• Journal of Powder Materials
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• 제9권2호
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• pp.89-95
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• 2002

Spherical fine powders of tungsten oxide powders were prepared by the emulsion evaporation method. The characteristics of the powders prepared were examined by means of TGA, X-ray diffraction, SEM and image analysis. The emulsions were prepared by fast mixing of aqueous phase containing tugsten and the organic phase which composed of kerosene, surfactant, and paraffin oil. Precursors were made by evaporating the emulsionin the kerosene bath at $160^{\circ}C$, and then calcined at $650^{\circ}C$ in order to produce tungsten oxide powders. The average particle size of the tungsten oxide powders was $0.5\mutextrm{m}$ and their shapes were spherical at the both case of w/o and o/w type emulsions. As the HLB value of the surfactant increased and the concentration of tungsten ions decreased the mean particle siqe of tungsten oxide powders decreased whereas agglomerationsize increased. The optimum concentration of Span 80 was 8 percent by volume, and the optimum stirring speed in the emulsion formation was 5000 rpm in order to obtain fine and well dispersed $WO_3$ powders.

• Journal of Hydrogen and New Energy
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• 제22권5호
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• pp.656-662
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• 2011

The purpose of this study was to correlate between photoelectrochemcial hydrogen production rate and electron transfer with various types of metal doped $TiO_2$ nanotubes as photoanodes. In order to fabricate light sensitized photoanode, CdS, $WO_3$, and Pt were doped by electrodeposition method. As the results of experiments, the electron transfer was favorable from higher position to lower position of conduction band (CB). In consequence, the higher hydrogen production rate was as follows, CdS/$TiO_2$ (100 $umol/hr-cm^2$) > $WO_3/TiO_2$ (20 $umol/hr-cm^2$) > Pt/$TiO_2$ (10 $umol/hr-cm^2$). The surface characterizations exhibited that crystal structure, morphological and electrical properties of various metal depoed $TiO_2$ nanotubes by the results of SEM, TEM, XPS, and photocurrent measurements.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.64-67
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• 2000

Tungsten silicide(WSi$_2$) is proposed for the alternate gate electrode of ULSI MOS devices. Good structural property and low resistivity of WSi$_2$ deposited by a low pressure chemical vapor deposition(LPCVD) method directly on SiO$_2$ is obtained after annealing. Especially, WSi$_2$-SiO2 interface remains flat after annealing tungsten silicide at high temperature. Electrical characteristics of annealed WSi$_2$-SiO$_2$-Si(MOS) capacitors were improved in view of charge trapping.

• Proceedings of the IEEK Conference
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.601-604
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• 1998

NOX detecting gas sensors using TiO2 doped tungsten oxide semiconductor were prepared and their electrical and sensing characteristics have been investigated. In normal air condition, the sensors of WO3, TiO2 doped WO3 show grain boundary heights of 0.34 eV, 0.25 eV, respectively. The grain boundary barrier energy variation was increased by doping TiO2 into large variation of resistance to NOX gases. And doping the TiO2 4 wt.%, the particle size of WO3 polycrystal films showed higher sensitivity and better sorption characteristics to NOX gas than the pure WO3 films material in air at operating temperature of $350^{\circ}C.$ The TiO2 doped WO3 semiconductor gas sensor shows nano-sized particle size and good sensitivity to sub-ppm concentration of NOX.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제33A권12호
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• pp.77-82
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• 1996

The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

• Proceedings of the KSME Conference
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1259-1264
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• 2008

This paper presents an accelerated life test for burn out of tungsten filament of automotive halogen lamp. There are many failure modes and failure factors that associated with tungsten filament. But in this explain the dominant failure mode of tungsten filament is the bumout of the filament failure. At first, over voltage, high temperature, inrush current and vibration are selected as stress factors by using of two stage Quality Function Deploymeng(QFD). And we planed accelerated life test that has one factor(voltage) and three levels. By experiment it has absorbed that over voltage has an effect on the life of halogen lamp. Using ALTA programs, we estimated the common shpae parament of Weibull distribution, life-stress relationship and $B_{100p}$ life.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.495-495
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• 2013

액체 내에 적용 가능한 바이오 플라즈마 소스를 제작하기 위해 텅스텐과 주사 바늘, 카테터 등의 여러 재료를 사용하여 시도를 해보았고 액체에서 방전이 일어날 수 있는 구조를 연구하였다. 전극 위에 절연체를 씌우고 그 위에 전극을 고정시켜 전압을 인가하여 전극 간에 표면방전을 통해서 플라즈마를 생성하는 방식을 사용하였다. 실험 장비는 AC 전압을 사용하였으며(12 kV, 22 kHz) 방전 전압과 방전 전류를 고전압 프로브(Tektronix P6015A)와 전류 프로브(P6021)를 사용하여 측정하였다. 모노크로미터를 이용하여 바이오 플라즈마 소스가 액체 속(수돗물, 증류수, 생리식염수)에서 방전 될 때 에미션 스펙트럼을 분석하여 산화질소(nitric oxide; NO), 과산화수소(hydrogen peroxide; H2O2), hydroxyl radical이 발생함을 확인하였다. 인체 내에서는 온도가 중요한 요소이기 때문에 액체에서 방전할 때 $40^{\circ}C$ 이하의 낮은 온도에서 이용이 가능하도록 연구하였다. 특히, 우리는 여러 종류의 액체(수돗물, 증류수, 생리식염수)에서의 방전 특성의 광학적 전기적 연구를 하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• 제34D권6호
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제17권2호
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• pp.156-161
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• 2004

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. In order to compare the removal rate and non-uniformity as a function of oxidizer contents, we used alumina-based tungsten slurry and copper blanket wafers deposited by DC sputtering method. According to the CMP removal rates and particle size distribution, and the microstructures of surface layer by SEM image as a function or oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2$O$_3$abrasive particles in CMP slurry.

• Solar Energy
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• 제17권4호
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• pp.67-74
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• 1997

The electrochromic $WO_3$ thin films were prepared by using the electron beam deposition technique. The influences of vacuum pressure were examined in terms of the surface morphology and the electrochromic properties of films. From the results, the electrochromic behavior of electron beam deposited films strongly depends on the vacuum pressure during deposition. The film prepared under a vacuum pressure of $5{\times}10^4$ mbar was found to be rather stable when subjected to the repeated coloring and bleaching cycles in an aqueous acid electrolyte of 1M $H_2SO_4$. It was also found that the degraded film by repeated cycling in the aqueous acid solution changed the grain shape of film surface.