• Title/Summary/Keyword: 불활성기체

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Thermal Effusion of Implanted Inert Gas Ions from Si(100) (Si(100)에 주입된 불활성 기체 이온들의 방출 특성)

  • Jo Sam K.
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.73-80
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    • 2006
  • Thermally-driven effusion of inert gases out from Si(100), into which energetic $\~l keV\;He^+,\;Ne^+,\;A^r+,\;and\;Kr^+ ions$ had been implanted at a moderate substrate temperatures of $\~400 K$, was investigated by means of temperature-programmed desorption (TPD) mass spectrometry. While He effused out broadly over $500\~1,100 K$, Ne, Ar, and Kr effusion occurred sharply at 810, 860, and 875 K, respectively. Hydrogen adsorption/desorption analysis for the ion-treated Si(100) surfaces indicated minimal to severe damage by ions with increasing mass from He to Kr. Implications of these results in light of literature reports are discussed.