• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.98-99
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• 2014

질산산화법(nitric acid oxidation method)은 저온에서 안정적인 산화막을 형성하는 직접산화공정으로 azeotropic point(68 wt%)인 120도 이하의 온도에서 산화막을 형성한다. 120도에서 형성한 질산산화막은 CVD법으로 형성한 산화막 보다 낮은 누설전류밀도(leakage current density)를 나타낸다. 또한 질산의 농도가 증가함에 따라 형성한 산화막의 누설전류밀도가 감소하며, 이는 열산화법으로 형성한 산화막 보다 낮다. 질산산화의 낮은 누설전류밀도는 형성한 산화막의 높은 원자 밀도와 낮은 계면준위밀도에 의한 것으로 이 특성을 이용하여 게이트 절연막(gate insulator)과 태양전지의 passivation막으로 응용되고 있다.

• Journal of Radiation Protection and Research
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• v.31 no.2
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• pp.105-113
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• 2006

The oxidizing species are generated from the radiolysis of groundwater in the pore of buffer material around the canister used for the disposal of spent fuels. A mathematical model was introduced to calculate the cathodic current density induced by the oxidant around the canister, which determined the corrosion of carbon steel. An analytical solution was derived to get the cathodic current density in the cylindrical coordinate. The cathodic current densities from both the rectangular coordinate and cylindrical coordinate were compared with each other. The source terms and absorbed dose rate for the calculation of the radiolysis were calculated using the ORIGEN2 and MCNP computer code, respectively. The radius of the canister was determined with the new model in order to prevent the local corrosion. The results showed that the new solution made the cathodic current density around 25 % lower than the Marsh model.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.1
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• pp.13-18
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• 1999

The trap density by the stress bias in silicon oxides with different thicknesses has been investigated. The trap density by stress bias was shown to be composed of on time current and off time current. The on time trap density was composed of dc current. The off time trap density was caused by the tunneling charging and discharging of the trap in the interfaces. The on time trap density was used to estimate to the limitations on oxide thicknesses. The off time trap density was used to estimate the data retention in nonvolatile memory devices.

• Journal of the Korean Vacuum Society
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• v.4 no.4
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• pp.402-406
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• 1995

MOS(금속 산화막 반도체 접합) 소자가 방사선에 노출되면, 산화막재에 양의 공간전하가 생성되고 Si-SiO2 계면에 계면준위가 생성된다. MOS 커패시터의 방사선 조사효과를 방사선 피폭량과 산화막의 두께를 달리하는 시편에서 정전용량과 전류변화를 측정하여 고찰하였다. 정전용량-바이어스 전압 특성 실험결과로부터 플렛밴드 전압 및 계면상태밀도를 계산하였다. 또한 전압-전류 특성은 방사선 조사로 산화막내에 생성된 양의 공간전하와 Si-SiO2 계면에 포획된 전하에 의해서 설명이 가능하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.29.1-29.1
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• 2018

양극산화 표면처리 방법의 일종인 플라즈마 전해산화(PEO, Plasma electrolytic oxidation)는 금속 소재에 양극 전압을 인가하여 고경도의 산화 피막을 금속 표면에 형성시키는 표면처리 기술이다. PEO 공정은 피막의 국부적 유전체 파괴에 의한 아크의 발생을 동반하며, 형성된 산화 피막이 아크 발생에 의한 높은 열에 의해 결정화 되어 일반적인 양극산화 피막보다 우수한 경도와 내마모성을 가진다. 하지만 PEO 공정은 고전압을 필요로 하여 일반적인 양극산화 처리보다 소모되는 전력량이 많으며, 아크 발생에 의해 형성된 피막의 표면 거칠기가 높기 때문에 활용 분야가 제한되거나 후속 연마 공정을 필요로 하는 단점이 존재한다. 본 연구에서는 전류 파형이 알루미늄 합금의 플라즈마 전해산화 피막의 형성 거동에 미치는 영향을 직류 및 펄스전류를 사용하여 연구하였다. NaOH 및 $Na_2SiO_3$가 혼합된 전해액에서 직류 전류 밀도, 전압, 펄스폭을 달리하여 알루미늄 합금에 전류를 인가할 때 발생되는 아크의 거동, 형성된 산화 피막의 두께, 거칠기, 경도, 표면 및 단면 구조를 비교 분석하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.25-35
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• 2000

