• Journal of The Korean Dental Society of Anesthesiology
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• v.7 no.1
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• pp.22-26
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• 2007

상악과 하악이 선천적으로 붙어서 태어나는 선천성 유합증은 드문 선천성 기형으로 단순히 점막이 붙은 점막유합증에서 악골이 붙은 골유합증까지 다양하게 나타난다. 이중 상악골과 하악골의 골자체가 붙는 골유합증은 아주 드물어서 현재까지 26증례만 보고되고 있는데, 보고된 대부분의 증례는 편측에만 발생하는 불완전형으로 알려져 있다. 7세 된 여아환자가 인디아의 GSR 병원에 입이 벌어지지 않는다는 주소로 내원하였는데 환아의 턱은 완전히 움직이지 않았으며, 2-3 mm 정도 벌어지는 앞니부위에서는 2.5 cm 폭경의 3.0 mm 두께의 단단한 치조점막이 관찰되었다. 전기메스로 전방부의 부착성 섬유밴드를 잘라준 후 즉각적인 개구정도는 16 mm 정도까지 가능하여 구강으로의 기관삽관이 가능하였다. 삽관후 양쪽 후방부 협측점막의 두꺼운 밴드들을 모두 제거하여 개구량을 33 mm까지 증진시킨 후 수술을 종결하였다. 환아의 보호자에게 거즈 블록과 설압자를 이용하여 개구 연습을 능동적으로 시키도록 강조하여 교육하였으며 술후 16개월 경과시까지 특별한 합병증이나 개구량 감소는 관찰되지 않았다. 독립적으로 발생한 선천성 치조점막 유합증 환자에서 비정상적으로 커져있는 과두와 설골이 관찰되었는데, 설-하악 구조의 비정상적인 발육에 기인하여 지속적인 비정상적 운동으로 인한 이차적인 치은과 협점막의 섬유성 부착이 생긴 것으로 추측되었다. 이에 마취과와의 효율적인 협진으로 기관절개술 등의 부가적인 마취방법 없이 효과적으로 치료할 수 있었다.

• Journal of Fashion Business
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• v.10 no.4
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• pp.70-77
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• 2006

The purpose of this study is to evaluate the differences of visual image by variations in the location and width of the waist band of the one-piece dress. The stimuli are 24 samples: 8 variations of the location of the waist band and 3 variations of the width of the waist band. The data has been obtained from 50 fashion design majors. The data has analyzed by Factor Analysis, Anova, Scheff's Test and the MCA method. The results of the study are as follows. According to the result of factor analysis of the visual image based on the changes in the location and width of waist bands, three factors were identified- attractiveness, elegance and practicality. Among them, attractiveness was found to be the most important. The visual image was evaluated positively when waist bands were positioned above the natural waist line and negatively when waist bands were positioned below the natural waist line regardless of their width. In addition, the visual image based on the width of waist bands for one-piece dress was the most positive when the width was 4.5cm. No significant difference was observed in the visual image according to band width when the waist bands were positioned below the natural waist line. The interaction of visual image according to the location and width of waist bands for one-piece dress did not appear. As the main effect, significant differences were observed in all of the three factors according to the location of waist bands, but only two factors excluding elegance showed some difference according to the width of waist bands. When multiple classification analysis was applied to the factors without interaction, the location of waist bands appeared to have more significant effect on visual image than the width of waist bands.

• Journal of Fashion Business
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• v.10 no.4
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• pp.55-69
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• 2006

The purpose of this study is to evaluate the differences of visual effects by variations in the location and width of the waist band of one-piece dress. The stimuli are 24 samples: 8 variations of the location of the waist band and 3 variations of the width of the waist band. The data has been obtained from 50 fashion design majors. The data has analyzed by Factor Analysis, Anova, Scheffe's Test and the MCA method. The results of the study are as follows: According to the result of factor analysis of the visual effects based on the changes in the location and width of waist bands for one-piece dress, four factors were identified - verticality of whole-body, horizontality of upper-body, curves of lower-body and shape of breast. Whole-body verticality and upper-body horizontality were found to be the most important factor among them. In all of the four factors of the visual effects, significant differences were observed according to the location of the waist bands for one-piece dress. The visual effects were evaluated positively when the waist bands were positioned above the natural waist line and negatively when the waist bands were positioned below the natural waist line. In addition, significant differences were observed in the visual effects according to the width of waist bands when the waist bands were positioned above the natural waist line, and visual effects were better when the band width was 3.5cm and 4.5cm than the others. The interaction of the visual effect showed significant differences in horizontality of upper-body, curves of lower-body and shape of breast.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.222-222
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• 2010

