• Proceedings of the KIEE Conference
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• 2004.10a
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• pp.188-192
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• 2004

이 논문에서 정 전압형 PFC 전자식 안정기에 대하여 제안하였다. 제안하는 PFC 전자식 안정기는 고효율 승압형 컨버터와 기존의 하프브리지 인버터를 조합한 것이다. 제안된 PFC 전자식 안정기는 전압 분압기와 소프트 스위칭 기술을 사용하여 입력전류의 왜형과 입력전류의 고조파가 감소됨을 증명하였다. 형광램프에 대한 시뮬레이션결과는 이론적인 분석과 일치함을 나타내었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1096-1100
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• 2008

This report examines the variations on structural properties of $SnO_2$ thin films deposited by using thermal chemical vapor deposition techniques with different oxygen flow gas. TEM showed some of the interface to be atomically rough. The aspects of the boundary shape and growth behavior agree well with the theory of interface growth. The electron diffraction showed that the roughness was changed as the different oxygen flow gas increased. These measurement results suggested that the number of interface facet and abnormal grain growth were related oxygen flow gas.

• Transactions of the Korean Society of Automotive Engineers
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• v.6 no.1
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• pp.205-212
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• 1998

In this study, the effects of water vapor in inlet air on combustion efficiency, general performance, knock characteristics and emission gas concentration were investig- ated through the experiments of combustion and vibration analyses, emission gas analysis by changing water vapor quantity in inlet air with temperature and humidity auto control unit. With partial vapor pressure increase, the brake torque at wide open throttle status decreased and the average ignition delay angle increased, IMEP (indicated mean effective pressured using the integral and 3rd derivatives of filtered cylinder pressure as knock intensity, which matched well with the method of frequency power spectrum of block vibration signal. Water vapor in intake air had influence on the spark knock sensitivity. With the increase of water vapor content in intake air NOx emission was decreased and HC emission was increased.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.400-405
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• 1995

ZnO films have been grown easily with the conventional thermal evaporation method on SiO$\_$2/ coated Si wafers. Anhydrous zinc acetate has been used as evaporation source. Zinc-acetate was directly heated in the laboratory-made brass boat. Zinc-acetate was sublimed at the boat temperature of about 220.deg. C. The substrates were heated to 600.deg. C with home made tantalium heater. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. X-ray diffraction patterns showed all the films to be amorphous. The films deposited at high oxygen pressure exhibit higher resistivity than films at low pressure. Energy dispersive spectroscopy(EDS) and rutherford backscattering spectrometry(RBS) were conducted on the films to reveal the composition of the ZnO films.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2005.10a
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• pp.266-270
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• 2005

본 연구는 Ta, Nb, Zr, 및 희토류 등을 복합적으로 함유한 복합광을 대상으로 사염화탄소에 의한 염화반응을 알아보기 위한 기초연구로서 각 산화물의 염화반응 특성을 알아보고 이를 토대로 복합광의 염화반응을 비교하여 보았다. 실험결과 산화물 상태의 Nb, Ta 및 Zr은 비교적 낮은 온도에서 염화반응이 일어나고 염화물이 휘발됨을 알 수 있었다. 복합광을 반응 온도 $400^{\circ}C,\;CCl_4$ 분압 0.28 일때 반응시간이 10분에서 60분으로 변함에 따라 니오븀 및 탄탈륨은 $91%{\sim}99%$의 높은 회수율을 나타내었으나 지르코늄은 각각 16.5%에서 27.5%로 약간 증가하는 경향을 나타내었다. 희토류의 경우 세륨은 반응율이 71.7에서 73% 정도였고 란타늄은 51%에서 54% 정도의 반응율을 나타내었다.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.326-328
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• 1999

We investigated the effects of residual gas partial pressure on the property of a CeO$_2$ buffer layer on a textured Ni tape, where the buffer layer was deposited by e-beam evaporation. The oxygen partial pressure were varied from 10$^{-7}$ to 10$^{-4}$ Torr. we also changed the surface condition for the surface oxygenation. We'll describe the detail of the resultant textures of the buffer layers and effects of YBCO growth on them

