• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.4
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• pp.385-391
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• 1992

In this paper, the electrical conduction phenomena of oriented polypropylene film were studied. Especially, as for the range of negative characteristics, it is observed that as increasing ambient temperature, the characteristics are shifted gradually towards the low intensity side of applied field with the decreasing width of the range as well as the fact that the current oscillation takes place at the both transition points of the characteristics. Finally, it is also suggestive that the oscillation characteristics observed on the negative resistance range of the biaxially oriented specimen show the possibility to utilize it as active element materials.

• Proceedings of the KIEE Conference
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• 1984.07a
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• pp.175-176
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• 1984

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.4
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• pp.88-95
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• 2015

This paper presents a new analysis of RF negative resistance (RFNR) circuits, known as a negative resistance generator. For accurate equation analysis of RFNR, this study examined the effects of the gate resistance and the source parasitic capacitance of the transistor. In addition, the input admittance of the conventional equation was calculated by looking into the source-terminal of the transistor, whereas that of the proposed equation was calculated by examining the gate-terminal of the transistor. The proposed equation analysis is more accurate than that of the conventional analysis, especially for higher frequency range. This paper verify the accuracy of the proposed analysis at high frequency range using the simulation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.3
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• pp.25-31
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• 1977

Fe V spinels were prepared by sintering the well-ground stoichiometric mixtures of Fe O and V O at 1,10$0^{\circ}C$ under H -CO atmosphere. The activation energy for electrical conduction decreases with increasing amount of iron. The tendency of activation energy depending on the amount of iron contained clarifies that the electrical condction of the spinel is mainly due to electron hopping between Fe and Fe ions at B sites. In the experiment for negative resistance characteristics, the threshold voltage (Vth) for the samples is related to ambient temperature, thickness and raising rate of applied voltage. Vth decreases as temperature increases while Vth increases linearly with thickness and Vth increases linearly with the raising rate of applied voltage in semi-logarithmic scale. These results lead to a conclusion that current paths mainly formed by thermal breakdown are ascribed to the negative resistance phenomena. Applying this property, these vanadium iron spinels may be used for switching elements.

• Proceedings of the Speleological Society Conference
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• 2005.11a
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• pp.69-77
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• 2005

비 직선적 정(+) 저항온도계수 특성을 갖은 PTC thermistor눈 전이온도(큐리점) 부근에서 온도변화에 대하여 극히 큰 저항 값의 변화를 나타내는 산화물계반도체 저항기(또는 발열체)로써, 일반적으로 반도체의 온도-저항 특성과 같이 상온영역에서 온도의 상승과 함께 부성저항 특성을 나타내어 감소하다가, 온도가 점점 증가하여 큐리점 부근에 도달하면 저항이 급격히 증가하는 독특한 특성을 갖는다. Perovskite 구조의 BaTiO$_3$를 주성분으로 미량의 Dopant를 첨가하여 도전성을 갖게 한 N형 반도체의 일종으로, 저항-온도 특성, 전류-전압 특성, 전류감쇄 특성 등을 이용하여 과전류 보호회로, 히터, TV 소자회로(degausser) 모터기동회로, 온도센서, 정온발열기기 등으로 널리 사용된다. 본 연구는 큐리점 부근의 급격한 저항변화 현상과 결정입계의 전위장벽 형성 및 그에 따른 정온발열 기능의 상관성으로부터 정온발열 탐사기능 온열부츠 제작 용 PTC 부픔소재의 응용성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.240-241
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• 2005

비 직선적 정(+) 저항온도계수 특성을 갖는 PTC thermistor는 전이온도(큐리점) 부근에서 온도변화에 대하여 극히 큰 저항 값의 변화를 나타내는 산화물계반도체 저항기(또는 발열체)로써, 일반적으로 반도체의 온도-저항 특성과 같이 상온영역에서 온도의 상승과 함께 부성저항 특성을 나타내다가 온도가 점점 증가하여 큐리점 부근에 도달하면 저항이 급격히 증가하는 독특한 특성을 갖는다. Perovskite 구조의 $BaTiO_3$를 주성분으로 미량의 Dopant를 첨가하여 도전성을 갖게 한 N형 반도체의 일종으로 저항-온도 특성 전류-전압 특성, 전류감쇄 특성 등을 이용하여 과전류 보호회로, 히터, TV 소자회로(degausser), 모터기동회로, 온도센서, 정온발열기기 등으로 널리 사용된다. 본 연구는 큐리점 부근의 급격한 저항변화 현상과 결정입계의 전위장벽 형성 및 그에 따른 정온발열 기능의 상관성으로부터 그 응용성을 조사하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.4
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• pp.10-16
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• 2021

This paper proposes a model that considers the parity-time symmetric structure as a state detection circuit for sensor applications using a stretchable inductor. In particular, to obtain a more practical computer simulation result, the stretchable inductor model was applied to this study model by referring to previously reported experimental results. The resistance component and phase component were controlled through the negative differential resistance circuit used in this study. In addition, the imbalance of the circuit caused by a change in the characteristics of the stretchable inductor could be compensated for using a negative differential resistance circuit. In particular, an analysis of the frequency characteristics of the sensor driving circuit of the parity-time symmetric structure proposed in this study confirmed that the Q-factor could be increased up to 20 times compared to the conventional resonant circuit.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.11
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• pp.1215-1220
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• 2014

In this paper, a local oscillator for X-band radar system is designed and fabricated with GaAs MESFET. GaAs MESFET is good for microwave oscillators because of very low noise figure and high electron mobility. Oscillator design methods in this paper are used the characteristic of negative resistance of active component and impedance matching technique without RF resonator. So, oscillator is designed in compact size because space of RF resonator is reduced and can be applied MMIC technique. Designed oscillator has characteristic of the output power of 2.30 dBm and center frequency of 10.545GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1104-1112
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• 2013

This paper presents a wideband Colpitts voltage controlled oscillator(VCO) with nanosecond startup time and a center frequency of 8.35 GHz for a new bubble-type motion detector that has a bubble-layer detection zone at the specific distance from itself. The VCO circuit consists of two parts; one is a negative resistance part with a HEMT device and Colpitts feedback structure and the other is a resonator part with a varactor diode and shorted shunt microstrip line. The shorted shunt microstrip line and series capacitor are utilized to compensate for the input reactance of the packaged HEMT that changes from capacitive values to inductive values at 8.1 GHz due to parasitic package inductance. By tuning the feedback capacitors which determine negative resistance values, this paper also investigates startup time improvement with the negative resistance variation and tuning bandwidth improvement with the reactance slope variation of the negative resistance part. The VCO measurement shows the tuning bandwidth of 2.3 GHz(28 %), the output power of 4.1~7.5 dBm and the startup time of less than 2 nsec.

• Proceedings of the KAIS Fall Conference
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• 2011.12b
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• pp.652-655
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• 2011

본 논문에서는 Atmel사의 AVR 칩인 ATmega128을 이용한 AC 파워서플라이의 제어를 제안한다. 제안한 AC 파워서플라이는 풀브리지 구조를 이용하며, 그 부하로는 냉음극형 형광램프(램프)를 적용하였다. 특별히 램프는 부성저항 특성을 가진 부하이기 때문에 제안한 파워서플라이는 안정기 기능을 포함하며, AVR 칩을 이용하여 구조가 간단한 장점을 가진다. 제안한 파워서플라이의 동작특성은 실험결과로 보인다.