III-V반도체 태양전지는 다양한 에너지 밴드갭을 만들 수 있으며 다중접합 태양전지의 경우 흡수 전류가 커져 효율이 증가한다. 태양전지의 효율의 증가는 태양광 발전시스템의 발전 단가를 낮추는 중요한 요인이다. 우리는 효율이 높은 III-V 태양전지를 제작하기 위해 일차적으로 Ge기판 위에 GaAs를 성장하고자 한다. Ge기판과 GaAs의 격자상수는 0.07%차이로 거의 일치하나 물질의 열팽창계수가 다르고 비극성인 Ge기판 위에 극성인 GaAs를 성장 시 위상불일치(Anti Phase Domain) 나타난다. 위상불일치 현상을 줄이기 위해 성장 시 온도와 V/III비율, 성장두께 등을 달리하여 성장한다. 표면의 상태가 좋아질수록 위상불일치 현상이 작으며 단일성장 보다 두 단계 과정으로 성장 했을 때 표면의 상태가 더 좋은 결과를 바탕으로[1], 20nm 이하로 얇게 seed층을 성장하고 그 위에 두꺼운 버퍼층을 성장하는 두 단계로 진행하였다. seed층의 성장온도는 $400{\sim}550^{\circ}C$, V/III 비율을 3.5~30으로 다양하게 바꿔가면서 표면의 상태를 비교하였다. 이때 버퍼층의 성장 온도와 V/III 비율은 $680^{\circ}C$, 192으로 일정하게 유지하였다. 표면은 SEM과 AFM을 통해 분석하였으며 결정질의 상태는 XRD 장비(Panalytical사)로 분석하고 광학적 특성은 LTPL(Accent Optical Technologies사)로 측정하였다. 실험의 결과는 seed층의 온도가 낮고 V/III 비율이 낮으며 성장률이 높았을 때 표면상태가 좋은 반면 버퍼층은 온도가 높고 V/III 비율이 높으며 성장률이 낮을 때 표면상태가 좋았다. seed층을 $450^{\circ}C$온도에서 V/III 비율이 3.5이고 성장률이 버퍼층에 비교하여 크게 하여 성장 했을 때 표면 거칠기가 3.75nm로 작아 표면의 상태가 좋음을 확인할 수 있었다. 두 단계 성장 시 표면의 상태는 seed층의 조건에 따라 결정됨을 알 수 있었다. 표면상태가 좋았을 때 결정상태 역시 좋았으며 성장률이 바뀜에 따라 반치폭이 42~45 arcsec의 값을 나타내었다. 광학적 특성은 10K에서 1.1512eV 밴드갭 에너지를 가지고 있어 양질의 GaAs가 성장됨을 알 수 있다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.1-6
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• 2000

Utilizing impurity free vacancy diffusion (IFVD) method, area selective intermixing of InGaAs/InGaAsP multi-quantum well (MQW) structure was done. After this, wavelength division demultiplexing waveguide type photodetectoers was integrated and measured. It showed large blue shift in bandgap due to intermixing of MQW. Photodetectors are based on typical p-i-n structure and devices having large and small bandgap areas line up linearly. Width of waveguide and length of each photodetector are 20 and 250 ${\mu}m$, respectively, TE/TM polarized light from tunable laser was butt-coupled to the photodetector and spectral response was measured. Photodetectors can demultiplexing 1480 and 1550 nm wavelength.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.174.1-174.1
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• 2013