A simple two-terminal cyclic current0voltage(I-V) technique was used to measure the current-transients in metal-oxide-semiconductor capacitors. Distinct charging/discharging currents were measured and analyzed as a function of the hold time, the delay time, the gate polarity during the FNT electron injection, the injection fluence and the annealing time after the injection had stopped. The charge-exchange current was distinguished from total current-transients containing the displacement current components. Charging/discharging current caused by the charge exchange was strongly dependent not only on the density of positive charges in the $SiO_2$, but also on the density of interface traps generated during the FNT electron injection. Several tentative mechanisms were suggested.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.12
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• pp.777-784
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• 2016

All-vanadium redox flow batteries (VRFBs) are used as energy storage systems for multiple intermittent power sources. The performance of the VRFBs depends on the materials and operating conditions. Hence, performance characterization is of great importance in the development of the VRFBs. This paper proposes a method for determining the maximum current density based on stoichiometric ratios. A laboratory-scaled VRFB with a projected electrode area of $25cm^2$ is electrically charged when the state of the charge has begun from 0.6. The operating conditions, such as current density and volumetric flow rate are important in the test, and the maximum current density is influenced by the mass transfer coefficient. The results show that increasing the electrolyte flow rate from 5 mL/min to 60 mL/min enhances the maximum current density up to $520mA/cm^2$.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.998-1003
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• 1998

$BaTiO_3$ thin film was electrochemically deposited on Ti electrode in a 0.4 M $Ba(OH)_2$ solution of $85^{\circ}C$ using a current pulse waveform. Both $BaTiO_3$ crystallinity and faradaic efficiency for the film formation were enhanced with the increase of cathodic current density and pulse time. Based on the surface analysis and electrochemical studies, it was suggested that, during cathodic pulsed, the surface pH increase due to the reduction of $H_2O$ accelerates the structural changes of Ti oxides which were formed during anodic cycle. Prior to experiments, Ti oxides were intentionally grown in 0.1 M $H_2SO_4$ solution and the effect of initial oxide film thickness on the $BaTiO_3$ film formation was investigated. The migration of $Ti^{+4}$ ions through the oxide film was retarded with the increase of film thickness and it was observed that the crystallization of $BaTiO_3$ was only limited to the defect area of surface oxides.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.557-562
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• 1998

방사성 물질로 오염된 유기성 고체폐기물의 분해를 위한 전기화학적 매개산화 공정을 개발할 목적으로 대상 폐기물로 셀룰로오스, latex 고무 및 플라스틱 물질에 대한 분해연구를 수행하였다. 매개체로써 Ag(II)를 사용하는 전기화학적 매개산화 공정에서 제어 가능한 인자인 전류밀도, 양극전해질의 농도 및 온도 등이 유기성 고체기물의 분해거동에 미치는 영향을 고찰하였다. 본 실험에서 사용한 유기성 고체폐기물은 전기화학적으로 생성되는 Ag(II)에 의해서 완전히 이산화탄소로 분해 되었으며, 한계전류밀도 이하에서 셀룰로오스 물질에 대해서는 80 %, latex 고무에 대해서는 76 %, 그리고 폴리프로필렌 물질에 대해서는 85 % 이상의 비교적 만족스러운 전류효율을 얻을 수 있었다. 질산의 농도 변화는 셀룰로오스 및 폴리프로필렌 물질의 분해에는 별 영향을 미치지 않았으나, latex 고무에 대해서는 비교적 큰 영향을 주었다. 또한 온도의 변화는 셀룰로오스 물질의 분해에는 거의 영향을 미치지 않았으나, latex 고무 및 폴리프로필렌 물질의 분해에는 비교적 큰 영향을 주었지만 전류효율 측면에서 85$^{\circ}C$ 이하에서 조업하면 충분함을 알 수 있었다. 결론적으로, Ag(II)에 의한 전기화학적 매개산화 공정은 혼성폐기물 중의 유기물을 저온에서 안전하게 분해 시킬 수 있으며, 소각 공정을 대체할 수 있는 한가지 방법이 될 수 있음을 확인하였다.