• Title/Summary/Keyword: 분극성

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A Review on Past Cases of Geophysical Explorations for Assessment of Slope Stability (사면 안정성 평가를 위한 물리탐사 적용 사례 분석)

  • Cho, Ahyun;Joung, Inseok;Jeong, Juyeon;Song, Seo Young;Nam, Myung Jin
    • Economic and Environmental Geology
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    • v.55 no.1
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    • pp.111-125
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    • 2022
  • Since landslide can cause huge damages to many facilities, close characterization of slopes is needed for appropriate reinforcements for the unstable ones in order to prevent the damages. Geophysical surveys, which can characterize a large area at a relatively low cost without disturbing slopes, have been widely employed for the assessment of slope stability in other countries. However, only conventional direct investigation methods are mainly used in Korea. In this paper, we analyzed various cases, which evaluated slope stabilities by characterizing slopes using geophysical exploration. First, we introduced changes in geophysical properties due to unstable media of slope like fracture location, fracture connectivity and distribution of groundwater level, and subsequently discussed the applicability of geophysical methods to the detection of the changes; the methods include electrical resistivity survey, seismic survey, self-potential survey, induced polarization survey and ground penetrating radar. Based on this description, we analyzed how geophysical surveys were performed on various slopes.

Preparation of Ferroelectric $\textrm{SrBi}_{2}\textrm{Ta}_{2}\textrm{O}_{9}$ Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition (플라즈마를 이용한 유기금속 화학증착법에 의한 강 유전체 $\textrm{SrBi}_{2}\textrm{Ta}_{2}\textrm{O}_{9}$ 박막의 제조)

  • Seong, Nak-Jin;Kim, Nam-Gyeong;Yun, Sun-Gil
    • Korean Journal of Materials Research
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    • v.7 no.2
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    • pp.107-113
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    • 1997
  • $SrBi_{2}Ta_{2}O_{9}(SBT)$ thin films wcre prepared on $Pt/Ti/SiO_{2}/Si$ suhsrrate by pL~snia-enhanced chemical vapor deposition. Sr and Ta huhhling temperatures were kept ,it $120^{\circ}C$ Iron1 X- ray tiiffriict!on. n~icrostruc~ure. and composjrional analysis of SH7' films, respectivels Hi I~ut~t~lmg tempcl.arure was varied SR'I' thin tilrns dcpositcd ar i3i buhbling temperature of $130^{\circ}C$ have dielccrric constanr of 150 anti dissipation factor of 0 02 at IOOkFic. I .eakagc wrrent density of films was ahour $1.0{\times}10^{-8}A/cm^2$ at 20kV/cm. 1.eakage current i11amcrc1istic.s of Sli'l' films nras c.ontrolled by I'oole Frcnkel emission Kenianent polariziit~on and mercivc field oi SR\ulcorner' films annealed at $550^{\circ}C$ were $9{\mu}C/cm^2$ and 70kV/cm, respectively.

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Electrical properties of PZN-PZT thick films formed by aerosol deposition process (에어로졸 증착법에 의해 제조된 PZN-PZT 후막의 전기적특성)

  • Tungalaltamir, Ochirkhuyag;Jang, Joo-Hee;Park, Yoon-Soo;Park, Dong-Soo;Park, Chan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.5
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    • pp.183-188
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    • 2020
  • Lead zinc niobate (PZN)-added lead zirconate titanate (PZT) thick films with thickness of 5~10 ㎛ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and to 40 %. The PZN-added PZT film showed poorer electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700℃. On the other hand, the PZN-added PZT film showed higher remanent polarization and dielectric constant values than pure PZT film when the films were coated on sapphire and annealed at 900℃. The ferroelectric and dielectric characteristics of 20 % PZN-added PZT films annealed at 900℃ were compared with the result values obtained from bulk ceramic specimen with same composition sintered at 1200℃. As annealing temperature increased, dielectric constant increased. These came from enhanced crystallization and grain growth by post heat treatment.