최근에 우수한 광학적 특성과 높은 화학적 안정성을 갖는 적황색 형광체 개발에 많은 노력이 경주되고 있다. 본 연구에서는 고상반응법을 사용하여 모체 결정 $YNbO_4$에 $Eu^{3+}$와 $Dy^{3+}$이온의 농도를 각각 체계적으로 치환 고용하여 발광 효율이 높은 적색과 황색 형광체를 제조하였다. 특히, $Eu^{3+}$와 $Dy^{3+}$이온의 농도를 달리하여 합성한 형광체 분말의 결정구조, 표면형상, 흡광과 발광 스펙트럼을 비교 분석하여 최적의 이온 농도를 조사하였다. 합성된 형광체 분말의 회절상은 $Eu^{3+}$와 $Dy^{3+}$이온의 함량비에 관계없이 모든 형광체 분말 시료는 약 $28,6^{\circ}$ 에서 최대값을 갖는 (021)면에서 발생하였고, 형광체 분말은 JCPDS #72-2077에 제시된 회절상과 일치하는 단사정계 결정 구조임을 확인 하였다. $Dy^{3+}$이온의 함량비가 0.01 mol에서 주 회절 피크의 세기는 최대이었으며, 함량비가 더욱 증가함에 따라 회절 피크의 세기는 점점 감소하였다. 이에 반하여, $Eu^{3+}$가 도핑된 형광체는 함량비가 0.15 mol일때 최대 회절피크가 관측되었다. $Dy^{3+}$이온이 도핑된 $YNbO_4$ 형광체의 경우에 두 종류의 흡광 스펙트럼이 관측되었다. 첫째는 약 267 nm를 피크로 하여 230~300 nm 영역에 걸쳐 폭넓게 분포하는 흡광 스펙트럼이고, 두 번째는 약 356, 393, 456 nm에 피크를 갖는 상대적으로 세기가 약하고 밴드폭이 좁은 흡광 스펙트럼이 관측되었다. $Eu^{3+}$이온이 도핑된 형광체 분말의 주 흡광 스펙트럼은 약 270 nm에 피크를 갖는 폭넓게 분포하는 전하전달 밴드이었다. $YNbO_4$ 형광체 분말의 발광 스펙트럼은 $Eu^{3+}$이온이 도핑된 경우에 620 nm에 강한 세기를 갖는 적색 발광이 관측되었고, $Dy^{3+}$이온이 도핑된 경우에는 580 nm에 최대 발광세기를 갖는 황색 발광 스펙트럼이 나타났다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.8
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• pp.636-645
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• 2017

A scanning radar is exploited widely such as for ground surveillance, disaster rescue, and etc. However, the range resolution is limited by transmitted bandwidth and cross-range resolution is limited by beam width. In this paper, we propose a method for super-resolution radar imaging. If the distribution of reflectivity is sparse, the distribution is called sparse signal. That is, the problem could be formulated as compressive sensing problem. In this paper, 2D super-resolution radar image is generated via reweighted ${\ell}_1-Minimization$. In the simulation results, we compared the images obtained by the proposed method with those of the conventional Orthogonal Matching Pursuit(OMP) and Synthetic Aperture Radar(SAR).

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.5
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• pp.155-160
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• 2021

In this paper, we investigated the aptness of embroidered textile dipole antenna as a wearable antenna. We designed an 2.45GHz ISM band embroidered textile dipole antenna on polyester textile. We investigated its characteristics depends on 3 variables, thickness of textile(ttextile), distance between textile and surface of body(gbody) and conductance of surface of body(𝜎body). Thickness of textile(ttextile) was affecting on the antenna resonance frequency(fo). As the conductance of surface of body(𝜎body) was increased the antenna resonance frequency(fo) and the antenna gain were increased slightly. The increment of the distance between textile and surface of body(gbody) caused relatively large increment of the antenna resonance frequency(fo) and the antenna gain. From the results, in the case of designing an embroidered textile dipole antenna as a wearable antenna we should consider carefully the two variables, distance between textile and surface of body(gbody) and thickness of textile(ttextile). Due to its large variation, the distance between textile and surface of body(gbody) may be a technical barrier in designing embroidered textile dipole antenna.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.199-204
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• 2000

In this study, the ZnS nanosized thin films that could be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their structural and optical properties were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). When the growth temperature was $75^{\circ}C$, the surface morphology and the grain size uniformity were the best. The energy band gaps of samples were determined from the optical transmittance valued, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS, demonstrating that the quantum size effect of SGT grown ZnS is remarkable. Photoluminescence (PL) peaks were observed at the positions corresponding to the lower energy than that to energy band gap, illustrating that the surface states were induced by the ultra-fineness of grains in ZnS films. Particularly, for the first time, it is reported for the SGT grown ZnS that the PL peaks were shifted depending on the grain size.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1213-1218
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• 2013

In this study, Ga-doped ZnO (GZO) thin films were fabricated on transparent sapphire substrate by RF magnetron sputtering method and then investigated the effect of various substrate temperature on the electrical, optical properties and characteristic of crystallization of the GZO thin films. The electrical property indicated that the lowest resistivity ($4.18{\times}10^{-4}{\Omega}cm$), the highest carrier concentration ($6.77{\times}10^{20}cm^{-3}$) and Hall mobility ($22cm^2/Vs$) were obtained in the GZO thin film fabricated at $300^{\circ}C$. And for this condition, the highest c-axis orientation and (002) diffraction peak which exhibits a FWHM of $0.34^{\circ}$ were obtained. From the results of AFM measurements, it is known that the highest crystallinity is observed at $300^{\circ}C$. The transmittance spectrum in the visible range was approximately 80 % regardless of substrate temperature. The optical band-gap showed the blue-shift as increasing the substrate temperature to $300^{\circ}C$, and they are all larger than the band gap of bulk ZnO (3.3 eV). It can be explained by the Burstein-Moss effect.