• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.448-453
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• 2019

This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and $Sb_2Te_3$ films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a $Ge_2Sb_2Te_5$ intermediate layer was formed near the $Ge/Sb_2Te_3$ interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the $Ge_2Sb_2Te_5$ intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device.

• Journal of the KSME
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• v.35 no.9
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• pp.776-793
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• 1995

인간이 쾌적한 환경을 요구하는 수준과 함께 개발 및 개선되어 온 공조용 finned tube 열교환 기에 대한 연구는 앞으로도 환경과 소형화 및 정숙 운전의 요구에 부응하기 위하여 지속적인 연구 및 개선이 요구될 것이다. 또한, 생산기술이 발달함에 따라 이에 적합한 새로운 형태의 경 제적이고 효율적인 열교환기의 설계가 필요할 것이다. 특히 앞으로 중요성이 더욱 강조될 환경 오염, 재료의 재활용 등의 측면은 현재 우리가 개척해야 할 분야일 것이다. 한편으로는 국내의 짧은 열교환기 개발의 역사에 의하여 지금까지 사용되어 온 외국의 기술 및 특허 등의 무　제에 대하여 국내 고유의 기술을 보유할 수 있도록 더욱 노력을 하여야 할 것이다. 나아가 실제 열 교환기에서의 확장표면의 효과, 냉동유의 영향 그리고 혼합냉매의 열전달 특성 등을 고려할 수 있는 상관식을 개발함으로써 국내의 열교환기 설계기술이 외국에 비하여 우위를 점할 수 있도록 하는 노력이 계속되어야 할 것이다. 그리고 미래까지 이러한 기술적 우위를 지속하기 위해서는 혼합냉매의 상변화 열전달현상의 기본 메카니즘을 밝히는 등의 열교환기에서의 열유동특성에 대한 기초적인 연구와 새로운 형태의 열교환기 개발 및 전기장을 이용한 열전달 촉진 등의 신 기술을 이용한 열전달 연구 등에 대한 투자와 관심이 지속되어야 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.52-52
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• 2009

To date, chalcogenide alloy such as $Ge_2Sb_2Te_5$(GST) have not only been rigorously studied for use in Phase Change Random Access Memory(PRAM) applications, but also temperature gap to make different states is not enough to apply to device between amorphous and crystalline state. In this study, we have investigated a new system of phase change media based on the In-Sb-Te(IST) ternary alloys for PRAM. IST chalcogenide thin films were prepared in trench structure (aspect ratio 5:1 of length=500nm, width=100nm) using Tri methyl Indium $(In(CH_3)_4$), $Sb(iPr)_3$ $(Sb(C_3H_7)_3)$ and $Te(iPr)_2(Te(C_3H_7)_2)$ precursors. MOCVD process is very powerful system to deposit in ultra integrated device like 100nm scaled trench structure. And IST materials for PRAM can be grown at low deposition temperature below $200^{\circ}C$ in comparison with GST materials. Although Melting temperature of 1ST materials was $\sim 630^{\circ}C$ like GST, Crystalline temperature of them was ~$290^{\circ}C$; one of GST were $130^{\circ}C$. In-Sb-Te materials will be good candidate materials for PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.203-206
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• 2004

For the realization of PRAM, $Ge_2Sb_2Te_5$ (GST) has been employed for the phase transition between the crystal and amorphous states by electrical joule heating. Although there has been a vast amount of results concerning the GST in material aspect for the laser-induced optical storage disc applications, the process-related issues of GST for the PRAM applications have not been reported. In this work, the etching behaviors of GST were investigated when the processing conditions were varied in the high-density helicon plasma. The etching parameters of RF main power, RF bias power, and chamber pressure were fixed at 600 W, 150 W, and 5 mTorr, respectively. For the etching processes, gas mixtures of $Ar/Cl_2$, $Ar/CF_4$, and $Ar/CHF_3$ were employed, in which the etching rates and etching selectivities of GST thin film in given gas mixtures were evaluated. From obtained results, it is found that we can arbitrarily design the etching process according to given cell structures and material combinations for PRAM cell fabrications.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.470-474
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• 2012

This paper deals with the thermal performances of PCM/diatomite composites for energy saving. The PCM/diatomite composites were prepared by incorporating PCMs in the pores of diatomite to increase form stability of PCMs. In experiment, we used the hexadecane, octadecane and paraffin as PCM and they have each 254.7 J/g, 247.6 J/g and 144.6 J/g of latent heat capacity, and those melting points are $20.84^{\circ}C$, $30.40^{\circ}C$ and $57.09^{\circ}C$, respectively. Thermal properties of PCM/diatomite composites were determined by using DSC. And PCM/diatomite composites were characterized by SEM and FTIR analysis. The results showed that the PCMs are well infiltrated into the structure of diatomite andt he latent heat capacity of PCM/diatomite composites was obtained by 40% of pure PCMs.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1068-1073
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• 2001