Design of a wideband cymbal transducer array (광대역 심벌 트랜스듀서 배열 설계)

  • Kim, Donghyun;Roh, Yongrae
    • The Journal of the Acoustical Society of Korea
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    • v.39 no.3
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    • pp.170-178
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    • 2020
  • Cymbal transducers are often used as an array rather than single because they have a high quality factor and low energy conversion efficiency. When used as an array, there occurs a big change in the frequency characteristics of the array due to the interaction between constituent transducers. In this study, we designed the structure of a cymbal transducer array to have ultra-wideband characteristics using this property. First, cymbal transducers with specific center frequencies were designed. Then, a 2×2 planar array was constructed with the designed transducers, where the cymbal transducers were arranged to have same or opposite polarization directions. For this structure, we analyzed the effect of the difference in the center frequency of and the spacing between the constituent transducers on the acoustical characteristics of the array. Based on the analysis, we designed the structure of the cymbal transducer array to have the widest possible bandwidth.

Characteristics of PLT Thin Films on MgO Substrates and Fabrication of Infrared Sensor (MgO 기판 위에 올린 PLT 박막의 특성과 적외선 센서의 제작)

  • Cho, Sung-Hyun;Jung, Jae-Mun;Lee, Jae-Gon;Kim, Ki-Wan;Hahm, Sung-Ho;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.6 no.3
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    • pp.188-193
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    • 1997
  • The lanthanum-modified lead titanate (PLT) thin films on (100) cleaved MgO single crystal substrate have been prepared by RF magnetron sputtering method using PbO-rich target with varing La contents. The substrate temperature, working pressure, $Ar/O_{2}$, and RF power density of PLT thin films were $580^{\circ}C$ 10mTorr, 10/1, and $1.7W/cm^{2}$, respectively. In these conditions, the c-axis growth and tetragonality of the PLT thin films decreased for addition of La content and the PLT thin films showed diffuse phase transition from high temperature XRD patterns. The infrared sensor was fabricated. The remanent polarization was above $1.71{\mu}C/cm^{2}$ and the pyroelectric voltage was above 500mV with 10:1 signal to noise ratio.

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Effect of the Pore Structure on the Anodic Property of SOFC (SOFC 음극의 기공구조가 음극특성에 미치는 영향)

  • 허장원;이동석;이종호;김재동;김주선;이해원;문주호
    • Journal of the Korean Ceramic Society
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    • v.39 no.1
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    • pp.86-91
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    • 2002
  • Solid Oxide Fuel Cells (SOFC) are of great interest of next generation energy conversion system due to their high energy efficiency and environmental friendliness. The basic SOFC unit consists of anode, cathode and solid electrolyte. Among these components, anode plays the most important role for the oxidation of fuel to generate electricity and also behaves as a substrate of the whole cell. It is normally requested that the anode materials should have the high electrical conductivity and gas permeability to reduce the polarization loss of the cell. In this study, the effect of pore former on the microstructure of anode substrate was investigated and thus on the electrical conductivity and the gas permeability. According to the results, microstructure and electrical conductivity of anode substrate were greatly influenced by the shape of pore former and especially by the anisotrpy of the pore former. The use of anisotropic pore former is supposed to deteriorate the cell performance by which the electrical conduction path is disconnected but also the effective gas diffusion path for the fuel is reduced.

The Characteristics of $PbTiO_{3}-PbZrO_{3}-Pb(Ni_{1/3}Nb_{2/3})O_{3}$ Piezoelectric Thin Film Made by Sol-Gel Method (Sol-Gel 법으로 제작한 $PbTiO_{3}-PbZrO_{3}-Pb(Ni_{1/3}Nb_{2/3})O_{3}$ 압전박막의 특성)

