• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.61-66
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• 2012

Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

• Journal of the Korean Electrochemical Society
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• v.18 no.3
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• pp.121-129
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• 2015

The platinum anode for the electrolytic reduction process is generally surrounded by a nonporous ceramic shroud with an open bottom to offer a path for $O_2$ gas produced on the anode surface and prevent the corrosion of the electrolytic reducer. However, the $O^{2-}$ ions generated from the cathode are transported only in a limited fashion through the open bottom of the anode shroud because the nonporous shroud hinders the transport of the $O^{2-}$ ions to the anode surface, which leads to a decrease in the current density and an increase in the operation time of the process. In the present study, we demonstrate the electrolytic reduction of 1 kg-uranium oxide ($UO_2$) using the porous shroud to investigate its long-term stability. The $UO_2$ with the size of 1~4mm and the density of $10.30{\sim}10.41g/cm^3$ was used for the cathode. The platinum and 5-layer STS mesh were used for the anode and its shroud, respectively. After the termination of the electrolytic reduction run in 1.5 wt.% $Li_2O-LiCl$ molten salt, it was revealed that the U metal was successfully converted from the $UO_2$ and the anode and its shroud were used without any significant damage.

• Applied Chemistry for Engineering
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• v.7 no.5
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• pp.999-1005
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• 1996

Pt catalyst on carbon black was prepared by colloidal method, ion exchanging method and methanol reducing method. The colloidal method has been used generally. At ion exchanging method, $H^+$ of functional group on carbon surface made by oxidation treatment was exchanged with Pt ion. At methanol reducing method, Pt was impregnated on carbon to reduce by methanol contained with surfactants. With TEM and XRD, Pt particle size impregnated on carbon by various methods was $30{\sim}50{\AA}$. Loading yield was about 100%, loading yield of ion exchanging method was 99.92% by DCP analysis and 99.87% by combustion method. Within 60 hour, current density of oxygen reduction was $460mA/cm^2$ at 0.7V(vs. RHE) at colloidal method. It was the better performance than catalyst prepared by ion exchanging, methanol reducing method. But, it was shown some decrease of performance for long operation time(after 100hour), catalyst prepared by methanol reducing method was shown stable performance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2879-2887
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• 2011

This research is aimed for the better understanding of corrosion behavior of carbon steel in ETA or $NH_3$ solution at high temperature. To minimize the corrosion it is important to select proper pH control agent(s), which also let it maintain basic or reductive environment inside the steel pipe. This work will provide the practical guideline which can be applied to the nuclear power plant for developing the life extension method of carbon steel. Experiments were carried out by measuring the corrosion rate using the potentiodynamic polarization curve of carbon steel in ETA and NH3 at different temperatures. The corrosion rate was estimated by using the Tafel curve measured under various test conditions: i) $NH_3$ is less than ETA as a pH agent. ii) the corrosion was reduced at high pH, and iii) the corrosion was maximum in the temperature range of $150\sim200^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.493-501
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• 2000

The microstructure and electrical properties of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_{3}$ based varistors were investigated with Er$_{2}$/O$_{3}$ additive content of the range 0.0 to 2.0 mol%. Most of the added Er$_{2}$/O$_{3}$ were segregated at the nodal points and grain boundaries and it coexisted with Pr$_{6}$/O$_{11}$ in the bulk intergranular layer. The average grain size was decreased in the range of 7.44 to 5.62${\mu}{\textrm}{m}$ at 130$0^{\circ}C$ and 18.36 to 9.11 at 135$0^{\circ}C$ with increasing Er$_{2}$/O sub 3/ additive content. The density of ceramics was in the range 4.87 to 5.08 g/cm$^3$ at 130$0^{\circ}C$ and 5.35 to 5.62 g/cm$^3$at 135$0^{\circ}C$. At 130$0^{\circ}C$ the varistors without Er$_{2}$/O$_{3}$ exhibited 29.66 in the nonlinear exponent and 28.23 $\mu$A in the leakage current whereas the varistors with 0.5 mol% Er$_{2}$/O$_{3}$ exhibited a high nonlinearity which is 52.78 in thenonlinear exhibited and 9.75 $\mu$A in the leakage current. At 135$0^{\circ}C$ the varistors without Er$_{2}$/O$_{3}$ exhibited a very poor nonlinearity indicating 2.08 in the nonlinear exponent and 133.79 $\mu$A in the leakage current whereas the varistors with 1.0mol% Er$_{2}$/O$_{3}$ exhibited a relatively high nonlinearity which is 36.79 in the nonlinear exponent and 5.92 $\mu$A in the leakage current. Therefore Er$_{2}$/O$_{3}$ was additive which greatly improve the nonlinearity. It is believed that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based ceramicss will be usefully used as a basic composition to develop the advanced pr$_{6}$/O$_{11}$-based ZnO varistors.ristors.ristors.

