인포메이션 디스플레이 (Information Display)

한국정보디스플레이학회 (The Korean Infomation Display Society)
권호 표지

P형 산화물 반도체 박막트랜지스터 기술 동향

  • 권혁인 (중앙대학교 전자전기공학부) ;
  • 권수훈 (중앙대학교 전자전기공학부) ;
  • 주효준 (중앙대학교 전자전기공학부)
  • 발행 : 2018.06.30
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참고문헌

  1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hodsono, Nature 432, 488 (2004). https://doi.org/10.1038/nature03090
  2. J. Y. Kwon and J. K. Jeong, Semicond. Sci. Technol. 30, 024002 (2015). https://doi.org/10.1088/0268-1242/30/2/024002
  3. E. Ruiz, S. Alvarez, P. Alemany, R. A. Evarestov, Phys. Rev. B, 56, 7189 (1997). https://doi.org/10.1103/PhysRevB.56.7189
  4. Z. Wang, P. K. Nayak, J. A. Caraveo-Frescas, and H. N. Alshareef, Adv. Mater. 28, 3831 (2016). https://doi.org/10.1002/adma.201503080
  5. B. S. Li, K. Akimoto, and A. Shen, J. Cryst. Growth, 311,1102 (2008).
  6. M. A. Rafea and N, Roushdy, J. Phys. D: Appl. Phys. 42, 015413 (2009). https://doi.org/10.1088/0022-3727/42/1/015413
  7. K. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 202107 (2008). https://doi.org/10.1063/1.3026539
  8. E. Fortunato, V. Figueiredo, P. Barquinha, E. Elamurugu. R. Barros, G. Goncalves, S. -H. K. Park, C. -S. Hwang, and R. Martins, Appl. Phys. Lett. 96, 192102/239902 (2010).
  9. X. Zou, G. Fang, L. Yuan, M. Li, W. Guan, and X. Zhao, IEEE Electron Device Lett. 31, 827 (2010). https://doi.org/10.1109/LED.2010.2050576
  10. X. Zou, G. Fang, J. Wan, X. He, H. Wang, N. Liu, H. Long, and X. Zhao, IEEE Trans. Electron Devices 58, 2003 (2011). https://doi.org/10.1109/TED.2011.2142313
  11. Z. Q. Yao, S. L. Liu, L. Zhang, B. He, A. Kumar, X. Jiang, W. J. Zhang, and G. Shao, Appl. Phys. Lett. 101, 042114 (2012). https://doi.org/10.1063/1.4739524
  12. S. Y. Kim, C. H. Ahn, J. H. Lee, Y. H. Kwon, S. Hwang, J. Y. Lee, and H. K. Cho, ACS Appl. Mater. Interfaces, 5, 2417 (2013). https://doi.org/10.1021/am302251s
  13. W. Maeng, S. -H. Lee, J. -D. Kwon, J. Park, and J. -S. Park, Ceram. Int. 42, 5517 (2016). https://doi.org/10.1016/j.ceramint.2015.12.109
  14. S. Han, K. M. Niang, G. Rughoobur, and A. J. Flewitt, Appl. Phys. Lett. 109, 173502 (2016). https://doi.org/10.1063/1.4965848
  15. A. Togo, F. oba, I. Tanaka, and K. Tatsumi, Phys. Rev. B, 74, 195128 (2006). https://doi.org/10.1103/PhysRevB.74.195128
  16. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 032113 (2008). https://doi.org/10.1063/1.2964197
  17. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Kimura, M. Hirano, and H. Hosono, Phys. Status Solidi A 206, 2187 (2009). https://doi.org/10.1002/pssa.200881792
  18. L. Y. Liang, Z. M. Liu, H. T. Cao, Z. Yu, Y. Y. Shi, A. H. Chen, H. Z. Zhang, Y. Q. Fang, and X. L. Sun, J. Electrochem. Soc. 157, H598 (2010). https://doi.org/10.1149/1.3385390
  19. E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. -H. K. Park, C. -S. Hwang, and R. Martins, Appl. Phys. Lett. 97, 052105 (2010). https://doi.org/10.1063/1.3469939
