• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.84-90
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• 2005

The influence of plasma parameters on the growth of $In_{0.2}Ga_{0.8}N/GaN$ heterostructures has been investigated using plasma-assisted molecular beam epitaxy. Since plasma ejects plenty of energetic particles with different energy levels and flux density at various rf power levels, plasma modulated both growth rate and optical properties significantly. For instance, surface roughness and the emission spectrum of photoluminescence were degraded at low and high rf power. According to sharp interfaces between epitaxial films and strong peaks observed from photoluminescence spectra, our experimental setup presented optimal operation range of rf powers at around 400W. The phenomena could be explained by the presence of energetic particles modulating the rate of plasma stimulated desorption and surface diffusion, and energetic particles exceeding critical value resulted in the incorporation of defects at subsurface. The optimal rf power regime increased by 100W for $In_{0.2}Ga_{0.8}N/GaN$ growth in comparison with GaN. The effects of rf power were discussed in conjunction with kinetic processes being stimulated by energetic particles.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.83-83
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• 2011

본 연구에서는 p-type Si (100) 위에 분자선 에피택시 성장방법으로 ZnO 완충층이 삽입된 ZnO 박막을 성장시켰다. ZnO 완충층은 Zn 셀 셔터의 열림/닫힘을 반복하는 성장 멈춤법으로 성장되었다. Zn 셀 셔터의 열림 시간은 4분, 2분, 1분이며 닫힘 시간은 2분으로 동일하게 유지하였다. 이러한 과정은 각각 5, 10, 20회로 반복되었으며 ZnO 완충층을 성장한 후 ZnO 박막은 기존의 분자선 에피택시 방법으로 성장되었다. ZnO 박막의 구조적, 광학적 특성은 field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL)로 조사하였다. SEM 측정결과 성장 멈춤 횟수가 증가함에 따라 ZnO 박막의 표면은 섬(island) 구조에서 미로(maze) 구조로 변화하였고, XRD 측정결과 full-width at half-maximum (FWHM) 이 감소하고 결정립 크기(grain size)가 증가하였다. 그리고 PL 측정결과 성장 멈춤 횟수가 증가함에 따라 near-band-edge emission (NBE) 피크의 세기가 증가하였고 deep-level emission (DLE) 피크의 위치는 오렌지 발광에서 녹색 발광으로 청색편이(blue-shift)하였다.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.251-256
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• 2003

Indium aluminum arsenide(InAlAs) was grown by molecular beam epitaxy on (001) indium phosphide (InP) substrate and the effects of growth temperature on the properties of epitaxial layers were studied. In the temperature range of 370-$400 ^{\circ}C$, we observed that the surface morphology, optical quality and structural quality of InAlAs epilayers were improved as growth temperature increased. However, the InAlAs epilavers grown at $430 ^{\circ}C$ have the bad surface morphology and show the same trends as structural and epical quality. As a result of these measurements, it is suggested that the InAlAs epilayers of very good properties can be grown at $400 ^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.458-464
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• 2006

The construction and the performance test of an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system has been completed successfully. We have done domestic development and tried performance test for ultra high vacuum molecular beam epitaxy system. This system has reached pressure $2X10-^{10}$ Torr and the substrate has reached temperature $1,100^{\circ}C$. We have investigated into the characteristic of ZnSe/GaAs(001) by using scanning electron microscope (SEM), atomic force microscope (AFM), x-ray diffraction (XRD) and photolumi-nescence (PL).

• Korean Journal of Materials Research
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• v.7 no.12
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• pp.1041-1046
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• 1997

본 연구에서는 분자선 에피택시 방법으로 비대칭 AIAs/GaAs(001)이중 장벽, 삼중장벽구조를 성장한 수 이를 이용하여 2단자 소자를 제작하여 전기적 특성을 분석하였다. 에피층은 쌍결정 X-ray회절 분석과 단면투과 전자현미경을 이용하여 결정성 및 격자 정합성을 확인하였다. 전기적 성능을 보다 향상시키기 위해 n-GaAs에 대한 오믹 접촉등의 소자 제작 공정을 최적화하였다. 삼중장벽 구조를 이용하여 제작한 소자의 전기적 특성 연구 결과 두개의 주요 공진 터널링 전류 피크 사이에 X-valley에 의한 구조를 확인할 수 있었으며, 이중 장벽구조에 제2의 양자우물 구조를 첨가함으로써 낮은 전압위치에서 전류 피크가 향상하는 결과를 얻었다.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.365-370
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• 2010

The growth interruption effects on growth mode of the GaAs and AlGaAs epitaxial layers grown on GaAs substrate by molecular beam epitaxy were investigated. Growth process of the epitaxial layers as a function of the growth interruption time was observed by reflection high energy electron diffraction (RHEED). The growth interruption time was 0, 15, 30, 60 s. The GaAs/$Al_{0.3}Ga_{0.7}As$ multi quantum wells (MQWs) with different growth interruption time were grown and its properties were investigated. RHEED intensity oscillation and optical property of the MQWs were dependent on the growth interruption time. When the growth interruption time was 30 s, interface between the well and barrier layers became sharper.

• Patent21
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• s.71
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• pp.35-39
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• 2007

• The Magazine of the IEIE
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• v.10 no.5
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• pp.16-19
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• 1983

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.60-60
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• 1993

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.371-376
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• 2010

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy (MBE) using the two-step method. The Si(100) substrates were cleaned with three different surface cleaning methods of vacuum heating, As-beam exposure, and Ga-beam deposition at the substrate temperature of $800^{\circ}C$ in the MBE growth chamber. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and $1{\mu}m$, respectively. The surface structure and properties were investigated by reflection high-energy electron diffraction (RHEED), AFM (Atomic force microscope), DXRD (Double crystal x-ray diffraction), PL (Photoluminescence), and PR (Photoreflectance). From RHEED, the surface structure of GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition is ($2{\times}4$). The GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition has a high quality.