• Title/Summary/Keyword: 성장 속도

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Dependence of defects on growth rate in (100) ZnSe cryseal ((100) ZnSe 결정에서 결함의 성장 속도에 대한 의존성)

  • 박성수;이성국;김준홍;한재용;이상학
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.2
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    • pp.263-268
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    • 1998
  • (100) ZnSe crystals with twin and grain free were grown by vapor transport method. The defect in (100) ZnSe crystals was investigated by FWHM of X-ray Rocking Curve. The growth rate and seed quality are the main parameters of the growth process to obtain the high quality ZnSe crystals. The geometric shape of the grown (100) ZnSe crystal is dependent on the shape of seed, isothermal line in furnace and the growth rate of each surface in crystal.

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The Growth of $CaF_2$ Single Crystal by Tammann Method (탐만법에 의한 $CaF_2$ 단결정 육성)

  • 장영남;채수천;문희수
    • Korean Journal of Crystallography
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    • v.10 no.1
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    • pp.20-27
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    • 1999
  • CaF2 단결정을 흑연도가니를 사용하여 He 분위기 하에서 탄만법으로 성장시켰다. 수화방지를 위해 PbF2를 출발물질에 도포하였다. 열구배에 따른 계면의 움직임인 성장속도는 배플판에 의해 성공적으로 조절되었다. 결정성장의 최적조건은 온도구배가 37℃/cm, 냉각속도가 10℃/hr 및 2.5tw% PbF2를 사용한 경우로, 성장속도는 약 3.2 mm/hr이었으며, 위로 볼록한 고액계면을 갖는 단결정이 성장되었다. IR분석 결과, 1500∼4000 cm-1(6.7∼2.5 ㎛)영역에서 약 96%의 투과도를 보였다. 결함밀도를 측정하기 위해, 성장축에 수직 및 수평으로 절단한 면을 농축 H2SO4에서 약 30분간 에칭하여 간섭현미경으로 관찰한 결과, 각각 3.4×104/cm2였다. 이러한 결과는 수화에 따른 성장된 단결정의 투명도의 경향과 일치하였다. 결정에 대한 XRD분석 결과 우선성장 방향은 <311>이었다.

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Dynamic Fracture Behaviors of Concrete Three-Point Bend Specimens (콘크리트 삼점휨 시험편의 동적 파괴거동)

  • 연정흠
    • Journal of the Korea Concrete Institute
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    • v.14 no.5
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    • pp.689-697
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    • 2002
  • The dynamic loads and load-point displacements of concrete three-point bend (TPB) specimens had been measured. The average crack velocities measured with strain gages were 0.16 ㎜/sec ∼ 66 m/sec. The fracture energy for crack extension was determined from the difference of the kinetic energy for the load-point velocity and the strain energy without permanent deformation from the measure external work. For all crack velocities, there were micro-cracking for 23 ㎜ crack extension, stable cracking for 61 ㎜ crack extension at the maximum strain energy, and then unstable cracking. The unstable crack extension was arrested at 80 ㎜ crack extension except the tests of 66 m/sec crack velocity. The tests less than 13 ㎜/sec crack velocity and faster than 1.9 m/sec showed static and dynamic fracture behaviors, respectively. In spite of much difference of the load and load-point displacement relations for the crack velocities, the crack velocities of dynamic tests did not affect on fracture energy rate during the stable crack extension due to the reciprocal action of kinetic force, crack extension and strain energy. During stable crack extension, the maximum fracture resistances of the dynamic tests was 147% larger than that of the static tests.

Study on the Growth Characteristics of Think GaN on Sapphire Substrate Using Hydride Vapor phase Epitaxy (Hydride Vapor Phase Epitaxy를 이용한 Sapphire기판 상에 GaN후막의 성장특성에 관한 연구)

  • Lee, Jeong-Uk;Yu, Ji-Beom;Byeon, Dong-Jin;Geum, Dong-Hwa
    • Korean Journal of Materials Research
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    • v.7 no.6
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    • pp.492-497
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    • 1997
  • HVPE를 이용하여 sapphire기판 위에서 후막 GaN의 성장특성을 조사하였다. 성장온도가 100$0^{\circ}C$에서 110$0^{\circ}C$로 증가하여도 성장속도는 영향을 받지않고 50-60$\mu\textrm{m}$/hr의 성장속도를 나타내었으나 표면특성과 결정성은 향상되었다. 110$0^{\circ}C$에서 성장된 후막 GaN는 DCXRD측정결과 451arcsec의 반티폭을 나타내었으며, PL측정결과 10K에서 19meV의 반치폭을 나타내었다. Ga 공급원의 온도가 93$0^{\circ}C$에서 77$0^{\circ}C$로 감소하여도 성장속도는 영향을 받지 않았으나, 77$0^{\circ}C$의 온도에서 GaN의 결정성이 향상되었다. HCI의 양이 5sccm에서 20sccm으로 증가함에 따라 성장속도가 15$\mu\textrm{m}$/hr에서 60$\mu\textrm{m}$/hr으로 증가하였으며, 표면특성도 향상되었다.

