Effects of $UV/O_3$ and SC-1 Step in the HF Last Silicon Wafer Cleaning on the Properties of Gate Oxide
(HF-last Cleaning에서 SC-1 step과 $UV/O_3$ step이 gate 산화막에 미치는 영향)
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- Korean Journal of Materials Research
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- v.6 no.4
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- pp.395-400
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- 1996