• Spatial Information Research
• /
• v.16 no.3
• /
• pp.317-330
• /
• 2008

In this paper, the acquisition of digital imagery and the orthoimage generation were performed to set up working process. And another purpose of this thesis is to evaluate the accuracy of orthoimage by overlapping digital topographic map and digital cadastral map on it. The digital topographic map and digital cadastral map were superimposed on the orthoimage to check the accuracy as another approach of evaluation. The RMSE is ${\pm}0.364m$ in X direction and ${\pm}0.413m$ in Y direction with digital topographical maps(1/5,000). And the RMSE is ${\pm}1.283m$ in X direction and ${\pm}1.085m$ in Y direction with digital cadastral map. It is necessary for the application of a newly developed digital aerial camera to make an exact synchronization between GPS/IMU data and image data, use a technology for setting a standard image resolution and the number of ground control points.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.158-158
• /
• 2010

최근 전자산업의 발전은 형상 면에서 경박 단소화로 급속하게 진행되고 있으며, 전자소자 내부에서의 배선재료로 사용되고 있는 알루미늄(Al) 박막의 두께 역시 얇아지고 있다. 극박막 범위에서 박막의 두께 증가에 따라 전기가 잘 흐르기 시작하는 박막의 최소두께로 정의 되는 유착두께를 실시간으로 측정하는 방법을 구현하고 임의의 금속박막과 기판의 조합에 있어서 각각의 재료에 대한 유착두께를 제공함으로써 향후 미세전자소자의 제작 시 배선 재료의 선택에 대한 기초자료를 축적할 수 있다. 또한 박막의 미세구조 변화 관점에서 연구함으로써 여러 가지 금속박막에 대한 유착두께를 줄일 수 있는 방법을 도출할 수 있다. 본 연구에서는 유리 기판 위에 사진 식각 공정으로 패턴을 형성하고 패턴이 형성된 유리 기판은 스퍼터에 연결된 4 point probe에 구리 도선으로 연결한 후 DC 마그네트론 스퍼터법으로 Al, Cr, ITO, Sn을 증착하면서 실시간으로 시간에 따른 면저항을 측정하며 이 때 스퍼터 내부 진공도는 $4.6{\times}10^{-5}$까지 낮춰준 후 각각의 금속에 맞는 진공도를 설정하였다. 20.0 sccm의 Ar가스를 넣고 100 W파워로 플라즈마를 형성시켜 금속을 증착하면서 4-point probe를 이용하여 실시간으로 면저항을 측정했다. 1초 단위로 면저항을 측정한 결과 평균적으로 Al은 71초, Cr은 151초, ITO는 61초, Sn은 20초에 저항이 급격히 감소함을 알 수 있었다. 또한 저항이 급격히 감소한 시점의 박막 두께를 알기 위해Surface profiler로 박막두께를 측정한 결과 1초당 Al은 $4\;{\AA}$, Cr은 $1.7\;{\AA}$, ITO는 $2.7\;{\AA}$, Sn은 $6.7\;{\AA}$ 이었다. 실험적으로 R은 면저항, T는 증착 시간이라 할 때 Y축을 $R{\times}T^3$으로 하고 X축을 T로 설정하고 그래프로 나타내면 Y축 값이 최소값을 갖는 시점이 유착두께임을 확인하였다. 본 연구는 실시간 면저항 측정을 통한 금속박막의 전기전도 특성과 미세구조에 대한 기초자료를 제공함으로써 신기술 발전에 공헌할 것이다.

• Journal of Conservation Science
• /
• v.27 no.3
• /
• pp.251-260
• /
• 2011

This study focus on the suggestion of standard legend, the process system on making method of deterioration map, the development of crack index (CI), and the evaluation techniques of surface and 3D deterioration rate for stone cultural heritage. The standard legends of deterioration forms were made using a common graphic program after crack, blistering, scaling, break-out, granular disintegration, and perforation were subdivided. The deterioration map improved accuracy and reliability on deterioration range using 3D digital restoration and high resolution photograph mapping technique. Also, quantitative deterioration evaluation of stone cultural heritage was carried out developing the crack index, and the 3D deterioration rate of a break-out part was calculated by virtual restoration modeling. As a quantitative deterioration evaluation of Magoksa Temple stone pagoda based on the results described above, the north face showed high deterioration rate of bursting crack (1.70), hair crack (1.34), scaling (20.2%) and break out (13.0%), and the 3D deterioration rate of first roof stone was 6.7%.