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Growth and Etching of Epitaxial Layer and Polysilicon for the Selective Epitaxy (선택적 에피택시를 위한 에피택셜층 및 폴리실리콘의 성장과 에칭)

  • 조경익;김창수
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.1
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    • pp.34-40
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    • 1985
  • An investigation has been made on the growth phenomena of epitaxial layer and polysilicon from SiH2 Cl2 in H2 and the etch phenomena of them from HCI in H2, at the system pressures of 1.0 atm (atmospheric process) and 0.1 attn (reduced pressure process). From the experimental equations for the growth rates and etch rates. the relevant process conditions for the selective epitaxy are predicted for the case of using mixtures of SiH2Cl2 and HCI in H2. As a result, it is found that selective epitaxial growth region exists in the concentration range investigated for the reduced pressure process but it does not for the atmospheric Process. This is due to the differences in the growth rates and etch rates at atmospheric and reduced pressure.

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Resistance Curves of Concrete CLWL-DCB Specimens (콘크리트 CLWL-DCB 시험편의 저항곡선)

  • 연정흠
    • Journal of the Korea Concrete Institute
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    • v.14 no.3
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    • pp.357-364
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    • 2002
  • The resistance curves (R-curves) for 381 m crack extension of CLWL-DCB specimens had been determined. The average velocities of the crack extension measured with strain gages were 0.70 and 55 ㎜/sec. The measured rotation angle of the notch faces showed the existence of the singularity at least before 171 and 93 mm crack extensions for the 0.70 and 55 ㎜/sec crack velocities, respectively. The maximum slopes of the R-curves occurred between 25 and 89 ㎜ crack extensions for 0.70 ㎜/sec crack velocity and between 51 and 127 ㎜ crack extensions for 55 ㎜/sec crack velocity During the maximum slopes of the R-curves, the micro-crack localization can be expected, and faster crack velocity may form longer micro-cracking and micro-crack localizing zones. The fracture resistance of 0.70 ㎜/sec crack velocity reached a roughly constant maximum value of 143 N/m at 152 ㎜ crack extension, while that of 55 ㎜/sec crack velocity increased continuously to 245 N/m at 254 ㎜ crack extension and then decreased to the value of 0.70 ㎜/sec crack velocity. The R-curve of 55 ㎜/sec crack velocity was similar to that of the small size three-point bend test, and it showed that small size specimen or fast crack velocity could cause more brittle behavior.

The Study of Crystal Growth for Carbon Dioxide Hydrate ($CO_2$ 하이드레이트 결정 성장 연구)

  • Kim, Soo-Min;Lee, Hyun-Ju;Lee, Yoon-Seok;Lee, Eun-Kyoung;Kim, Yang-Do
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.709-709
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    • 2009
  • 지구 온난화의 주요한 원인인 $CO_2$ 가스 저감을 위한 많은 연구가 현재 수행중이며, 하이드레이트 형성원리를 이용한 $CO_2$ 분리 및 회수에 대한 연구가 보고되고 있다. 하이드레이트 형성에 있어 결정성장 거동에 관한 연구는 $CO_2$ 하이드레이트 형성 메커니즘을 규명하는데 기초자료를 제공할 것으로 사료된다. 본 연구에서는 274.1K의 정온 조건에 서 반회분식 교반 반응기를 이용하여 1.7MPa에서 3.0MPa으로 압력 조건을 바꾸면서 $CO_2$ 하이드레이트를 형성시켰다. 실험에 공급된 기체의 조성은 $CO_2$ (99.999%)이다. 실험 관측은 광학현미경(Nikon, SMZ 1000)에 장착된 CCD카메라(Nikon DS-5M/Fi1/2M-U2)에 의하여 이루어 졌다. 하이드레이트 형성 및 해리 과정을 CCD카메라로 촬영하고 시간에 따른 온도와 압력의 변화를 기록하여 핵생성 시간, 성장 속도, 성장 거동을 관찰하였다. 실험에 적용되는 압력에 따라서 하이드레이트 성장형태와 성장속도에서 매우 큰 차이를 보이는 것을 확인하였다.

