• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.354-361
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• 2012

The organic memory device was made by the plasma polymerization method which was not the dry process but the wet process. The memory device consist of the styrene and MMA monomer as the insulating layer, MMA monomer as the tunneling layer and Au thin film as the memory layer which was fabricated by thermal evaporation method. The I-V characteristics of fabricated memory device got the hysteresis voltage of 27 V at 40/-40 V double sweep measuring conditions. At this time, the optimized structure was 7 nm of Au thin film as floating gate, 400 nm of styrene thin film as insulating layer and 30 nm of MMA thin film as tunneling layer. Therefore we got the charge trapping characteristics by the hysteresis voltage. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make devices by using styrene thin film rather than Au thin film.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.72-81
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• 2011

In this paper, we proposed and designed a novel floating point converter which supports single and double precisions of IEEE754 standard. The proposed convertor supports conversions between floating point number single/double precision and signed fixed point number(32bits/64bits) as well as conversions between signed integer(32bits/64bits) and floating point number single/double precision and conversions between floating point number single and double precisions. We defined a new internal format to convert various input types into one type so that overflow checking could be conducted easily according to range of output types. The internal format is similar to the extended format of floating point double precision defined in IEEE754 2008 standard. This standard specifies that minimum exponent bit-width of the extended format of floating point double precision is 15bits, but 11bits are enough to implement the proposed converting unit. Also, we optimized rounding stage of the convertor unit so that we could make it possible to operate rounding and represent correct negative numbers using an incrementer instead an adder. We designed single cycle data path and 5 cycles data path. After describing the HDL model for two data paths of the convertor, we synthesized them with TSMC 180nm technology library using Synopsys design compiler. Cell area of synthesis result occupies 12,886 gates(2 input NAND gate), and maximum operating frequency is 411MHz.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.11
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• pp.31-38
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• 1998

This paper deals with CBS(Cycle Base Simulator) design of a 32 bit floating point DSP(Digital Signal Processor). The CBS has been developed for TMS320C30 compatible DSP and will be used to confirm the architecture, functions of sub-blocks, and control signals of the chip before the detailed logic design starts with VHDL. The outputs from CBS are used as important references at gate level design step because they give us control signals, output values of important blocks, values from internal buses and registers at each pipeline step, which are not available from the commercial simulator of DSP. In addition to core functions, it has various interfaces for efficient execution and convenient result display, CBS is verified through comparison with results from the commercial simulator for many application algorithms and its simulation speed is as fast as several tenth of that of logic simulation with VHDL. CBS in this work is for a specific DSP, but the concept may be applicable to other VLSI design.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1891-1898
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• 2013

To efficiently execute 3D graphic APIs, such as OpenGL and Direct3D, special purpose arithmetic unit(SFU) which supports floating-point sine, cosine, reciprocal, inverse square root, base-two exponential, and logarithmic operations is designed. The SFU uses second order minimax approximation method and lookup table method to satisfy both error less than 2 ulp(unit in the last place) and high speed operation. The designed circuit has about 2.3-ns delay time under 65nm CMOS standard cell library and consists of about 23,300 gates. Due to its maximum performance of 400 MFLOPS and high accuracy, it can be efficiently applicable to mobile 3D graphics application.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.127-133
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• 1996

In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.10C
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• pp.963-972
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• 2002

An 8192-point pipelined FFT/IFFT processor core is designed, which can be used in multi-carrier modulation systems such as DUf-based VDSL modem and OFDM-based DVB system. In order to improve the signal-to-quantization-noise ratio (SQNR) of FFT/IFFT results, two-step convergent block floating-point (TS_CBFP) scaling is employed. Since the proposed TS_CBFP scaling does not require additional buffer memory, it reduces memory as much as about 80% when compared with conventional CBFP methods, resulting in area-and power-efficient implementation. The SQNR of about 60-㏈ is achieved with 10-bit input, 14-bit internal data and twiddle factors, and 16-bit output. The core synthesized using 0.25-$\mu\textrm{m}$ CMOS library has about 76,300 gates, 390K bits RAM, and twiddle factor ROM of 39K bits. Simulation results show that it can safely operate up to 50-㎒ clock frequency at 2.5-V supply, resulting that a 8192-point FFT/IFFT can be computed every 164-${\mu}\textrm{s}$. It was verified by Xilinx FPGA implementation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.3
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• pp.563-569
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• 2007

As the mobile communication and the semiconductor technology is improved continuously, mobile contents such as the multimedia service and the 2D/3D graphics which require high level graphics are serviced recently. Mobile chips should consume small die area and low power. In this paper, we design a truncated floating-point multiplier that is useful for the 2D/3D vector graphics in mobile devices. The truncated multiplier is based on the radix-4 Booth's encoding algorithm and a truncation algorithm is used to achieve small area and low power. The average percent error of the multiplier is as small as 0.00003% and neglectable for mobile applications. The synthesis result using 0.35um CMOS cell library shows that the number of gates for the truncated multiplier is only 33.8 percent of the conventional radix-4 Booth's multiplier.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.131-137
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• 2013

The thin insulator films for organic memory device were made by the plasma polymerization method using the styrene monomer which was not the wet process but the dry process. For the formation of stable plasma, we make an effort for controlling the monomer with bubbler and circulator system. The thickness of plasma polymerized styrene insulator layer was 430 nm, the thickness of the Au memory layer was 7 nm thickness of plasma polymerized styrene tunneling layer was 30, 60 nm, the thickness of pentacene active layer was 40 nm, the thickness of source and drain electrodes were 50 nm. The I-V characteristics of fabricated memory device got the hysteresis voltage of 45 V at 40/-40 V double sweep measuring conditions. If it compared with the results of previous paper which was the organic memory with the plasma polymerized MMA insulation thin film, this result was greater than 18 V, the improving ratio is 60%. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make the organic memory device with plasma polymerized styrene as the memory thin film.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.895-898
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• 2005

This paper describes a design of LNS-based divider and square-root circuits which are key arithmetic units in graphic processor and digital signal processor. To achive area-efficient and low-power that is an essential consideration for mobile environment, a fixed-point format of 16.16 is adopted instead of conventional floating-point format. The designed divider and square-root units consist of binary-to-logarithm converter, subtractor, logarithm-to-binary converter. The binary to logarithm converter is designed using combinational logic based on six regions approximation method. As a result, gate count reduction is obtained when compared with conventional lookup approack. The designed units is 3,130 gate count and 1,280 gate count. To minimize average percent error 3.8% and 4.2%. error compensation method is employed.

• Journal of IKEEE
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• v.25 no.4
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• pp.762-765
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• 2021

In this paper, an automotive ECU (electronic control unit) with Kalman filter accelerator is designed and implemented. RISC-V is exploited as a processor core. Accelerator for Kalman filter matrix operation, CAN (controller area network) controller for in-vehicle network, and LIN (local interconnect network) controller are designed and embedded. Kalman filter operation consists of time update process and measurement update process. Current state variable and its error covariance are estimated in time update process. Final values are corrected from input measurement data and Kalman gain in measurement update process. Usually floating-point multiplication is exploited in software implementation, but fixed-point multiplier considering accuracy analysis is exploited in this paper to reduce hardware area. In 28nm silicon fabrication, its operating frequency, area, and gate counts are 100MHz, 0.37mm², and 760k gates, respectively.