• Journal of the Korean Electrochemical Society
• /
• v.17 no.1
• /
• pp.30-36
• /
• 2014

Redox complexes to transport electrons from enzyme to electrodes are very important part in glucose sensor. Pentacyanoferrate-bound aniline ($Fe(CN)_5$-aminopyridine), was prepared as a potential redox mediator in a glucose dehydrogenase (GDH)-glucose sensor. The synthesized pyridyl-$NH_2$ to pentacyanoferrate was characterized by the electrochemical and spectroscopic methods. A amperometric enzyme-linked electrode was developed based on GDH, which catalyses the oxidation of glucose. Glucose was detected using GDH that was co-immobilized with an $Fe(CN)_5$-aminopyridine and gold nano-particles (AuNPs) on ITO electrodes. The $Fe(CN)_5$-aminopyridine and AuNPs immobilized onto ITO electrodes provided about a two times higher electrochemical response compared to that of a bare ITO electrode. As glucose was catalyzed by wired GDH, the electrical signal was monitored at 0.4 V versus Ag/AgCl by cyclic voltammetry. The anode currents was linearly increased in proportion to the glucose concentration over the 0~10 mM range.

• Journal of the Korean Electrochemical Society
• /
• v.3 no.2
• /
• pp.115-120
• /
• 2000

All solid-state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of $Li/LiPON/V_2O_5Pt$. The effect of various oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by d.c. reactive sputtering deposition were investigated. The vanadium oxide thin film with deposition condition of $20\%\;O_2/Ar$ ratio showed good cycling behavior. In in-siか process, the LiPON electrolyte was deposited on the $V_2O_5$ films without breaking vacuum by r.f. magnetron sputtering at room temperature. After deposition of the amorphous LiPON, the Li metal films were grown by a thermal evaporator in a dry room. The charge-discharge cycle measurements as a function of current density and voltage variation revealed that the $Li/LiPON/V_2O_5$ thin film had excellent rechargeable properly when current density was $7{\mu}A/cm^2$. and cut-off voltage was between 3.6 and 2.7V In practical experiment, a stopwatch ran on this $Li/LiPON/V_2O_5$ thin film micro-battery. This result means that thin film micro-battery fabricated by in-siか process is a promising for power source for electronic devices.

• Journal of the Korean Electrochemical Society
• /
• v.19 no.1
• /
• pp.14-20
• /
• 2016

Vanadium redox flow battery (VRFB) is an energy conversion device in which charging and discharging are alternatively carried out by oxidation and reduction reactions of vanadium ions with different oxidation states. VRFB consists of electrolyte, electrode, ion-exchange membrane, etc. The role of ion-exchange membranes in VRFB separates anolyte and catholyte and provides a high conductivity to hydrogen ions. Recently much attention has been devoted to develop ideal ion-exchange membranes for VRFB. A number of developed ion-exchange membranes should be evaluated to find out ideal ion-exchange membranes for VRFB. Long-term durability test is a crucial characterization of ion-exchange membranes for commercialization, but is very time-consuming. In this study, the life time prediction protocol of ion-exchange membranes in VRFB cell tests was developed through short-term single cell performance evaluation (real total operation time, 87.5 hrs) at three different current densities. We confirmed a decrease in test time up to 96.2% of real durability tests (expected total operation time, 2,296 hrs) and 5~6% of relative error discrepancy between the predicted and the real life time in a unit cell.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.112-118
• /
• 2001

Magnetic field is commonly used in low temperature processing plasmas to enhance the performance of the plasma reactors. E$\times$B magnetron or surface multipole configuration is the most popular. However, the properties of capacitively coupled rf plasma confined by axial static magnetic field have rarely been studied. With these background, the effect of magnetic field on the characteristics of capacitively coupled 13.56 MHz/40 KHz argon plasma was studied, Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and emissive probe. At low pressure region (~10 mTorr), ion current increases by a factor of 3-4 due to reduction of diffusion loss of charged particles to the wall. Electron temperature slightly increases with magnetic field for 13.56 MHz discharge. However, for 40 KHz discharge, electron temperature decreased from 1.8 eV to 0.8 eV with magnetic field. It was observed that the magnetic field induces large temporal variation of the plasma potential. Particle in cell simulation was performed to examine the behaviors of the space potential. Experimental and simulation results agreed qualitatively.