• Journal of the Korean Vacuum Society
• /
• v.13 no.3
• /
• pp.127-131
• /
• 2004

Package reliability test was conducted to investigate the effect of solder composition on the ball fatigue strength for BGA (Ball Grid Array) packaging. The test pieces are assembled using eutectic composition 63Sn/37Pb, 62Sn/36Pb/2Ag, and 63Sn/34.4Pb/2Ag/0.5Sb solder after pre-conditioning at MRT Lv 3 (Moisture Resistance Test Level) and then conducted under T/C (Temperature Cycle test). For each case, the ball shear strength was obtained and micro structure photos were taken. SEM (scanning electron microscope) and EDX (Energy Dispersive X-ray) were used to the analyze failure mechanism. The growth rate of Au-Sn intermetallic compound in Sn63Pb34.5Ag2Sb0.5 solder was slow when compared to 63Sn/37Pb solder and 62Sn/36Pb/2Ag solder. The degradation of shear strength of solder balls caused by solder composition was discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.120-120
• /
• 2018

반도체 소자나 디스플레이 패널 제조 공정에 가장 많이 사용되는 진공 펌프인 터보 분자 펌프는 오일을 사용하지 않고, 설치 방향이 자유로우며 넓은 작동 압력 영역을 가지고 있어서 고가임에도 불구하고 점점 더 사용 영역을 넓혀 가고 있다. 상하의 두 곳에 회전축을 지지하는 베어링이 필요한데, 기계식 금속 베어링을 채용하는 경우에는 반드시 윤활유를 공급해 주어야 하고, 고온, 부식성 또는 산화성 가스의 배기 시에는 퍼지 가스로 비활성인 질소나 알곤등을 이용하여 보호를 해주어야 한다. 반면, 자기 베어링을 채택한 모델은 윤활의 걱정에서 자유로울 수 있기 때문에 채용이 늘어나고 있다. 동일극의 반발력이나 반대극의 인상력을 이용한 구조를 갖게 되는데 갑작스러운 입구 쪽 압력의 증가 시에는 자석 끼리 부딪치는 일이 발생하고 이로 인해서 로터 모듈 전체에 큰 손상을 갖게 되므로 한 곳 정도에 비상용 터치 다운 베어링을 기계식으로 윤활제 없이 설치하기도 한다. 기본적으로 자기 베어링 방식은 로터 모듈의 부상과 제어를 위해서 3축 또는 5축 제어를 하게 되는데 여기에는 전자석의 전류를 미세하게 조정하여 피드백 하는 시스템을 활용하기 때문에 외부에서의 자기장이 일정값 이상 침투하게 되면 제어 회로의 기능에 문제를 일으키게 된다. 또한 축 방향에 수직인 자기장의 강도가 높아지면 고속으로 회전하는 금속 블레이드가 자속을 자르게 되므로 표면에 와전류가 발생하여 문제가 된다. 터보 분자 펌프는 회전자와 고정자 간격이 1 mm 이내로 작아서 약간의 진동이라도 발생하면 회전자와 고정자 간에 충돌이 일어나고 이는 곧 파손으로 이어진다. 그림 1에는 파손 원인 분석을 위한 회전자 모듈의 수치 해석용 모델의 일부를 나타내었고, 그림 2에는 실제로 외부 자기장에 의한 파손이 발생한 사례의 자기 베어링 모듈의 사진을 나타내었다. 본 발표에서는 외부 자기장의 형태에 따라 제어 자기장에 미치는 영향을 CFD-ACE+(ESI corp)를 활용하여 해석하였다.

