• Title/Summary/Keyword: 비대칭 이중게이트

Search Result 43, Processing Time 0.024 seconds

High Isolation and Linearity MMIC SPDT Switch for Dual Band Wireless LAN Applications (이중대역 무선랜 응용을 위한 높은 격리도와 선형성을 갖는 MMIC SPDT 스위치)

  • Lee, Kang-Ho;Koo, Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.43 no.1 s.343
    • /
    • pp.143-148
    • /
    • 2006
  • This paper presents a high isolation and power-handling single-pole double-throw(SPDT) switch for dual band wireless LAN applications. The switch circuit has asymmetric topology which uses stacked-gate to have high power-handling and isolation for the Tx path. The proposed SPDT switch has been designed with optimum gate-width, bias, and number of stacked-gate FET. This SPDT switch has been implemented with $0.25{\mu}m$ GaAs pHEMT process which has Gmmax of 500mS/mm and fmax of 150GHz. The designed SPDT switch has the measured insertion loss of better than 0.9dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with PldB of about 23dBm for control voltage of -3/0V. The fabricated SPDT switch chip size is $1.8mm{\times}1.8mm$.

Design and Fabrication of a GaAs MESFET MMIC Transmitter for 2.4 GHz Wireless Local Loop Handset (2.4 GHz WLL 단말기용 GaAs MESFET MMIC 송신기 설계 및 제작)

  • 성진봉;홍성용;김민건;김해천;임종원;이재진
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.11 no.1
    • /
    • pp.84-92
    • /
    • 2000
  • A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

  • PDF

Analysis on Subthreshold Swing of Asymmetric Junctionless Double Gate MOSFET for Parameters for Gaussian Function (가우스 함수의 파라미터에 따른 비대칭형 무접합 이중 게이트 MOSFET의 문턱전압 이하 스윙 분석)

  • Jung, Hakkee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.35 no.3
    • /
    • pp.255-263
    • /
    • 2022
  • The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (Vfbf) and bottom gate (Vfbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson's equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as Vfbb-Vfbf increases when the projected range is near the top gate, and the SS decreases as Vfbb-Vfbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.