• Journal of Chest Surgery
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• v.23 no.6
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• pp.1084-1089
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• 1990

Plasma protein concentration, plasma albumin concentration, hematocrit, and arterial blood gas tension were measured in 15 mongrel dogs undergoing heart transplantation with cardiopulmonary bypass. The hemodilution due to priming solution resulted in a 49% decrease in plasma protein concentration, a 57% decrease in plasma albumin concentration, a 46%a decrease in hematocrit. The measurements had returned to preperfusion values 1 hour after the end of cardiopulmonary bypass. The intraoperative changes in plasma protein and albumin concentration did not correlate with changes in alveolar-arterial oxygen tension gradients[D[A\ulcorner PO2]]. It is concluded that, in the absence of an increase in left atrial pressure, marked decrease in plasma protein concentration can be tolerated without the occurrence of pulmonary edema. And further study should be done to determine how to prepare an ideal priming solution.

• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.189-193
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• 1995

$YBa_2Cu_3O_{7-y}$ 박막을 c축 방향으로 성장시키는데 고압 스퍼터링 방법이 저압 스퍼터링 방법에 비해 효과적인 것으로 알려져 있다. 우리는 500mtorr의 고압 스퍼터링 방법을 사용하여 $YBa_2Cu_3O_{7-y}$ 박막을 $\alpha$축으로 성장시키는 연구를 수행하였다. 저압 스퍼터링 방법을 사용할 때보다 낮은 기판온도에 $\alpha$축 방향 성장이 이루어지며, 저압 스퍼터링 성장의 경우와는 달리 산소분압의 크기에 따라 성장 방향이 달라지지 않음을 발견하였다. 성장된 박막은 기대와 달리 매우 낮은 초전도 전이온도와 열등한 구조적 특성표면 특성을 보였다.

• Proceedings of the Membrane Society of Korea Conference
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• 1997.10a
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• pp.53-60
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• 1997

1. 서론 : 촉매막기술은 반응과 분리공정을 동시에 하나의 장치에서 수행할 수 있기 때문에 한 개의 공정을 줄일 수 있는 효과적인 에너지 절약형 기술이다. 생성물중의 적어도 하나가 선택적으로 막을 통해 투과되기 때문에 가역반응의 경우에는 비가역반응에 가까운 거동을 보이게 된다[1-5]. 본 연구는 12-텅스토인산($H_3PW_{12}O_{40}$)를 촉매로 사용하고 막반응시를 비활성촉매막반응기(IMRCF, Inert membrane reactor with catalyst in the feed side)형태, 막으로는 PSF(Polysulfone), PPO(Polyphenylene Oxide)를 사용하여 MTBE(Methyl tert-butyl ether)분해반응을 모사하였다. 막반응기에서 생성된 생성물을 선택적으로 분리해냄으로 인하여 전환율은 고정층보다 증가하였는데 반응온도가 증가할수록, 반응물의 분압은 낮을수록 증가하였다. 반응온도가 높아짐에 따라 막반응기에서의 전환율은 고정층반응에서 나타나는 전환율과의 차이가 줄어드는 것을 볼 수 있었다. 위와같은 결과에 따라서 MTBE 반응물의 분해로 생성되는Isobutene의 수율이 90$\circ$C 이상의 반응온도에서 촉매/반응물비에 대한 최적조건이 나타나는 것을 알 수 있었다.

• Journal of the Korean Ceramic Society
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• v.21 no.1
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• pp.51-59
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• 1984

In this paper mechanical properties of reaction-bonded silicon nitride are studied with the variation of initial nitrogen partial pressure. At 1, 25$0^{\circ}C$ the amount of nitridation and the nucleation of nitride increase linearly with the nitrogen partial pressure increase. After the nitridation is completed the density of nitride and modulus of rupture at room temperature are increased with the amount of nitridation. When the partial pressure of nitrogen is 0.5 atm the specimen show the optimum properties that is the highest density of nitride and modulus of rupture. Also the microstructure of $\alpha$-matte is deveoped very well at that pressure of nitrogen which contributes to the strength development of specimen. It is shown that with proper control of initial partial pressure of nitrogen high strength silicon nitride body can be manufactured for dynamic applications.