• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.560-565
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• 2008

$(Pb_{0.98}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ (PLZT) thin films with $TiO_2$ buffer layers were deposited on Pt/Ti/$SiO_2$/Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of $TiO_2$ buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of $TiO_2$ layers, thereby reaching their maximum at $600^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.8 no.4
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• pp.181-185
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• 2005

Lithium cobalt oxide thin film cathode, having thickness of $2.9{\mu}m$ with area of $4cm^2$, was deposited on platinum patterned alumina substrate by radio frequency magnetron sputtering. Li/Co molar ratio, which is an important factor for battery performance, was measured as a function of argon working pressure and applied R.F. power. Constant current charge and discharge performances were characterized with high rate discharge and cycling behavior. Using AC impedance analysis, internal resistance of the thin film battery was measured and simulated by proposed equivalent circuit model.

• Journal of the Korean Electrochemical Society
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• v.6 no.2
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• pp.113-118
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• 2003

Processible polyaniline (PAM) dispersions consisting of polyaniline micro-particles, cyclohexanone, and a polymeric surfactant were prepared in a micro-milling machine with various mixing conditions. The electrochemical properties of the dispersion film coated on Pt electrode were investigated by cyclic voltammetry (CV). The electrochemistry of the PAM dispersion coatings was basically similar to a pure PAM coating based on the results of CV. The results of polarization measurements and open circuit potential measurements carried out in $3\;wt.\%$ NaCI solution showed increase in corrosion potential when the PANI dispersion coatings applied on steel surface. Variation of open circuit potential $(OCP,\;V_{OC})$ of the dispersion coating/steel electrodes was observed, which differed with milling conditions. The results demonstrated practical use of the conducting polymer dispersion as a coating material for corrosion prevention of steel.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.284-290
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• 2004

In this paper, two types of thin nim bulk acoustic resonator(TFBAR) ladder filters are desisted and fabricated to analyze the effects of on-wafer inductor integration. To suppress the overmode phenomenon a 1 $\mu\textrm{m}$ thick air-gap is fabricated under the TFBAR and aluminum nitride is used for piezoelectric material, while platinum is employed for the top and bottom electrodes. The Tx filter in a duplexer, which usually has a steeper skirt characteristics o the right side of the passband, is designed with four serial and two shunt resonators, namely, a 4/2 stage. Similarly, the Rx filter is devised with a 3/4 stage to create a mirrored image of the Tx filter passband characteristics. Fabricated on-wafer spiral inductors with underpass reveals the Q factor of 5～9 at 2 ㎓. Inductor integrated filters have approximately 10 to 12 ㏈ out-of-band rejection improvement, when compared to the original filters.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.289-297
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• 2001

Highly-porous $SnO_2$thin films were prepared for recognizing and detecting of the inflammable gases, like butane, propane, LPG, carbon monoxide. To obtain sensing films, Sn, Pt/Sn, Au/Sn, and Pt,Au/Sn films were deposited employing a thermal evaporator for Sn film and a sputter for novel metals of Pt or/and Au. These films were annealed for 2 h at $700^{\circ}C$ to form $SnO_2$-based thin films. The films showed the tetragonal structure and also exhibited many defects and porosity, which could give high sensitivity to thin films. The thin films showed high sensitivity and reproductivity to the tested gases(butane, propane, LPG, and carbon monoxide) to even to low gas concentrations in range of workplace environmental standards. Especially, Pt/$SnO_2$film showed the highest sensitivity to butane, LPG, and carbon monoxide. And pure $SnO_2$ film manifested the highest sensitivity to propane. By using the sensing patterns from the films, we could reliably recognize the kinds and the quantities of the tested inflammable gases within the range of the threshold limit values(TLV) and the lower explosion limit(LEL) through the principal component analysis(PCA).

• Korean Journal of Materials Research
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• v.6 no.2
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• pp.204-209
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• 1996

각종 전자부품에 이용되는 백금막의 밀착력과 응집화 현상에 대해 연구하였다. 온도저항계수(TCR)의 열화 없이 밀착력을 향상 시키기 위해서 AI, Si의 산화물을 adhesion promoting layer로 이용한 결과 매우 우수한 밀착력과 TCR을 보였다. 질소분위기 600-90$0^{\circ}C$의 온도범위에서 행한 열처리를 통해 응집화현상을 관찰한 결과 응집화는 기판거칠기에 따라 다른 양상을 보였다. Si3N4등의 기판거칠기가 작은 adhesion promoting layer를 이용한 시편의 경우 고온인 90$0^{\circ}C$에서 응집화 현상이 발생되었다. 표면거칠기가 큰 AI-Si 산화물을 adhesion promoting layer로 이용한 시편의 경우 비교적 저온인 $600^{\circ}C$에서 응집화 현상이 발생했으며 80$0^{\circ}C$이상의 열처리의 경우 중앙응집체와 응집체고갈지역이 형성되는 현상을 나타내었다.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.770-772
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• 1998

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and high etch slope was observed and the selectivity to oxide increased without decreasing of the etch rate. And the reasons for this phenomenon was investigated by XPS(x-ray photoelectron spectroscopy) surface analysis and plasma characteristic.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.171-176
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• 1994

The spin-casted PLZT(9/65/35) thin films through polymeric sol-gel process were prepared on Pt substrate. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 35$0^{\circ}C$ and $700^{\circ}C$. The composite structure mixed together with large grains called "rosette" and surrounding small grains were observed on the films annealed over $600^{\circ}C$. Pyrochlore phase was completely changed to perovskite phase above $600^{\circ}C$ with the increase of annealing temperature. Dielectric constant (k) was larger with the increase of film thickness and annealing temperature. from the measurements of dielectric constant as a function of measuring temperature, it was also observed that Curie temperature was shifted to higher temperature with the increase of film thickness and annealing temperature. The pyroelectric coefficient(P) of 10 times coated film annealed at $700^{\circ}C$ was 65 $\mu$C/$\textrm{cm}^2$.K.$.K.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1294-1296
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• 1998

Platinum thin films which hardly form volatile compounds with any reactive gas at normal process temperature was etched in Inductively Coupled Plasma (ICP) using Ar/HBr/$Cl_2$ gases. It is observed that the etch rate of platinum is reduced as increasing of HBr/$Cl_2$ gas mixing ratio when Ar gas ratio is fixed. However, we obtain good etching profile of platinum films without unwanted residues in 90% Ar/5% HBr/5% $Cl_2$ gas mixing ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.255-255
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• 2010

Metal-Insulator-Metal 구조의 $Al_2O_3$ ReRAM 소자를 플라스틱 기판 위에 제작하였다. $Al_2O_3$ 박막은 원자층 증착 방법으로 $150^{\circ}C$의 저온 공정에서 15nm 두께로 증착하였으며, 하부와 상부의 전극으로는 DC 스퍼터링 방법으로 증착된 백금전극을 이용하였다. 플라스틱 기판위에 제작된 $Al_2O_3$ ReRAM 소자는 unipolar 메모리 특성을 보였다.