• Korean Journal of Optics and Photonics
• /
• v.16 no.4
• /
• pp.340-344
• /
• 2005

Microlens cells of Ge-doped BPSG (Boro-Phospho-Silicate Glass) are fabricated by dicing the film produced by FHD (Flame Hydrolysis Deposition). Microlens arrays of $53.4{\mu}m$ square unit are produced by the thermal reflow of the diced unit cells at $1200^{\circ}C$. The gap between the microlenses was about $70{\mu}m,$ and the thickness of the produced lens was about $28.4{\mu}m$. We analyzed the reflowed shape of the microlens cell by an image-process technique, and the focal length was about $62.2{\mu}m$. This method of fabricating a microlens is simple and inexpensive compared to the conventional method using the photolithographic process. Also, the control of the radius of curvature of the microlens is easier and a more precise microlens way of various types can be fabricated using this method.

• Journal of Digital Convergence
• /
• v.9 no.2
• /
• pp.131-140
• /
• 2011

As the recent advances in network and wireless communications and semiconductor design and process technologies, our computing platform is rapidly shifting from desktop PCs to mobile devices such as UMPC (Ultra Mobile PC), Tablet PC, and Smartphone. Especially, wide-spreading Smartphones allow a new field of application based on location based services available with an user interface called augmented reality (AR). Therefore, this paper introduces an implementation of AR using various OpenAPls on Android Smartphones. In order to utilize enrich user data in real time, the system integrates with location based social network services also with OpenAPI. These APIs enable third-party developers to make use of rich contents of many portal web sites. The prototype was implemented on the real Android phone, Sky Sirius, and the result shows that it can provide an efficient location based service using AR technology without any constraints on mobile devices; in addition, it connects SNS to AR for sharing user data including photos, videos, and messages based on a specific location.

• Journal of the Korean Magnetics Society
• /
• v.9 no.6
• /
• pp.301-305
• /
• 1999

NiFe(60$\AA$)/Co(5$\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valve thin films were patterned into magnetoresistive random access memory (MRAM) cells by a conventional optical lithography process and their output and switching properties were characterized with respect to the cell size and geometry. When 1 mA of constant sense current was applied to the cells, a few or a few tens of mV of output voltage was measured within about 30 Oe of external magnetic field, which is an adequate output property for the commercializing of competitive MRAM devices. In order to resolve the problem of increase in the switching thresholds of magnetic layers with the downsizing of MRAM cells, a new approach using the controlled shape anisotropy was suggested and interpreted by a simple calculation of anisotropy energies of magnetic layers consisting of the cells. This concept gave a reduced switching threshold in NiFe(60$\AA$)/Co(5$\AA$) layer consisting of the patterned cells from about 15 Oe to 5 Oe and it was thought that this concept would be much helpful for the realization of competitive MRAM devices.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.35-40
• /
• 1993

A FET(field effect transistor) type lipid sensor was fabricated uy immobilizing lipase enzyme on the gate of pH-ISFET($SiO_{2}/Si_{3}N_{4}$). A water soluble polymer, polyvinyl alcohol(PVA) was modified with 1-methyl-4-(formyl-styryl) pyridinium methosulfate(SbQ) to give a photosensitive membrane(PVA-SbQ) in which lipase was immobilized. The optimum photolithographic conditions were ; spin coating speed $5,000{\sim}6,000$ rpm. UV exposure time $20{\sim}30$ seconds, developing time in water $30{\sim}40$ seconds, and vacuum drying time 45 min. at room temperature with the suspension containing PVA-SbQ aqueous solution(SbQ 1mol%, 10 wt %) $200{\mu}L$, bovine serum albumin (BSA) 7.5 mg, and lipase 10 mg. The lipid sensor showed good linear calibration curve in the range of $10{\sim}100$ mM triacetin as a lipid sample.

• Journal of the Korean Vacuum Society
• /
• v.14 no.4
• /
• pp.201-206
• /
• 2005

In this work, we tried to improve the fabrication process in HVPE (Hydride Vapor Phase Epitaxy) system by using Si(111) substrate with pre-deposited Al layer. PL measurements was done for samples with and without pre-deposited Al on Si and it was also examined the dependence of the optical characteristic properties on AlN buffer thickness for GaN/AIN/Al/Si. A sample with thin Al nucleation layer on Si substrate reveals a better optical property than the other. And it suggests that the thickness for AlN buffer layer with thin Al nucleation layer on Si(111) substrate is most proper about $260{\AA}$ to grow GaN in HVPE system. The surface morphology of GaN clearly shows the hexagonal crystallization. The XRD pattern showed strong peak at GaN{0001} direction.