• Title/Summary/Keyword: 비소 이온 주입

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In-situ Precipitation of Arsenic and Copper in Soil by Microbiological Sulfate Reduction (미생물학적 황산염 환원에 의한 토양 내 비소와 구리의 원위치 침전)

  • Jang, Hae-Young;Chon, Hyo-Taek;Lee, Jong-Un
    • Economic and Environmental Geology
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    • v.42 no.5
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    • pp.445-455
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    • 2009
  • Microbiological sulfate reduction is the transformation of sulfate to sulfide catalyzed by the activity of sulfate-reducing bacteria using sulfate as an electron acceptor. Low solubility of metal sulfides leads to precipitation of the sulfides in solution. The effects of microbiological sulfate reduction on in-situ precipitation of arsenic and copper were investigated for the heavy metal-contaminated soil around the Songcheon Au-Ag mine site. Total concentrations of As, Cu, and Pb were 1,311 mg/kg, 146 mg/kg, and 294 mg/kg, respectively, after aqua regia digestion. In batch-type experiments, indigenous sulfate-reducing bacteria rapidly decreased sulfate concentration and redox potential and led to substantial removal of dissolved As and Cu from solution. Optimal concentrations of carbon source and sulfate for effective microbial sulfate reduction were 0.2~0.5% (w/v) and 100~200 mg/L, respectively. More than 98% of injected As and Cu were removed in the effluents from both microbial and chemical columns designed for metal sulfides to be precipitated. However, after the injection of oxygen-rich solution, the microbial column showed the enhanced long-term stability of in-situ precipitated metals when compared with the chemical column which showed immediate increase in dissolved As and Cu due to oxidative dissolution of the sulfides. Black precipitates formed in the microbial column during the experiments and were identified as iron sulfide and copper sulfide. Arsenic was observed to be adsorbed on surface of iron sulfide precipitate.

Ultra shallow function Formation of Low Sheet Resistance Using by Laser Annealing (레이져 어닐링을 이용한 낮은 면저항의 극히 얕은 접합 형성)

  • 정은식;배지철;이용재
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2001.05a
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    • pp.349-352
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    • 2001
  • In this paper, novel device structure in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA) for ultra pn junction formation. Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20 nm for arsenic dosage (2$\times$10$^{14}$ $\textrm{cm}^2$), excimer laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm.

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A Study on Secondary Defects in Silicon after 2-step Annealing of the High Energy $^{75}AS^+$ Ion Implanted Silicon (고에너지비소 이온 주입후 2단계 열처리시 2차결함에 대한 연구)

  • 윤상현;곽계달
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.796-803
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    • 1998
  • Intrinsic and proximity gettering are popular processes to get higher cumulative production yield and usually adopt multi-step annealing and high energy ion implantation, respectively. In order to test the combined processed of these, high energy \ulcornerAs\ulcorner ion implantation and 2-step annealing process were adopted. After the ion implantation followed by 2-step annealing, the wafers were cleaved and etched with Wright etchant. The morphology of cross section on samples was inspected by FESEM. The concentration profile of As was measured by SRP. The location and type of secondary defects inspected by HRTEM were dependent on the 1st annealing temperatures. That is, a line of dislocation located at $1.5mutextrm{m}$ apart from the surface at $600^{\circ}C$ lst annealing was changed to some dislocation lines or loops nearby the surface at 100$0^{\circ}C$. The density of dislocation line was reduced but the size of the defects was enlarged as the temperature increased.

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Behavior of Oxidative Precipitation of High-Arsenic (III) Solution Utilizing Activated Carbon with Air Injection (공기와 활성탄 병용에 의한 용액 중 고농도 3가 비소의 산화-침전 거동 연구)

  • Kim, Rina;Kim, Gahee;Kim, Kwanho;You, Kwang-suk
    • Resources Recycling
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    • v.30 no.4
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    • pp.11-19
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    • 2021
  • Arsenic (As) oxidation followed by precipitation from a high-As(III)-containing leaching solution derived from a sulfidic ore was investigated in this study to remove aqueous As from the solution using activated carbon (AC) with air injection as an oxidant. To obtain the initial leaching solution, a domestic sulfidic ore was leached in a sulfuric acid solution at pH 1 and 50℃ for 95 h, and approximately 7 g/L of Fe and 3 g/L of As were leached out. To determine the effect of the oxidative reaction utilizing AC with air injection, the leaching solution was tested under the following five oxidative conditions at an initial pH of 1 and 90℃ for 72 h: air-only injection; air injection with 1, 5, and 10 w/v% of AC addition; and H2O2 addition. The tests in the presence of both air and AC revealed that the oxidation kinetics and As removal were improved by the reaction between the metallic species and the surface group formed on the AC surface. In addition, the greater the amount of AC added, the better was the reaction efficiency, removing 93-94% of As with more than 5 w/v% of AC addition. Finally, X-ray diffraction analysis confirmed that the precipitate formed from the oxidative reaction was scorodite (FeAsO4·2H2O).

