• Title/Summary/Keyword: 비정

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A Numerical Analysis of Buyoyant Surface Jet with Turbulence Models (난류모형을 이용한 表層密度噴流의 수치해석)

  • 최한기;중십계
    • Water for future
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    • v.29 no.2
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    • pp.221-233
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    • 1996
  • To investigate the hydrodynamic characteristics of a two-dimensional buoyant surface jet, the most important factors of the numerical analysis are the evaluation of the free surface and the turbulence transportation under the stratification. In present study, a numeriacal simulation model used with the semi-implicit method for pressure-linked equations (SIMPLE), the non-hydrostatic approximation and the algebraic stress model (ASM) is applied to investigate the vertical structure of internal flow hydrodynamically. The ASM enables to take account of anisotropy of turbulence, the damping effects of the density interface, and the free surface on the turbulence structure accurately. The ASM tested produces better agreement than the $\kappa-\varepsilon$ model with measurements by Nakatsuji (1984) on the flow development and turbulence structure. Applicability of the ASM to a two-dimensional buoyant surface jet is examined through comparison with experimental data.

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Sputter방식으로 형성된 IGZO박막의 Ar 유량 변화에 따른 특성 연구

  • Wang, Hong-Rae;Hwang, Chang-Su;Kim, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.367-367
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    • 2012
  • TTFT에 투명반도체로 사용되고 있는 IGZO 박막의 특성을 조사하였다. IGZO박막은 비정질임에도 불구하고 높은 이동도를 가지는 것으로 알려져 있다. 본 실험에서는 RF magnetron sputtering법을 이용하여 Ar Gas 유량 변화에 따른 IGZO 박막을 유리 기판 위에 제작 하였고 투명반도체의 구조적, 광학적, 전기적 특성을 조사하였다. 소결된 타겟 으로는 In:Ga:ZnO를 각각 1:1:2mol%의 조성비로 혼합하여 이용하였으며, $30{\times}30mm$의 XG Glass 유리기판에 Sputtering 방식으로 증착하였다. 공정 조건으로는 초기합력은 $2.0{\times}10^{-6}Torr$이하로 하였으며, 증착 압력은 $2.0{\times}10^{-2}Torr$로 하였다. Rf power를 75 W로 고정시켰다. 실험 변수로는 Ar Gas를 25, 50, 75, 100 sccm으로 변화를 주어 실험을 진행하였으며, 증착온도는 실온으로 고정하였다. 분석 결과로는 Ar Gas가 75 sccm일 때 XRD분석결과 $34^{\circ}$ 부근에서 (002) c-축 방향성 구조임을 확인할 수 있었으며, AFM분석결과 0.3 nm이하의 Roughness를 가졌다. UV-Visible-NIR 측정결과 가시광선 영역에서 85%이상의 투과도를 만족 시켰으며, Hall 측정결과 Carrier concentration $8.3{\times}101^{19}cm-^{-3}$, Mobility $12.3cm^2/v-s$이며, Resistivity $0.6{\times}10^{-2}{\Omega}-cm$, 투명반도체로 사용 가능함을 확인 할 수 있었다.

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Halloysite Formation by the Alteration of Trachytic Glass in Ulleung Island (울릉도 조면암질 유리의 변절에 의한 할로이사이트의 생성)

  • Jeong, Gi-Young
    • Journal of the Mineralogical Society of Korea
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    • v.24 no.2
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    • pp.111-118
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    • 2011
  • Hydrated halloysite was formed by the low temperature alteration of trachytic tuff in onion-like spherical or curly platy forms. The Si content was higher than that of ideal kaolin minerals, indicating the possible presence of amorphous materials. The high Fe content is responsible for the platy morphology of halloysite. The leached ions precipitated as halloysite filling the interparticle pores, while trachytic glass was replaced by Si-rich amorphous materials in an hemispherical form, which was further evolved into spherical halloysite. Halloysite is one of the major alteration products of the volcanic ash in Ulleung Island underwent intense trachytic volcanism.