An n-type iron$silicide(Fe_{0.98}Co_{0.02}Si_2)$has been produced by mechanical alloying process and consolidated by vacuum hot pressing. Although as-milled powders after 120 hours of milling did not show an alloying progress,${\beta}-FeSi_2$phase transformation was induced by isothermal annealing at$830{\circ}C$for 1 hour, and the fully transformed${\beta}-FeSi_2$phase was obtained after 4 hours of annealing. Near fully dense specimen was obtained after vacuum hot pressing at$ 1100{\circ}C$with a stress of 60MPa. However, as-consolidated iron silicides were consisted of untransformed mixture of ${\Alpha}-Fe_2Si_5$and ${\varepsilon-FeSi$phases. Thus, isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting${\beta}-FeSi_2$phase. The condition for${\beta}-FeSi_2$transformation was investigated by utilizing DTA, SEM, and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at$830{\circ}C$and the transformation behaviour was investigated as a function of annealing time. The mechanical properties of${\beta}-FeSi_2$materials before and after isothermal annealing were characterized in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.918-922
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• 2006

Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.292-296
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• 2003

In an attempt to enhance phase transformation and homogenization of Mn-doped $FeSi_2$, mechanical alloying of elemental powders was applied. Cold pressing and sintering in vacuum were carried out to produce a dense microstructure, and then isothermal annealing was employed to induce a phase transformation to the $\beta$-$FeSi_2$semiconductor. Phase transitions in this alloy system during the process were investigated by using XRD, EDS and SEM. As-milled powders after 100 h of milling were shown to be metastable state. As-sintered iron silicides consisted of untransformed mixture of $\alpha$-$Fe_2$$Si_{5}$and $\varepsilon$-FeSi phases. $\beta$-$FeSi_2$phase transformation was induced by subsequent isothermal annealing at $830^{\circ}C$, and near single phase of $\beta$-$FeSi_2$was obtained after 24 h of annealing. Thermoelectric properties in terms of Seebeck coefficient, and electrical conductivity were evaluated and correlated with phase transformation. Seebeck coefficient electrical resistivity and hardness increased with increasing annealing time due to $\beta$ phase transformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.215-215
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• 2010

The feasibility of InSbTe (IST) chalcogenide materials prepared by metalorganic chemical vapor deposition (MOCVD) for phase-change memory (PRAM) applications was demonstrated. Films grown below $225^{\circ}C$ exhibited an amorphous structure, and the films grown at $300^{\circ}C$ Cincluded various crystalline phases such as In-Sb-Te, In-Sb, In-Te, and Sb-Te. The composition of the amorphous films grown at $225^{\circ}C$ was dependent on the working pressure. Films grown at $225^{\circ}C$ exhibited a smooth morphology with a root mean square(rms) roughness of less than 1nm, and the step-coverage of the films grown on a trench structure with an aspect ratio of 5:1 was greater than 90%. An increase in deposition time increased the filling rate, while retaining the conformal step-coverage. Films grown at $225^{\circ}C$ for 3h in a working pressure of $13{\times}10^2$ Pa exhibited a reproducible and complete filling in a trench structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.328-328
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• 2010

압전 세라믹스는 엑츄에이터 및 센서 등의 다양한 응용분야로 인하여 많은 연구가 진행되어왔다. 최근 친환경 무연 압전계인 Bi층상구조 (BNT) 및 알칼리 니오븀산화물계 (KNN)에 대한 연구가 집중되고 있다. 한편, 소형화 및 고성능의 압전소자에 대한 요구 증가로 고가의 내부전극인 Ag, Ag-Pd합금으로 이루어진 적층압전소자에 대한 연구개발이 진행되어 왔다. 본 연구에서는 Ni이나 Cu를 내부전극으로 사용하는 적층압전소자의 개발가능성을 타진하고자 Ni의 산화를 억제할 수 있는 환원분위기 소결시에 압전소재의 상변화 및 내환원성 정도를 조사하였다. 압전소재인 BNT 및 KNN를 공기중에서 합성한 후, 환원분위기의 영향을 조사하고자 샘플을 디스크 형태로 성형하여 $1000{\sim}1200^{\circ}C$에서 2 시간 동안 공기, 중성 (N2) 와 환원 분위기 (3 % H2 - 97 %의 N2) 에서 소결한 후 미세구조와 전기적 특성을 SEM, EDS, XRD, impedance analyzer로 조사였다. 환원분위기에서 소결된 BNT 샘플은 페롭스카이트 상이 관찰되지 않았으며, SEM/EDS 분석결과 시편의 표면에 Bi의 석출이 관찰되었다. KNN의 경우에는 공기중에서 소결 시편뿐만 아니라 환원분위기에서 소결된 시편에서도 페롭스카이트 구조를 보였으며, EDS분석결과 K 및 Na의 휘발이 비교적 적었다.