• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.49-52
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• 2000

The changes of magnetic properties in neutron irradiated F $e_{81}$ $B_{13.5}$S $i_{3.5}$ $C_2$ amorphous ribbon were studied by X-ray diffraction, hysteresis loop, temperature dependence of magnetization and complex permeability. The fluences of thermal ( $n_{th}$) and fast ( $n_{f}$) neutron were 6.95$\times$10$^{18}$ $n_{th}$ c $m^{-2}$ and 4.56$\times$10$^{16}$ $n_{f}$c $m^{-2}$ , respectively. The changes of XRD Profiles were not observable at the neutron irradiated sample. The complex permeability spectra showed that the permeability from domain wall motion decreased due to the increase of pinning force against domain motion by the neutron irradiation, and the relaxation frequency of rotational magnetization moved to higher frequency region. The measurement of hysteresis loop showed the increase of magnetic softness, related to rotational magnetization, but saturation magnetization was decreased in neutron irradiation sample. The Curie temperature was decreased in the neutron irradiated sample.e.e.e.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.21-26
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• 1998

The temperature dependence of the magnetoimpedance (MI) effect is important both for scientific study and for thermal stability of MI sensor. We have performed the measurement of MI effect in amorphous $Co_{66}Fe_1Ni_1B_{14}Si_{15}$ (Metglas 2714 A) ribbon from a cryogenic chamber where the temperature of the sample can vary from 10 K to 300 K. The ac current was fixed at 10 mA for all measured frequencies ranging from 100 KHz to 10 MHz. The magnetoimpedance ratio (MIR) was revealed the drastic increment as a function of MIR (T) = MIR (0) exp(cT$^2$) where c is a constant. The measured MIR values at room temperature are usually 2-3 times larger than the data measured at 10 K for all measured frequencies. However, the shapes of the MIR curves are remained. This result shows the potential application of the MI effect for a temperature sensor. The frequency dependence of MIR has shown the typical tendency where the maximum values of MIR are increasing ans also the shapes of MIR curves are getting broader as the measured frequency increases.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.63-69
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• 1996

D.c conductivity and optical transmittance of amorphous ($As_2Se_3$)Ag, (x =0, 2, 5, 10mol%) thin films were measured in order to find effects of Ag additives on electrical and optical properties of the films. The d.c. activation energy and the optical gap decreased with increasing Ag contents the Urbach tail was approximately unchangeable for variation of Ag contents. For Ag contents of 5mol% and less, the rate of decrease of the d.c activation energy was more rapidly than that of the optical gap with increasing Ag contents. For Ag contents more than 5mol%, the rate of decrease of the d.c activation energy and the optical gap were nearly the same each other with decreasing Ag contents. So it was appeared that the Fermi level of the films comes close to the mobility edge for Ag contents of 5mol% and less, and the mobility edge comes close the Fermi level for Ag contents more than 5mol%.

• Journal of the Mineralogical Society of Korea
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• v.25 no.2
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• pp.77-84
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• 2012

Anatase, one of the $TiO_2$ polymorphs, is known to show different phase transition paths depending on its crystalline and shape. Particle size of 15~25 nm anatase has been subjected to high-pressure Raman spectroscopy and X-ray diffraction studies using a diamond anvil cell. We observe that the starting sample transforms to an amorphous phase above approx. 20 GPa, which is retained upon pressure release to ambient condition. This is in contrast to previously established transition to baddeleyite phase and we suspect difference in the particle distribution state trigger phase instability of nanoparticles and hence amorphization.

• Journal of the Mineralogical Society of Korea
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• v.18 no.4 s.46
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• pp.289-299
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• 2005

Annealing experiments on albite powders, thin sections, and TEM specimens have been performed utilizing an optical microscope heating stage. Sample orientations were determined by optical microscope and XRD, and then confirmed by TEM diffraction patterns. Partial melting of samples occurred at $1030^{\circ}C$-l2 hr for powder, but at $1060^{\circ}C$-12 hr for TEM specimen. It is difficult to get TEM images of albite microstructures above this temperature due to thickening and the amorphous phase of the melted part. Correlative studies between optical microscopy and TEM indicated that the $1050^{\circ}C$-12 hr annealing in ambient condition was most adequate to observe tweed microstructures in albite through TEM. In situ TEM heating experiments for direct observation of tweed microstructures in albite may require annealing at slightly higher temperatures than $1050^{\circ}C$ considering the high vacuum condition inside TEM.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.151-158
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• 2002

Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.105-111
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• 1999

