• Title/Summary/Keyword: 산화물 반도체

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Semiconductor Engineering (산화물반도체 트랜지스터의 전기적인 특성)

  • Oh, Teresa
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.390-392
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    • 2013

  • The research was observed the characteristic of ZnO based oxide semiconductors for the transparent conducting display. The optical-physical properties of ZnO based oxide semiconductors) grown on p-Si wafer were presented. ZnO based oxide semiconductors was prepared by the RF magnetron sputtering system. The characteristic of ZnO based oxide semiconductorswas strongly influenced by the amount of localized electron state by the defects. The PL spectra moved to long wave number with increasing the defects in the film. The mobility of a-IGZO film was increased with increasing the oxygen gas flow rate. The resistivity of ZnO based oxide semiconductors was also related to the mobility of ZnO based oxide semiconductors, and the mobility increased at the sample with low resistivity. The electric characteristic of a-IGZO TFTs showed that it is an n-type semiconductor.

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Solution-Processed Fluorine-Doped Indium Gallium Zinc Oxide Channel Layers for Thin-Film Transistors (용액공정용 불소 도핑된 인듐 갈륨 징크 산화물 반도체의 박막 트랜지스터 적용 연구)

  • Jeong, Sunho
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.3
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    • pp.59-62
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    • 2019

  • In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

  • https://doi.org/10.6117/kmeps.2019.26.3.059 인용 PDF KSCI