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Correlation Between Transient Regime and Steady-State Regime on Creep Crack Growth Behavior of Grade 91 Steel (Grade 91 강의 크리프 균열성장 거동에 대한 천이영역과 정상상태영역의 상관 관계)

  • Park, Jae-Young;Kim, Woo-Gon;Ekaputra, I.M.W.;Kim, Seon-Jin;Kim, Eung-Seon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.39 no.12
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    • pp.1257-1263
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    • 2015
  • A correlation between the transient regime and steady state regime on the creep crack growth (CCG) for Grade 91 steel, which is used as the structural material for the Gen-IV reactor systems, was investigated. A series of CCG tests were performed using 1/2" CT specimens under a constant applied load and at a constant temperature of $600^{\circ}C$. The CCG rates for the transient and steady state regimes were obtained in terms of $C^*$ parameter. The transient CCG rate had a close correlation with the steady-state CCG rate, as the slope of the transient CCG data was very similar to that of the steady state data. The transient rate was slower by 5.6 times as compared to the steady state rate. It can be inferred that the steady state CCG rate, which is required for long-time tests, can be predicted from the transient CCG rate obtained from short-time tests.

Optical(Interferometric) Measurements of Vapor Deposition Growth Rate and Dew Points in Combustion Gases (빛의 간섭현상을 이용한 증기용착 성장속도 측정법의 실험적 연구)

  • 김상수;송영훈
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.10 no.3
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    • pp.343-348
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    • 1986
  • An optical interference method was developed for measuring rapidly growing and evaporating liquid condensate films (e.g., Na$_{2}$SO$_{4}$, $K_{2}$SO$_{4}$) on solid surface exposed to flowing combustion product gases at film thicknesses well below the onset of complications due to run-off. To develop this optical system, this study investigated the optical parameters (e.g., polarization state, incident angle, target roughness, etc.) Trends for the Na$_{2}$SO$_{4}$(l) and $K_{2}$SO$_{4}$(l) deposition rates as a function of target temperature using this optical measuring system agree with the theoretical prediction of the vapor deposition. This study was able to extend the experimental range for vapor plus condensed phase transport and deposition. While previously unable to measure the evaporation rates interferometrically, these rates are estimated from the results of the investigation of polarization states.

Endocrine Function and Growth in Children with Craniopharyngioma (소아 두개인두종 환자에서 치료 전후의 뇌하수체 기능과 성장 및 체중 변화)

  • Chung, Yoo Mi;Shin, Choong Ho;Yang, Sei Won
    • Clinical and Experimental Pediatrics
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    • v.46 no.3
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    • pp.277-283
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    • 2003
  • Purpose : Craniopharyngiomas are often accompanied by severe endocrine disorders. Although there is universal growth hormone deficiency(GHD), the resulting growth pattern is very heterogeneous. We report the growth and endocrine outcome of 44 children with craniopharyngioma, with emphasis on initial symptoms, growth before and during growth hormone(GH) treatment and spontaneous growth in spite of GHD. Methods : We performed a retrospective study of 44 children treated at our centre between 1984 and 2002. Results : About 30% of patients had symptoms suggesting endocrine disorder at diagnosis. After surgery, multiple endocrinopathies were almost universal. Before GH therapy, height velocity was $8.00{\pm}2.71cm/yr$ in the normal growth group(n=11) and $1.79{\pm}1.10cm/yr$ in the subnormal growth group(n=7) during the first year and during the second year, $6.76{\pm}2.49cm/yr$ and $2.29{\pm}1.33cm/yr$, respectively. There was no difference of body mass index(BMI) change between before and after surgery in the two groups. Height standard deviation score(SDS) was $-1.46{\pm}0.74$ in the normal growth group and $-0.43{\pm}0.97$ in the subnormal growth group. Before GH treatment height SDS was $-1.31{\pm}1.25$ and BMI was $20.46{\pm}3.60$. During GH treatment, height SDS increased to $-0.60{\pm}1.37$ in the first, and to $-0.41{\pm}1.54$ in the second year(P<0.05), but BMI did not change significantly. Conclusion : The endocrine morbidity could develop in most children with craniopharyngioma before and after the operation and should be managed properly. Although all treated patients benefit from GH therapy, further studies are necessary to find out the possible mechanism of growth regulation in normally growing children, despite GH deficient.