• Journal of Ocean Engineering and Technology
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• v.8 no.1
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• pp.62-70
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• 1994

In order to estimate the detection range of a active SONAR system, the SONAR equation is commonly used. In this paper, an algorithm to calculate detection range in active SONAR system as function of SONAR depth and target depth is presented. For given SONAR parameters and environment, the transmission loss and background level are found, signal excess is computed. Using log-normal distribution, signal excess is converted to detection probability at each range. Then, the detection range is obtained by integrating the detection probability as function of range for each depth. The proposed algorithm have been applied to the case of omni-directional source with center frequency 30Hz for summer and winter sound profiles. It is found that the optimal search depth is the source depth since the detection range increase at source depth where the signal excess is maximized.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2001.05a
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• pp.166-171
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• 2001

A digital seismic data acquisition and processing system using a PC has been developed in order to replace the analog data acquisition system of shallow marine seismic survey. An A/D converter that has 12bits of resolution and 225KHz of conversion rate was ued to acquire data, and a data acquisition software was developed as a Windows program which provides convenience of use. Raw data acquired at field has been saved to the hard-disk simultaneously. The signal to noise ratio, vertical and horizontal resolution could be improved by a digital data processing of the raw data. The digital processing of the raw data includss gain recovery, filtering, deconvolution, and muting. With the prediction deconvolution algorithm multiple reflections appearing on the shallow marine seismic section could be removed successfully.

• Composites Research
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• v.17 no.4
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• pp.32-39
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• 2004

Among many fiber optic sensors, FBG sensors are being studied more actively than any other sensor due to good multiplexing capabilities. Recently, the application fields of FBG sensors are mainly focused on the composite materials through embedding rather than attaching on the surface. However, there are many limitations on the embedding FBG sensors into composite materials because of the birefringence effects which is induced when FBG sensors are not embedded parallel to the reinforcing fiber. In this study, the fabrication method of FBG sensors with various grating length that are easy to fabricate with good multiplexing capabilities and more stable from the birefringence effects are investigated. The signal characteristics of the FBG sensors are also verified through the cure monitoring of 2 kinds of composite materials.

• 한국기계연구소 소보
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• s.10
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• pp.11-20
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• 1983

Photoelasticity is an experimental technique for stress and strain analysis that is particularly useful for members having complicated geometry, complicated loading conditions, or both. The principle and engineering applications of photoelastic stress analysis are briefly reviewed. Experimental stress analysis with Reflection Polariscope at KIMM Structural Mechanics Laboratory was applied to the following practices: Stress analysis of the crosshead of the structural fatigue testing machine; Experimental safety verification of domestic excavator.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.315-315
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• 2010