Preparation of Nano-size BaTiO3 Powders Using Glycothermal Method (Glycothermal법을 이용한 나노 사이즈 BaTiO3분말의 제조)

  • 김병규;임대영;노준석;조승범
    • Journal of the Korean Ceramic Society
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    • v.39 no.7
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    • pp.642-648
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    • 2002
  • Barium Titanate(BaTiO$_3$) nanoparticles were prepared at 22$0^{\circ}C$ through glycothermal process by using barium hydroxide and amorphous titanium hydrous gel as precursor and 1,4-butanediol and distilled water as solvent. It is demonstrated that the size of BaTiO$_3$ particles can be controlled by reaction conditions such as various content of 1,4-butanediol/distilled water volume ratio. This processing method can fabricate BaTiO$_3$ powders, which have a narrow distribution and exhibit good dispersion. The particle size of BaTiO$_3$ powders obtained by glycothermal process were about 50 nm to 200 nm on the condition that reaction temperature was 22$0^{\circ}C$ and holding time was 24 h.

플라즈마 진단을 통한 플라즈마와 TCO박막 특성간의 상관관계 고찰

  • Sim, Byeong-Cheol;Kim, Seong-Il;Choe, Yun-Seok;Choe, In-Sik;Han, Jeon-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.322-322
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    • 2011
  • Transparent Conductive Oxide (TCO) 박막은 디스플레이 산업에 낮은 면저항 및 높은 광투과성으로 없어서는 안 될 중요한 물질로 많은 선행연구가 진행되어져 왔다. 하지만 전 세계적으로 플라즈마와 TCO박막의 특성과의 상관관계에 대한 연구가 부족하여, 디바이스 업계에서 요구하는 수준에 미치지 못하고 있다. 본 연구에서는 저온 공정이 가능한 dual pulsed magnetron sputtering을 이용해 TCO박막을 합성하고 플라즈마 특성 변화에 따른 TCO 박막의 상관관계를 규명 하고자 한다. Dual pulsed magnetron의 자장에 의해 구속되는 플라즈마 내의 이온 종들과 이온과 중성자의 비율관계를 optical emission spectroscopy (OES)로 확인 하였고, 기판 전류 및 기판 온도 측정, Langmuir probe를 통한 플라즈마 특성 분석을 통하여 플라즈마와 특성과 박막 성장과의 상관관계에 대하여 규명 하였다. 전자 온도는 1.25 eV에서 2.46 eV 증가하는 것을 확인할 수 있었으며, 이온 밀도는 $1.7{\times}109/cm^3$에서 $2.2{\times}109/cm^3$ 증가하는 것을 확인하였다. 이러한 플라즈마 밀도가 증가함에 따라 박막은 비정질에서 다결정질로 바뀌면서 전기이동도는 증가하고 전자 농도는 감소하여 87.8%의 높은 투과율과 <50 ${\Omega}/{\Box}$의 면저항을 갖는 TCO 박막을 합성 하였다.

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Microstructure and Characteristics of Mechanically Alloyed Ni-W(WC) (기계적 합금화한 Ni-W(WC)의 미세구조 및 특성)

  • Sin, Su-Cheol;Jang, Geon-Ik
    • Korean Journal of Materials Research
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    • v.8 no.12
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    • pp.1133-1137
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    • 1998
  • By the mechanical alloying method Ni-W(WC) composite materials were prepared to improve the resistance for creep and sintering of Ni-anode at the operating temperature of$ 650^{\circ}C$. Amorphization was observed from the XRD analysis of mechanically alloyed powder caused by the destruction of ordered crystals. Sintering was performed at $1280^{\circ}C$ for 10 hours in $H_2$ atmosphere. From the result of dot-mapping and TEM analysis the second phase was not observed at Ni-W interface while W particles of less 0.lam were distributed finely and uniformly in Ni matrix. This finely and uniformly distributed W in Ni matrix is expected to enhance the mechanical properties of Ni-anode through the dispersion and solid solution hardening mechanisms.