• Korean Journal of Materials Research
• /
• v.9 no.8
• /
• pp.825-830
• /
• 1999

Characteristics of SiOF films deposited by a FTES/$O_2$-plasma enhanced chemical vapor deposition method have been investigated using Fourier transform infrared spectroscopy, X-ray photoelectro spectroscopy, and ellipsometry. Electrical properties such as dielectric constant, dielectric breakdown and leakage current density are investigated using C-V and I-V measurements with MIS(Au/SiOF/p-Si) capacitor structure. Stepcoverage of the films have been also characterized using scanning electron microscopy and ellipsometry. A high quality SiOF film was formed on that the flow rates of FTES and $O_2$were 300sccm, respectively. The dielectric constant of the deposited SiOF film was about 3.1. This value is lower than that of the oxide films obtained using other method. The dielectric breakdown field and leakage current are more than 10MV/cm and about $8[\times}10^{9}A/\textrm{cm}^2$, respectively. The deposited SiOF film with thickness as $2500{\AA}$ on the $0.3{\mu}{\textrm}{m}$ metal pattern shows a high step-coverage without a void.

• Proceedings of the KSME Conference
• /
• 2007.05b
• /
• pp.2222-2227
• /
• 2007

Newly structured metal-supported solid oxide fuel cell was fabricated and characterized by impedance analysis and galvanodynamic experiment. Using a cermet adhesive, thin ceramic layer composed of anode(Ni/YSZ) and electrolyte(YSZ) was joined with STS430 metal support of which flow channel was fabricated. $La_{0.8}Sr_{0.2}Co_{0.4}Mn_{0.6}O_3$ perovskite oxide was used as cathode material. Single cell performance was increased and saturated at operating time to 300hours at 800$^{\circ}C$ because of cathode sintering effect. The sintering effect was reinvestigated by half cell test and exchange current density was measured as 0.005A/$cm^2$. Maximum power density of the cell was 0.09W/$cm^2$ at 800$^{\circ}C$. Numerical analysis was carried out to classify main factors influencing the single cell performances. Compared to experimental IV curve, simulated curve based on experimental parameters such as exchange current density was in good agreement.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.27 no.5
• /
• pp.635-643
• /
• 2003

Parametric study for the analysis of performance characteristics of a planar -type solid oxide fuel cell(SOFC) using computational flow analysis is conducted. A planar -type SOFC, which is composed by two gas channels (fuel and ai.) and one set of anode-electrolyte-cathode assembly, is modeled as a two -dimensional isothermal case. Results of computational analysis of flow field including distributions of mass fractions in gas channels are used to the performance analysis of the fuel cell. Flow analysis makes it possible to consider current density distributions along the length of the cell in the process of performance analysis of the SOFC. As results of parametric study, it is found that the mole fraction of fuel at the inlet of fuel channel, operating pressure and temperature are closely related to the performance characteristics of SOFC.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2009.06a
• /
• pp.291-291
• /
• 2009