  20. E. Fortunato and R. Martins, Phys. Status Solidi RRL 5, 336 (2011). https://doi.org/10.1002/pssr.201105246
  21. R. Martins, A. Nathan, R. Barros, L. Pereira, P. Barquinha, N. Correia, R. Costa, A. Ahnood, I. Ferreira, and E. Fortunato, Adv. Mater. 23, 4491 (2011). https://doi.org/10.1002/adma.201102232
  22. K. Okamura, B. Nasr, R. A. Brand, and H. Hahn, J. Mater. Chem. 22, 4607 (2012). https://doi.org/10.1039/c2jm16426d
  23. J. A. C. -Frescas, P. K. Nayak, H. A. A. -Jawhari, D. B. Granato, U. Schwingenschlogl, and H. N. Alshareef, ACS NANO, 7, 5160 (2013). https://doi.org/10.1021/nn400852r
  24. M. U, Y. -J. Han, S. -H. Song, I. -T. Cho, J. -H. Lee, and H. -I. Kwon, J SEMICOND TECH SCI, 14, 666 (2014). https://doi.org/10.5573/JSTS.2014.14.5.666
  25. Y. -J. Han, Y. -J. Choi, I. -T. Cho, S. H. Jin, J. -H. Lee, and H. -I. Kwon, IEEE Electron Device Lett. 35, 1260 (2014). https://doi.org/10.1109/LED.2014.2363879
  26. Y. -J. Han, Y. -J. Choi, C. -Y. Jeong, D. Lee, S. -H. Song, and H. -I. Kwon, IEEE Electron Device Lett. 36, 466 (2015). https://doi.org/10.1109/LED.2015.2409854
  27. C. -W. Zhong, H. -C. Lin, K. -C. Liu, and T. -Y. Huang, IEEE Electron Device Lett. 36, 1053 (2015). https://doi.org/10.1109/LED.2015.2465144
  28. P. -C. Chen, Y. -C. Chiu, Z. -W. Zheng, C. -H. Cheng, and Y. -H. Wu, J ALLOY COMPD 707, 162 (2017). https://doi.org/10.1016/j.jallcom.2016.11.294
  29. C. W. Shih, A. Chin, C. F. Lu, and W. F. Su, Scientific Reports 8, 889 (2018). https://doi.org/10.1038/s41598-017-17066-x
  30. Y. Li, J. Yang, Y. Wang, P. Ma, Y. Yuan, J. Zhang, Z. Lin, L. Zhou, Q. Xin, and A. Song, IEEE Electron Device Lett. 39, 208 (2018). https://doi.org/10.1109/LED.2017.2786237
  31. B. Liu, H. Yang, A. Wei, H. Zhao, L. Ning, C. Zhang, and S. Liu, Appl. Catal. B 172-173, 165 (2015). https://doi.org/10.1016/j.apcatb.2015.02.007
  32. S. Lany, J. O. -Guillen, and A. Zunger, Phys. Rev. B, 75, 241203 (2007). https://doi.org/10.1103/PhysRevB.75.241203
  33. T. Dutta, P. Gupta, A. Gupta, and J. Narayan, J. Appl. Phys. 108, 083715 (2010). https://doi.org/10.1063/1.3499276
  34. H. Shimotani, H. Suzuki, K. Ueno, M. Kawasaki, and Y. Iwasa, Appl. Phys. Lett. 92, 242107 (2008). https://doi.org/10.1063/1.2939006
  35. J. Jiang, X. Wang, Q. Zhang, J. Li, and X. X. Zhang, Phys. Chem. Chem. Phys. 15, 6875 (2013). https://doi.org/10.1039/c3cp50197c
  36. S. Liu, R. Liu, Y. Chen, S. Ho, J. H. Kim, and F. So, Chem. Mater. 26, 4528 (2014). https://doi.org/10.1021/cm501898y
  37. A. Liu, G. Liu, H. Zhu, B. Shin, E. Fortunato, R. Martins, and F. Shan, Appl. Phys. Lett. 108, 233506 (2016). https://doi.org/10.1063/1.4953460
  38. T. Lin, X. Li, and J. Jang, Appl. Phys. Lett. 108, 233503 (2016). https://doi.org/10.1063/1.4953222
  39. C. -T. Lee and Y. -H. Lin, Appl. Phys. Express 7, 076502 (2014). https://doi.org/10.7567/APEX.7.076502