  • Yoon, Wha-Joong;Lim, Moo-Yeol;Koo, Kyung-Wan
    • Journal of Sensor Science and Technology
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    • v.4 no.4
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    • pp.75-80
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    • 1995
  • In order to fabricate the piezoelectric thin film of the PZT-PNN ternary compound, the metal alkoxides were used as starting materials. The electrical and crystalline properties of the thin film were evaluated. The X- RD study shows that the crystallization of the film is optimized at $550^{\circ}C$ of sintering temperature. According to the D-E hysterisis curve, the coercive field is 28.8 kV /cm, and the remanent polariztion is $18.3\;{\mu}C/cm^{2}$. The break down voltages of the thin films are $76.0\;{\sim}\;27.0\;MV/m$. When the sintering temperature is raised, the break down voltage is lowered. As a result of measuring the C-V characteristic curve of the ternary compound piezoelectric thin film, the relative dielectric constants are 406 for the composition (50:40:10), 1084 for the composition (50:30:20), 723 for the composition (45:35:20) and 316 for the composition (40:40:20).

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Studies on the Deformation in the Hysteresis Loop of $Pb(Zr,Ti)O_3$ Ferroelectric Thin Films ($Pb(Zr,Ti)O_3$ 강유전체 박막 이력곡선의 변형에 관한 연구)

  • Lee, Eun-Gu;Lee, Jong-Guk;Lee, Jae-Gap;Kim, Seon-Jae
    • Korean Journal of Materials Research
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    • v.10 no.5
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    • pp.360-363
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    • 2000
  • Deformation in the hysteresis loop of $Pb(Zr,Ti)O_3$ (PZT) thin films with various Zr/Ti ratios has been studied by varying the top electrode preparation method and the annealing temperature. Pt/PZT/Pt capacitors was found to be positively poled due to dc plasma potential generated during reactive ion etch (RIE) of Rt. Internal field is formed by space charges trapped at domain boundaries. Aging phenomenon such as constriction in the middle of the hysteresis loop was observed in the PZT film with top electrode deposited by sputtering. Top electrode annealing restores the hysteresis loop by removing the space charges. As Zr/Ti ratio decrease, voltage shift increases and an-nealing temperature at which internal field disappears also increases.

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Second-Order Nonlinear Optical Properties of Organically Modified Titania Thin Film (유기염료가 복합화된 타이타니아 박막재료의 이차비선형광학특성에 관한 연구)

  • Im, Seon-Jin;Gwak, Hyeon-Tae;Choe, Dong-Hun;Park, Su-Yeong;Kim, Nak-Jung
    • Korean Journal of Materials Research
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    • v.4 no.4
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    • pp.466-471
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    • 1994
  • The polymeric titania sol was prepared via partial hydrolysis of titanium isopropoxide and its characteristics were investigated. The effect of solvent, catalyst and water content on the sol stability was investigated. The shear viscosities of sol solution at different temperatures were measured to determine the gel time. Employing the spin coating technique, optically clear and transparent titanium oxide thin film was fabricated. Even after doped with second-order nonlinear optical(NL0) active monomers, the film quality was maintained very homogeneous. The film was corona-poled under 3~ 5kV at 50~$100^{\circ}C$ range. The electro-optic coefficient, $r_{33}$ was measured to be 1.5~5pm/V using the wavelength, 632.8nm from He-Ne laser.

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Homoepitaxial Growth on GaN Substrate Grown by HVPE (HVPE법에 의해 성장된 GaN 기판의 Homoepitaxial 성장)

  • Kim, Chong-Don;Kim, Young-Soo;Ko, Jung-Eun;Kwon, So-Young;Lee, Sung-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.14-14
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    • 2006
  • Homoepitaxial growth of GaN on n-type GaN substrates was carried out by hydride vapor phase epitaxy (HVPE) method. This enables us to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch. As a result, the two opposite crystal surfaces have been found to possess low dislocation density. The surface polarity of the homoepitaxially grown GaN was confirmed by both etching of the surface and conversion beam electron diffraction(CBED). The surface morphology and the photoluminescencemeasurement indicated that the surface properties of N-polar face of the homoepitaxlally grown GaN are quite different from the initial N-polar face of the heteroepitaxially grown GaN substrate Also, both surfaces of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD) and photoluminescence measurement.

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