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The Effect of the Processing Conditions on the Electrical Resistivity of Tantalum Nitride Thin Film Coated by the Reactive Sputtering (Sputtering법으로 제조된 TaNx 박막의 제조조건에 따른 전기저항 변화)

  • Choe, Yong-Rak;Kim, Seon-Hwa
    • Korean Journal of Materials Research
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    • v.7 no.12
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    • pp.1052-1057
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    • 1997
  • 현재 전기, 전자, 우주, 자동차, 무기 등의 여러 분야에서 응용되고 있는 TaNx 다층박막저항체의 특성을 개선하기 위하여 magnetron sputtering법으로 TaNx박막을 제조한 후, 온도와 질소분압에 따른 전기저항 및 TCR특성 변화를 조사하였고, 미세조직이 이들 전기적 성질에 미치는 영향을알아보기 위해 상분석과 morphology를 관찰하였다. 그 결과, TaNx을 코팅한 박막의 전기저항은 $N_{2}$Ar이 0.4 이상에서, 금속전도특성에서 이온전도특성으로 변화하였으며,Cr이 TCR효과를 안정시키는 역할은 하여 TaNx/A $I_{2}$ $O_{3}$보다 TaNx/Cr/A $i_{2}$ $O_{3}$박막의 TCR특성이 더 안정하게 나타났다. 또한 TaNx/A $I_{2}$ $O_{3}$박막과 TaNx/Cr/A $i_{2}$ $O_{3}$박막의 경우 모두 $N_{2}$/Ar이 0-0.4정도에서 TCR효과에 좋은 특성을 나타내었다. X-선회절 실험 결과 $N_{2}$/Ar비가 1일 경우에 T $a_{2}$ $N_{.8}$이 생성되었고, 분압이 증가함에 따라 비정질이 생성되었다. morphology가 $N_{2}$/Ar이 증가함에 따라 입자의 모양이 불연속아일랜드 형태로 변화하였으며, 이것은 질소분압에 따른 전기저항 변화와 일치하였다.다.

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Effect of Proton Irradiation on the Spectrum of Initial Susceptibility in Amorpyous Ribbon (비정질에서 양성자 조사에 따른 초기 감수율 이완 특성)

  • 김철기;김호철;윤석수;박덕근;홍준화;지세환
    • Journal of the Korean Magnetics Society
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    • v.8 no.2
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    • pp.57-61
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    • 1998
  • The complex magnetic susceptibility of as-quenched and proton irradiated amorphous ribons of $FE_{81}B_{13.5}Si_{3.5}C_2$ was measured in the frequency range 10 KHz~ 10 MHz. The frequency spectra of real and imaginary parts of susceptibility showed a typical Debye-type relaxation. Relatively high relaxtion frequency, ~3 MHz observed in the present work suggented that domain rotation is involved in the relaxation process. The susceptibility at the low frequency decreased with the irradiation, while that at high frequency increased due to the increasing defect density. The relaxation frequency of domain roation shifted toward higher frequency, due to the increasing pinning force against domain motion by the irradiation.

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Fabrication of Boron-Doped Polycrystalline Silicon Films for the Pressure Sensor Application (압력센서용 Boron이 첨가된 다결정 Silicom 박막의 제조)

  • 유광수;신광선
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.3 no.1
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    • pp.59-65
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    • 1993
  • The boron-doped polycrystalline silicon films which can be used in pressure sensors were fabricated in a high-vacuum resistance heating evaporator. Poly-Si films were deposited on quartz substrates at various temperatures and the boron was doped to the silicon film in a diffusion furnace using BN wafer. The silicon films deposited at $500^{\circ}C$ was amorphous, began to show crystalline at $600^{\circ}C$, and became polycrystalline at $700^{\circ}C$. After doping boron at $900^{\circ}C$for 10 minutes, the resistivity of the films was in the range of $0.1{\Omega}cm~1.5{\Omega}cm$, the boron density was $9.4\times10^{15}~2.1\times{10}^{17}cm^{-3}$, and the grain size was $107{\AA}~191{\AA}$.

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Spatial Characters of Korean Cheonghak-dong Utopia (한국 이상향의 성격과 공간적 특징 -청학동을 사례로-)

  • Choi, Won-Suk
    • Journal of the Korean Geographical Society
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    • v.44 no.6
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    • pp.745-760
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    • 2009
  • Cheonghak-dong is a prototype of Korean traditional utopia. Cheonghak-dong Utopia assumed at Jiri Mountain in the late of Goryeo period, and the place name of Cheonghak-dong could be found at the Royal capital(Hanyang) in early Joseon Dynasty, and then it diffused to the outskirts of the original place and local area in the middle period of Joseon Dynasty, eventually it diffused to the nationwide in the modern times. Now, Cheonghak-don was fixed at Mukgea village in Hadong-county officially. The placeness of Cheonghak-dong was changed from the fairyland to the human habitation and a sightseeing place.