• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.139-142
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• 2000

In this paper, we designed a Self-Oscillating mixer(SOM) for Microwave Transceiver. Implemention of SOM shows the output power of 4.33dBm at 10.750Hz and the phase-noise of -102dBc/Hz at 100KHZ offset frequency, Applying the input frequency band 11.7GHz∼12.9GHz, The designed SOM If frequency is 950MHz∼2150MHz and its conversion gain is 6dB in the If band. We convinced that SOM is applied to a digital transceiver down-converter

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.62-66
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• 2010

In this article, a oscillator at X-band with a double H-shape metamaterial resonator (DHMR) based on high-Q is proposed with metamaterial structure to improve Ihe phase noise and output power. The proposed oscillator is required low phase noise and high output power for the high performance frequency synthesizer. DHMR is designed to be high-Q at resonance frequency through strong coupling of E-field. This character makes phase noise excellent. The oscillator using DHMR is oscillated in X-band so as to apply frequency synthesizer of radar systems. The output power is 4.33 dBm and the phase noise is -108 dBc/Hz at 100 kHz offset of carrier frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.9
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• pp.2081-2086
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• 2015

The temperature sensor using ring oscillator is designed by 0.18㎛ CMOS process and the supply voltage is 1.5volts. The temperature sensor is designed by using temperature-independent and temperature-dependent ring oscillators and the output frequency of temperature-independent ring oscillator is constant with temperature and the output frequency of temperature-dependent ring oscillator decreases with increasing temperature. To convert the temperature to a digital value the output signal of temperature-independent ring oscillator is used for the clock signal and the output signal of temperature-dependent ring oscillator is used for the enable signal of counter. From HSPICE simulation results, the temperature error is less than form -0.7℃ to 1.0℃ when the operating temperature is varied from -20℃ to 70℃.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.717-718
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• 2013

The output frequency of VCO(Voltage-Controlled Oscillator) with input frequency is changed if CMOS channel length and width are changed. In this paper, the electrical characteristics of VCO circuit is used as a part of FLL circuit are simulated with CMOS channel width. And the method is introduced to improve the reliability characteristics of VCO with channel width variation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.6
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• pp.833-842
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• 1998

In this paper, a K-band oscillator which is composed of a hair-pin resonator, a GaAs MESFET, and a frequency doubler, is suggested, implemented by HMIC(Hybrid Microwave Integrated Circuits) form, and characterized for its microwave performance. A $\lambda_g$/4 open stub is used in frequency doubler to suppress the fundamental frequency of 9 GHz which is the output of the hair-pin resonator oscillator and output matching network is optimized for its second harmonic freuency of 18 HGz. For the oscillator, the output power of -0.83 dBm, the fundamental frequency suppression of -23 dBc, and phase noise of -86 dBc/Hz at 18.20 GHz are obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1108-1111
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• 2015

In this paper, a ${\times}49$ frequency multiplier based on a ring oscillator and a multi-push multiplier is presented. The proposed ${\times}49$ frequency multiplier consists of two ${\times}7$ frequency multipliers and these multiplier is connected by injection-locking technique. Each ${\times}7$ frequency multiplier consists of a ring oscillator with 14-phase output signal and 7-push frequency multiplier requiring 14-phase input. The proposed ${\times}49$ frequency multiplier provides 2.78~2.83 GHz output signal with 56.7~57.7 MHz input signal. This operation frequency is defined that the output power difference between the carrier and the spur is above 10 dB. The proposed chip consumes 13.93 mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.1
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• pp.83-89
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• 2010

In this paper, we propose a new varactor coupled line structure and design the VCO using the proposed structure. The proposed coupled line structure removes the reflected signals from the varactor diode using an added $\lambda$/4 transmission line. The frequency synthesizers are designed using the PLL technique at Ku-band. The synthesizer using the proposed coupled structure has 38 MHz frequency tuning range and -97 dBc/Hz phase noise characteristic at 100 KHz offset frequency. The measured results show improved tuning range as well as the improved phase noise characteristics compared to the conventional designs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.299-306
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• 2016

In this paper, a vital sign sensor based on impedance variation of resonator is proposed to detect the respiration and heartbeat signals within near-field range as a function of the separation distance between resonator and subject. The sensor consists of an oscillator with a built-in planar type patch resonator, a diplexer for only pass the second harmonic frequency, amplifier, SAW filter, and RF detector. The cardiac activity of a subject such as respiration and heartbeat causes the variation of the oscillation frequency corresponding impedance variation of the resonator within near-field range. The combination of the second harmonic oscillation frequency deviation and the superior skirt frequency of the SAW filter enables the proposed sensor to extend twice detection range. The experimental results reveal that the proposed sensor placed 40 mm away from a subject can reliably detect respiration and heartbeat signals.

• Journal of Advanced Navigation Technology
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• v.6 no.1
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• pp.52-62
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated. The Push-Push oscillator for suppressing fundamental frequency 10 GHz and enhancing 20 GHz has been designed and realized in microstrip configuration on 20 mil thick RT-Duroid(${\varepsilon}_r$=2.52) teflon substrate. Two different types of power combiners, T-junction and Wilkinson, have been considered. Whenever one type of the combiners has been adopted for the output circuit, output power, phase noise and fundamental frequency suppression characteristics of the oscillator have been measured. When the Wilkinson power combiner was used, a maximum output power of 5.67 dBm, a phase noise of -105.5 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -29.33 dBc have been measured. When the T-junction power combiner was used, a maximum output power of -1.17 dBm, a phase noise of -102.2 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -17.84 dBc have been measured.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.6
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• pp.48-55
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• 2001

This paper presents a 1.8 GHz CMOS frequency synthesizer with high-speed on-chip pseudo 2-stage ring VCO. We introduce and analysis the conditions in which the ring VCO can oscillate. For high speed operation, we propose the pseudo 2-stage ring VCO that eliminates dummy loads. It can operate up to 1.87 GHz with 0.6 m CMOS process, which shows 21.3% improvement aginst the conventional 4-stage ring VCO in the aspect of the speed. When the frequency synthsizer with the psedo 2-stage ring VCO is locked at 1.85GHz, the jitter measured to 24 psec. The proposed VCO and the frequency synthesizer are directly applicable to high speed clocky synhtesizers.