결정질 실리콘을 포함하는 태양전지의 광전효율은 표면에 입사되는 태양광의 반사를 제외하면 흡수된 광자에 의해 생성되는 전자-정공쌍의 상대적인 비율인 내부양자효율에 의존하게 된다. 실제 생성된 전자-정공쌍은 기판재료의 결정상태와 전기광학적 물성 등에 의해 일부가 재결합되어 2차적인 광자의 생성이나 열로서 작용하고 최종적으로 전자와 정공이 완전히 분리되고 전극에 포집되어 실질적인 유효전류로 작용한다. 16% 이상의 고효율 결정질 실리콘 태양전지양산이 요구되고 있는 현실에서 광전효율 개선 위해 가장 우선적으로 고려되어야 할 변수는 입력 태양광스펙트럼에 대한 결정질 실리콘 표면반사율을 최소화하여 광흡수를 극대화하는 것이라 할 수 있다. 이의 해결을 위하여 대기와 실리콘표면 사이의 굴절률차이가 크면 클수록 태양광스펙트럼에 대한 결정질 실리콘의 광반사는 증가하기 때문에 상대적으로 낮은 굴절률의 $SiO_x$나 $SiN_x$와 같은 반사방지막을 광입력 실리콘표면에 증착하여 광반사율 저감공정을 적용하고 있다. 이와 더불어 결정질 실리콘표면을 화학적으로 혹은 플라즈마이온으로 50-100nm 직경의 바늘형 피라미드형상으로 texturing 함으로 광자들의 다중반사 등에 기인하는 광흡수율의 증가를 기대할 수 있기 때문에 태양전지효율 개선에 긍정적인 영향을 미치는 것으로 이해된다. 본 실험에서도 고효율 다결정 실리콘 태양전지 양산공정에 적용 가능한 ICP-RIE기반 결정질 실리콘표면에 대한 texturing 공정기술을 연구하였다. Double Langmuir 플라즈마 진단시스템(DLP2000)을 적용하여 사용한 $SF_6$와 $O_2$ 개스유량과 챔버압력, 플라즈마 파워에 따른 이온밀도, 전자온도, 포화이온전류밀도, 플라즈마포텐셜의 공간분포를 모니터링하였고 texturing이 완료된 시료에 대하여 A1.5G 표준태양광스펙트럼의 300-1100nm 파장대역에서 반사율을 측정하여 그 변화를 관찰하였다. 본 연구에서 얻어진 결과를 간략히 정리하면 Si texturing에 가장 적합한 플라즈마파워는 100W, $SF_6/O_2$ 혼합비는 18:22, 챔버압력은 30mtorr 등이고 이에 상응하는 플라즈마의 이온밀도는 $2{\sim}3{\times}10^8\;ions/cm^3$, 전자온도는 14~15eV, 포화전류밀도는 $0.014{\sim}0.015mA/cm^2$, 플라즈마포텐셜은 38~39V 범위 등이었다. 현재까지 얻어진 최소 평균반사율은 14.2% 였으며 최적의 texturing패턴 플라즈마공정 조건은 이온에 의한 Si표면원자들의 스퍼터링과 화학반응에 의한 증착이 교차하는 플라즈마 에너지 및 밀도 상태인 것으로 해석된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.283-283
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• 2010

17~18% 대역의 고효율 결정질실리콘 태양전지를 양산하기 위하여 국내외에서 다양한 연구개발이 수행되고 있으며 국내 다결정실리콘 태양전지 양산에서도 새로운 구조와 개념에 입각한 공정기술과 관련 장비의 국산화에 집중적인 투자를 진행하고 있다. 주지하는 바와 같이, 태양전지의 광전효율은 표면에 입사되는 태양광의 반사를 제외하면 흡수된 광자에 의해 생성되는 전자-정공쌍의 상대적인 비율인 내부양자효율에 의존하게 된다. 실제 생성된 전자-정공쌍은 기판재료의 결정상태와 전기광학적 물성 등에 의해 일부가 재결합되어 2차적인 광자의 생성이나 열로서 작용하고 최종적으로 전자와 정공이 완전히 분리되고 전극에 포집되어 실질적인 유효전류로 작용한다. 16% 이상의 고효율 결정질 실리콘 태양전지 양산이 요구되고 있는 현실에서 광전효율 개선 위해 가장 우선적으로 고려되어야 할 변수는 입력 태양광스펙트럼에 대한 결정질 실리콘 표면반사율을 최소화하여 광흡수를 극대화하는 것이라 할 수 있다. 현재까지 다결정 실리콘 표면을 화학적으로 혹은 플라즈마이온으로 50-100nm 직경의 바늘형 피라미드형상으로 texturing 함으로 단파장대역에서 광반사율의 감소를 기대할 수 있기 때문에 결정질실리콘 태양전지효율 개선에 긍정적인 영향을 미치는 것으로 알려져 있다. 고효율 다결정실리콘 태양전지 양산공정에 적용하기 위해 마스크를 사용하지 않는, RIE기반 건식 저반사율 결정질실리콘 표면 texturing 패턴연구를 수행하였다. 마스크없이 표면 texturing이 완료된 시료들에 대하여 A1.5G 표준태양광스펙트럼의 300-1100nm 파장대역에서 반사율과 minority carrier들의 life time 분포를 측정하고 검토하여 공정조건을 최적화 하였다. 저반사율의 건식 결정질실리콘 표면 texturing에 가장 적합한 플라즈마파워는 100W 내외로 낮았고 $SF_6/O_2$ 혼합비율은 0.8~0.9 범위엿다. 본 연구에서 확인된 최적의 texturing을 위한 플라즈마공정 조건은 이온에 의한 Si표면원자들의 스퍼터링과 화학반응에 의한 증착이 교차하는 상태로서 확인된 최저 평균반사율은 ~14% 내외였고 p-형 결정질실리콘 표면 texturing 패턴과 minority carrier의 life time 상관는 단결정이 16uS대역에서 14uS대역으로 감소하는 반면에서 다결정은 1.6uS대역에서 1.7uS대역으로 오히려 미세한 증가를 보여 다결정 웨이퍼생산과정에서 발생하는 saw-damage 제거의 긍정적 효과와 texturing공정의 표면 결함발생에 의한 부정적 효과가 상쇄되어 큰 변화를 보이지 않는 것으로 해석된다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.6
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• pp.63-70
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• 2012