한국원자력연구원의 파이로 실험 시설인 ACPF (ACP Facility)에는 공학규모 전해환원 반응기가 설치되어 공정 대용량화를 위한 연구가 수행되고 있다 본 연구에서는 전해환원 공정의 Scale-up을 위해 기존 반응기를 개선하여 전해환원 실험을 수행한 결과를 담고 있다. 장치의 대형화 빛 원격운전성 향상을 위해 기존의 전해환원 반응기의 상부 플랜지는 보다 간단하게 정리되었으며 염 이송에 의한 고온 조건 노출 시간을 줄임과 동시에 염 재사용을 목적으로 상부 플랜지는 이중으로 설계되었다. 따라서, 반응 종료후 전극이 설치된 상부 플랜지를 들어 올림으로서 반응기를 불활성 분위기로 유지하는 동시에 전해환원 금속전환체를 회수 할 수 있도록 반응기가 제작되었다. 또한, 새로운 반응기는 용융염 내의 강제 유동을 위해 아르곤 버블링이 가능하도록 설계 제작되었다. 새로 제작 설치된 전해환원 반응기를 사용하여 산화물 분말을 혼합하여 준비한 모의 사용후핵연료를 사용하여 전해환원 실험을 수행하였다. 그 결과, 산화물이 충진된 음극의 전영역에서 고루 96% 이상의 높은 금속전환율을 얻었으며 시간에 따라 선택된 FP들의 용융염 내 거동을 측정하였다. 실리더 형태의 음극에서 Cs, Sr 등의 원소들이 용융염으로 시간에 따라 용출되는 것을 확인하였으며 동시에 반응기 재질인 Fe 등도 일부 용융염에서 검출되었다. 아르곤 버블링에 의한 강제 유동은 전압 및 전류 거동에는 큰 영향을 미치지 못하였으나 염의 휘발량을 증가시켜 영조성올 변화시키는 것으로 측정되었다. ACPF의 전해환원 실험결과를 바탕으로 반응기를 상부 기체상과 하부 액체상으로 나누어 전산모사를 수행하였다 상부 기체상은 유입되는 아르곤 기체와 발생되는 산소기체의 흐름을 모사하는 결과를 얻었으며 온도 및 산소의 분압을 계산하였다. 하부 액체상에서는 전기장을 모사하여 전류 밀도 등을 3차원으로 모사하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.106-106
• /
• 2000

반도체 소자가 미세화 됨에 따라 게이트 유전막으로 사용되는 SiO2의 박막화가 요구되나, boron penetration에 의한 Vt shift, 게이트 누설전류, 다결정 실리콘 게이트의 depletion effect 그리고 quantum mechanical effect 때문에 ~20 급에서 한계를 나타내고 있다. 이에 0.1$\mu\textrm{m}$이상의 design rule을 갖는 logic이나 memory 소자에서 요구되어지는 ~10 급 게이트 산화막은 SiO2(K=3.9)를 대신하여 고유전율을 갖는 재료의 채택이 필수 불가결하게 되었다. 고유전 박막 재료를 사용하면, 두께를 두껍게 해도 동일한 inversion 특성이 유지되고 carrier tunneling 이 덜하여 등가 산화막의 두께를 줄일 수 있다. 이러한 고유전박막 재료중 가장 활발히 연구되고 있는 재료는 Ta2O5, Al2O3, STO 그리고 BST 등이 있으나 Ta2O5, STO, BST 등은 실리콘 기판과 직접 반응을 한다는 문제를 가지고 있으며, Al2O3는 유전율이 낮의 재료가 최근 주목받고 있다. 본 실험에서는 ZrO2, HfO2 또는 그 silicates 등의 재료가 최근 주목 받고 있다. 본 실험에서는 ZrO2 박막의 증착조건에 따른 물리적, 전기적 특성 변화에 대하여 연구하였다. RCA 방식으로 세정한 P-type (100) 실리콘 기판위에 reactive DC sputtering 방법으로 압력 5mtorr, power 100~400W, 기판온도는 100-50$0^{\circ}C$로 변화시켜 ZrO2 박막을 증착한 후 산소와 아르곤 분위기에서 400-80$0^{\circ}C$, 10-120min으로 열처리하였다. 증착직후의 시편들과 열처리한 ZrO2 박막의 미세구조와 전기적 특성 변화를 관찰하였다. 우선 굴절율(RI)를 이용해 ZrO2 박막의 밀도를 예측하여 power와 기판온도에 따라 이론값 2.0-2.2 에 근접한 구조를 얻은 후 XRD, XPS, AFM, 그리고 TEM을 사용하여 ZrO2 박막의 chemical bonding, surface roughness 그리고 interfacial layer의 특성을 관찰하였다. 그리고 C-V, I-V measurement를 이용해 capacitance, 유전율, 누설전류 등의 전기적 특성을 관찰해 최적 조건을 설정하였다.

• Applied Chemistry for Engineering
• /
• v.7 no.6
• /
• pp.1078-1086
• /
• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.