Characteristics of Polysilicon Resistors with High Thermal Stability Fabricated by POCl$_{3}$ Doping and Arsenic Implantation (POCl$_{3}$ 도핑 및 비소 이온주입공정으로 제작한 높은 안정성을 갖는 다결정실리콘 저항소자 특성)

  • 이대우;노태문;구진근;남기수
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.7
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    • pp.56-62
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    • 1998
  • Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.

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Characteristics of manganese removal by ozonation: Effect of existing co-ion and optimum dosage (오존을 이용한 용존성 망간 제거 특성: 공존이온의 영향 및 최적주입량)

  • Kwak, Yeonwoo;Lee, Seulki;Lee, Yongsoo;Hong, Seongho
    • Journal of Korean Society of Water and Wastewater
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    • v.32 no.2
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    • pp.145-152
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    • 2018
  • This study is focused on manganese (Mn(II)) removal by ozonation in surface water. Instant ozone demand for the water was 0.5 mg/L in the study. When 0.5 mg/L of Mn(II) is existed in water, the optimum ozone concentration was 1.25 mg/L with reaction time 10 minutes to meet the drinking water regulation. The ozone concentration to meet the drinking water regulation was much higher than the stoichiometric concentration. The reaction of soluble manganese removal was so fast that the reaction time does not affect the removal dramatically. When Mn(II) is existed with Fe, the removal of Mn(II) was not affected by Fe ion. However As(V) is existed as co-ion the removal of Mn(II) was decreased by 10%. Adding ozone to surface water has limited effect to remove dissolved organic matter. When ozone is used as oxidant to remove Mn(II) in the water, the existing co-ion should be evaluated to determine optimum concentration.

Thermal characteristics of $W_{67}N_{33}$/GaAs structure (PECVD방법으로 형성한 $W_{67}N_{33}$/GaAs구조의 열적 특성)

  • Lee, Se-Jeong;Hong, Jong-Seong;Lee, Chang-U;Lee, Jong-Mu;Kim, Yong-Tae;Min, Seok-Gi
    • Korean Journal of Materials Research
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    • v.3 no.5
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    • pp.443-450
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    • 1993
  • Self-alignment gatc Schottky contact structure on Si- implanted GaAs was formed by plasma enhanced chemical vapor dcposirion. Tungsten nitride thin films (ahclut 1600$\AA$) \vcre dopositcd on GaAs at $350^{\circ}C$ in order to fahricarc GaAs 1Cs and ttwn rapidly annealed at $750^{\circ}C$ to $900^{\circ}C$. Thermal charac tcristics of PECVD)-$W_{67}N_{43}$/GaAs structure were investigated by X-ray diffraction, photolumintesccnce. and optical deep level transient specrroscopy. Results revealed that $W_{67}N_{33}$ gate was more thermally sta ble with GaAs substrate than W gate and Si atoms implanted In $W_{67}N_{33}$/GaAs structure became morr active than those In W/GaAs after annealing. I-V characteristics of $W_{67}N_{33}$/GaAs diod c exhibired a nearly ideal diode behavior. The termal stability of $W_{67}N_{33}$/GaAs diode was better than that of W/GaAs diode with the post annealing at temperatures from 800 to $900^{\circ}C$ for 20s without As overpressure.

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Photocatalytic Oxidation of Arsenite Using Goethite and UVC-Lamp (침철석과 UVC-Lamp를 이용한 아비산염의 광촉매 산화)

  • Jeon, Ji-Hun;Kim, Seong-Hee;Cho, Hyen-Goo;Kim, Soon-Oh
    • Economic and Environmental Geology
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    • v.50 no.3
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    • pp.215-224
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    • 2017
  • Arsenic (As) is known to be the most toxic element and frequently detected in groundwater environment. Inorganic As exists as arsenite [As(III)] and arsenate [As(V)] in reduced and oxidized environments, respectively. It has been reported that the toxicity of arsenite is much higher than that of arsenate and furthermore arsenite shows relatively higher mobility in aqueous environments. For this reason, there have been numerous researches on the process for oxidation of arsenite to arsenate to reduce the toxicity of arsenic. In particular, photooxidation has been considered to be simple, economical, and efficient to attain such goal. This study was conducted to evaluate the applicability of naturally-occurring goethite as a photocatalyst to substitute for $TiO_2$ which has been mostly used in the photooxidation processes so far. In addition, the effects of several factors on the overall performance of arsenite photocatalytic oxidation process were evaluated. The results show that the efficiency of the process was affected by total concentration of dissolved cations rather than by the kind of those cations and also the relatively higher pH conditions seemed to be more favorable to the process. In the case of coexistence of arsenite and arsenate, the removal tendency by adsorption onto goethite appeared to be different between arsenite and arsenate due to their different affinities with goethite, but any effect on the photocatalytic oxidation of arsenite was not observed. In terms of effect of humic acid on the process, it is likely that the higher concentration of humic acid reduced the overall performance of the arsenite photocatalytic oxidation as a result of competing interaction of activated oxygen species, such as hydroxyl and superoxide radicals, with arsenite and humic acid. In addition, it is revealed that the injection of oxygen gas improved the process because oxygen contributes to arsenite oxidation as an electron acceptor. Based on the results of the study, consequently, the photocatalytic oxidation of aqueous arsenite using goethite seems to be greatly feasible with the optimization of process.