This paper discussed on the directive gain improvement method of the U-type ultra wide-band(UWB) planar patch antenna model with CPW feeding. For directive gain improvement, the U-type printed patch antenna model with CPW feeding is reconstructed as a microstrip structure by adding a reflection plane with aperture slot. The reflection coefficient of the reconstructed antenna is less than -6.5 dB(VSWR < 3.3) to the characteristic impedance of $50.08{\Omega}$ and showed the directive radiation patterns with the directive gain of 7.5 dBi ~ 10.1 dBi, the front-back ratio of 17.8 dB ~ 28.7 dB and the range of -3dB radiation angle over ${\pm}30^{\circ}$ to the main beam direction of ${\theta}=0^{\circ}$.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.225-232
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• 2011

Reactive ion etching (RIE) technique for maskless surface texturing of mc-silicon solar wafers has been applied and succeed in fabricating a grass-like black-silicon with an average reflectance of $4{\pm}1%$ in a wavelength range of 300~1,200 nm. In order to investigate the optimized texturing conditions for mass production of high quantum efficiency solar cell Surface characteristics such as the spatial distribution of average reflectance, micrscopic surface morphology and minority carrier lifetime were monitored for samples from saw-damaged $15.6{\times}15.6\;cm^2$ bare wafer to key-processed wafers as well as the mc-Si solar cells. We observed that RIE textured wafers reveal lower average reflectance along from center to edges by 1% and referred the origin to the non-uniform surface structures with a depth of 2 times deeper and half-maximum width of 3 times. Samples with anti-reflection coating after forming emitter layer also revealed longer minority carrier lifetime by 40% for the edge compared to wafer center due to size effects. As results, mc-Si solar cells with RIE-textured surface also revealed higher efficiency by 2% and better external quantum efficiency by 15% for edge positions with higher height.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.47-51
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• 1997

A Cr:LiSAF laser pumped by semiconductor lasers was constructed. The pumping laser was a high-power semiconductor laser (SDL 7432-H1) of wavelength 674 nm and maximum power of 500 mW. The laser crystal was a Cr:LiSAF of plano-Brewster shape with 3% Cr3+ion concentration and 3 mm in length. The plane facet of the crystal was coated to get the maximum transmittance of pupmping laser and maximu reflection over the 800 - 880 nm bandwidth. V-shaped resonator was used to compensate the astigmatism induced by the crystal. The output power of the Cr:LiSAF laser was 19.4 mW at the pumping power of 290 mW. The wavelength was tuned by a steep dive-angled birefringent filter from 840 nm to 880 nm and the characteristics of the filter were agreed well with a theory.

• Korean Journal of Human Ecology
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• v.19 no.6
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• pp.1053-1062
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• 2010

To assist the further development of hight-visibility clothing this study compared the visibility and subjective wear sensation of commercial protective vests with retro-reflecting materials or LEDs. Nine subjects compared high-visibility vests to evaluate how easy they were to see when exposed to the headlight of a car at night, and the subjects assessed the wear sensation of the vests also. The intensity and visibility of five different colored LEDs assembled on the five substrates separately were also evaluated to select the suitable LED color for night protective clothing. The intensity of illumination was measured by an illuminometer, and the visibility was evaluated by 11 participants both in a dark room and in front of a car outdoors at night. Results showed, the most effective LEDs were high intensity LEDs which shift blinking red and white were most effective. However, excessively high intensity of illumination could decrease the working efficiency. In subjective wear evaluation, the most favorable vest had a front opening, were adjustable at the sides, and had an electric power switch on the front of the vest.