• Composites Research
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• v.32 no.6
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• pp.355-359
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• 2019

The high efficient water splitting system should involve the reduction of high overpotential value, which was enhanced by the electrocatalytic reaction efficiency of catalysts, during the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) reaction, respectively. Among them, transition metal-based compounds (oxides, sulfides, phosphides, and nitrides) are attracting attention as catalyst materials to replace noble metals that are currently commercially available. Herein, we synthesized optimal monodisperse Co₃[Co(CN)₆]₂ PBAs by FESEM, and confirmed crystallinity by XRD and FT-IR, and thermal behavior of PBAs via TG-DTA. Also, we synthesized monodispersed Co₃O₄ nanocubes by calcination of Co₃[Co(CN)₆]₂ PBAs, confirmed the crystallinity by XRD, and proceeded OER measurement. Finally, the synthesized Co₃O₄ nanocubes showed a low overpotential of 312 mV at a current density of 10 mA·cm^-2 with a low Tafel plot (96.6 mV·dec^-1).

• Membrane Journal
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• v.30 no.5
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• pp.307-318
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• 2020

Conventional perfluorinated sulfonic acid membrane, Nafion is widely used for vanadium redox flow battery (VRFB). It is desired to prevent vanadium ion permeation through a membrane to retain the capacity, and to keep the cell efficiency of a VRFB. Highly proton conductive and chemically stable Nafion membranes, however, suffer from high vanadium permeation, which induce the reduction in charge and discharge capacity by side reactions of vanadium ions. In this study, to resolve the issue, silica nanoparticles, which are functionalized with 3-aminopropyl group (fS) are introduced to enhance the long-term performance of a VRFB by lowering vanadium permeation. It is expected that amine groups on silica nanoparticles are converted to positive ammonium ion, which could deteriorate positively charged vanadium ions' crossover by Gibbs-Donnan effect. There is reduction in proton conductivity may due to acid-base complexation between fS and Nafion side chains, but ion selectivity of proton to vanadium ion is enhanced by introducing fS to Nafion membranes. With the composite membranes of Nafion and fS, VRFBs maintain their discharge capacity up to 80% at a high current density of 150 mA/㎠ during 200 cycles.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.183-188
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• 2002

In the present study AI$(CH_3)_3)$films were deposited by the ALD technique using trimethylaluminum(TMA) and ozone to improve the quality of the AI$(CH_3)_3)$ films, since the $OH^-$ radicals existing in the AI$(CH_3)_3)$ films deposited using TMA and $H_2O$ degrade the physical and the dielectric properties of the AI$(CH_3)_3)$ film. The XPS analysis results indicate that the $OH^-$ radical concentration in the AI$(CH_3)_3)$film deposited using $O_3$is lower than that using $H_2O$. The etch rate of the AI$(CH_3)_3)$film deposited using $O_3$is also lower than that using $H_2O$, suggesting that the chemical inertness of the former is better than the latter. The MIS capacitor fabricated with the TiN conductor and the $Al_2$O$_3$dielectrics formed using $O_3$offers lower leakage current, better insulating property and smaller flat band voltage shift $({\Delta}V_{FB})$.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.315-320
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• 2000

We have investigated the crystal structure and electrical properties of Pt/SBT/$ZrO_2$/Si (MFIS) and Pt/SBT/Si (MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$ZrO_2$/Si structure had larger grain than that of SBT/Si structure. $ZrO_2$ film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier by the analysis of AES. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$ZrO_2$/Pt/$SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-volt-age characteristics, the memory windows of Pt/SBT (210 nm)/$ZrO_2$ (28 nm)/Si structure were in the range of 1~l.5 V at the applied voltage of 4~6 V. The current densities of Pt/SBT/ZrO$_2$/Si with as -deposited Pt electrode and annealed at $800^{\circ}C$ in $O_2$ambient were $8\times10^{-8} A/\textrm{cm}^2$ and $4\times10^{-8}A/\textrm{cm}^2$ , respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.