This paper presents experimental results on the electrical properties of hydrogenated amorphous carbon films(a-C:H) prepared by PECVD. DC conductance of a-C:H was measured as a function of temperatures in the range of 100 to 423K. We studied two a-C:H films: one was well explained by the Mott's Variable Range Hopping(VRH) rule, but the other sample did not follow it. However, the conduction data of second sample were well fitted to Shimakawa's Multi-Phonon Hopping(MPH) model according to which conductivity is proportional to $T^M$ with m=15-17. but, in our samples, m was 10-12. Also a-C:H showed several bias effects like relaxation of conductance, bias-dependent conductance and the change of conductance slope in 1n(${\sigma}{\sqrt{T}}$) vs. $T^{1/4}$ plot. In this study we interpret these data by bias-dependent detrapping model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.334-345
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• 2008

컴퓨터의 발달과 더불어 현대사회는 기록하고 보존해야할 정보의 양이 점점 방대해 지고 있다. 그로 인해 자기기록매체처럼 정보를 사용자의 편의에 따라 반복적으로 기록하고 재생할 수 있는 광기록매체에 대한 관심이 증가되고 있다. $Ge_2Sb_2Te_5$(GST)는 기존의 CD-RW나 Floppy Disk(FD)를 대체할 차세대 기록매체로 주목받고 있다. 따라서 본 연구에서는 비정질상과 결정상으로 변하는 성질을 가지고 있는 GST롤 상변화 기록매체로서 이용하기 위해 굴절률을 평가하였다. 시료는 5N의 순도를 갖는 Ge, Sb, Te 물질을 준비하고 조성비에 맞추어서 석영관에 진공 봉입한 후 용융-냉각법으로 벌크를 제작하였고 열증착 방법으로 Si 및 유리 기판위에 1000nm 두께로 박막을 제작하였다. UV-Vis-IR spectrophotometer를 사용하여 반사도와 투과도를 측정하였고 측정한 스펙트럼을 이용하여 Swanepoel method로 굴절률을 계산하였다. 본 연구진이 자체 개발한 계산툴에 실험값을 대입하였고 실험에 의해 얻은 투과도와 계산툴에 의해 얻은 투과도 스펙트럼을 비교하였다.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.49-55
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• 1996

Hydrogenated amorphous carbon(a-C:H) films were fabricated by the low-frequency (60Hz) glow discharge of the mixture of methane and hydrogen, and their electrical properties were investigated. We observed that a-C:H films show the persistent photoconductivity(PPC) by illumination of heat-filtered while light for a few seconds. The PPC was about 10 times larger than the annealed dark conductivity. The samples clearly showed metastable characteristics. With increasing illumination times from 1 to 100 min, the annealing activation energy of the PPC was about 0.39eV. The annealing temperature at which the PPC disappeared increasing from $100^{\circ}C$ to $130^{\circ}C$. Illumination longer than 80 min leads to the formation of ${\pi}$ defects and to the decrease of PPC. From these results, we tentatively propose that the states in the ${\pi}$ band act as deep trap centers generating the metastabilities.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.29-36
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• 1992

The fundamental research about the amorphous ferrite, which is expected as the important material for electronic and information imdustry in future, was carried out in this work. Because the ferromagnetic amorphous ferrites reported recently are very inferior in magnetic properties than the crystalline ferrites, the development of the more ferromagnetic amorphous ferrites is required. In order to obtain the fundamental data for the preparation of amorphous ferrites, the hand-made twin-roller quenching apparatus was used for rapid quenching. Investigation on amorphous ferrite in the system $CaO-Bi_{2}O_{3}-Fe_{2}O_{3}$ has been carried out in the composition of 10-50 mole% CaO, 10-50 mole% $Bi_{2}O_{3}$, 40-70 mole% $Fe_{2}O_{3}$. Large magnetization values were obtained near the composition of the mixture of $BiFeO_{3}$ and $CaFe_{4}O_{7}$. Especially, an amorphous ${(CaO)}_{20}{(Bi_{2}O_{3})_{15}{(Fe_{2}O_{3})}_{65}$ specimen has a magmetization value of about 21.84 emu/g at 0K(10 kOe). Fe $M\"{o}ssbauer$ absorption spectrum indicates that this specimen is compsed of two amorphous phases, antiferromagnetic phase($\alpha$-phase) and ferromagnetic phase($\beta$-phase). Crystallization of this amorphous ferrite was happened in steps-$550^{\circ}C$ and $775^{\circ}C$, then observed crystal phases were perovskite phase of $BiFeO_{3}$ and $Fe_{2}O_{3}$ phase.