Evaluation of Industrial Byproduct for the Adsorption of Arsenic (V) (재이용한 산업부산물에 의한 비소(V) 이온 흡착능 평가)

  • Park, Youn-Jong;Yang, Jae-Kyu;Choi, Sang-Il
    • Journal of Soil and Groundwater Environment
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    • v.12 no.4
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    • pp.78-85
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    • 2007
  • This study provides an attempt to evaluate sanding wastes, generated from a chemical company as a reused adsorbent. Organic impurities in the raw sanding wastes were removed by calcination at $550^{\circ}C$. Aluminum was a major inorganic composition in the raw sanding wastes and increased from 29.09% to 52.73% after calcination. Dissolved concentrations of heavy metals from the calcined sample were below 0.3 mg/L in a stability test at pH 2. From the pH-edge adsorption experiments with the calcined sanding wastes, As (V) was found to follow an anionic-type adsorption. Adsorption isotherm obtained with variation of the dosage of the calcined sanding wastes was better described by Freundlich equation than Langmuir one. Freundlich constants of K and 1/n were 4.244 and 0.316, respectively. The As (V) adsorption capacity of calcined sanding wastes estimated from Langmuir isotherm was 13.25 mg/g. From this study, the calcined sample was identified as a good reusable adsorbent in the view point of stability and adsorption capacity on As (V).

Self-purification Mechanisms in Natural Environments of Korea: I. A Preliminary Study on the Behavior of Organic/Inorganic Elements in Tidal Flats and Rice Fields (자연 정화작용 연구: I. 갯벌과 농지 상층수중 유 ${\cdot}$ 무기 원소의 거동에 관한 예비 연구)

  • Choi, Kang-Won;Cho, Yeong-Gil;Choi, Man-Sik;Lee, Bok-Ja;Hyun, Jung-Ho;Kang, Jeong-Won;Jung, Hoi-Soo
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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    • v.5 no.3
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    • pp.195-207
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    • 2000
  • Organic and inorganic characteristics including bacterial cell number, enzyme activity, nutrients, and heavy metals have been monitored in twelve acrylic experimental tanks for two weeks to estimate and compare self-purification capacities in two Korean wet-land environments, tidal flat and rice field, which are possibly different with the environments in other countries because of their own climatic conditions. FW tanks, filled with rice field soils and fresh water, consist of FW1&2 (with paddy), FW3&4 (without paddy), and FW5&6 (newly reclaimed, without paddy). SW tanks, filled with tidal flat sediments and salt water, are SW1&2 (with anoxic silty mud), SW3&4 (anoxic mud), and SW5&6 (suboxic mud). Contaminated solution, which is formulated with the salts of Cu, Cd, As, Cr, Pb, Hg, and glucose+glutamic acid, was spiked into the supernatent waters in the tanks. Nitrate concentrations in supernatent waters as well as bacterial cell numbers and enzyme activities of soils in the FW tanks (except FW5&6) are clearly higher than those in the SW tanks. Phosphate concentrations in the SW1 tank increase highly with time compared to those in the other SW tanks. Removal rates of Cu, Cd, and As in supematent waters of the FW5&6 tanks are most slow in the FW tanks, while the rates in SW1&2 are most fast in the SW tanks. The rate for Pb in the SW1&2 tanks is most fast in the SW tanks, and the rate for Hg in the FW5&6 tanks is most slow in the FW tanks. Cr concentrations decrease generally with time in the FW tanks. In the SW tanks, however, the Cr concentrations decrease rapidly at first, then increase, and then remain nearly constant. These results imply that labile organic materials are depleted in the FW5&6 tanks compared to the FW1&2 and FW3&4 tanks. Removal of Cu, Cd, As from the supernatent waters as well as slow removal rates of the elements (including Hg) are likely due to the combining of the elements with organic ligands on the suspended particles and subsequent removal to the bottom sediments. Fast removal rates of the metal ions (Cu, Cd, As) and rapid increase of phosphate concentrations in the SW1&2 tanks are possibly due to the relatively porous anoxic sediments in the SW1&2 tanks compared to those in the SW3&4 tanks, efficient supply of phosphate and hydrogen sulfide ions in pore wates to the upper water body, complexing of the metal ions with the sulfide ions, and subsequent removal to the bottom sediments. Organic materials on the particles and sulfide ions from the pore waters are the major factors constraining the behaviors of organic/inorganic elements in the supernatent waters of the experimental tanks. This study needs more consideration on more diverse organic and inorganic elements and experimental conditions such as tidal action, temperature variation, activities of benthic animals, etc.

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