3})O_3-6Pb(Zr_xTi_{1-x})O_3$ 조성시스템에 소결온도를 달리하여 압전, 유전특성 및 미세구조에 관해 고찰하였다. 본 조성을 $1200^{\circ}C$ 온도에서 2, 4, 6, 8시간 소결하여 시편을 제조하였으며 이의 결정구조 및 미세조직을 분석하였다. 소결시간 증가에 따라 전기기계결합계수와 기계적품질계수는 증가하였으며, 압전상수는 Zr(Zr+Ti)비 0.390까지 증가하였으나 그 이상 증가함에 따라 감소하였다. 압전특성은 $1200^{\circ}C$에서 4시간 소결한 Zr=0.390인 조성에서 ${\varepsilon}_r$ = 4487, $k_p$ = 0.72. $d_{33}$ = 710, $Q_m$ =109의 우수한 특성을 나타내었다.