• Applied Chemistry for Engineering
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• v.28 no.2
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• pp.245-251
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• 2017

In this study, ZnO, which is widely known as a non $TiO_2$ photocatalyst, was synthesized using coprecipitation method and Ag was added in order to improve the catalytic performance. The physicochemical characteristics of the synthesized ZnO and Ag/ZnO particles were checked using X-ray diffraction (XRD), UV-visible spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), photoluminescence (PL), and photocurrent measurements. The performance of catalysts was tested by $H_2$ production using the photolysis of $H_2O$ with MeOH. By adding Ag which plays a role as an electron capture on the ZnO catalyst, the performance increased due to the recombination of excited electrons and holes. In particular, $8.60{\mu}mol\;g^{-1}$ $H_2$ was produced after 10 h reaction over the 0.50 mol% Ag/ZnO.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.709-714
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• 2003

Eu doped $Y_2$ $O_3$ nanoparticles were prepared with the solvothermal synthesis using the ethyleneglycol solvent at 20$0^{\circ}C$ for 3-5 h and then annealed in air at 1000-140$0^{\circ}C$ for 2-4 h. The X-ray diffraction pattern of annealed crystals at 100$0^{\circ}C$ for 2 h could be indexed as pure cubic cell of $Y_2$ $O_3$ phase with lattice parameters a=10.5856 $\AA$ which is very close to the reported data (JCPDS Card File, 41-1105 a=10.6041 $\AA$). Average size of prepared phosphor particles have about 100 nm, which were spherical morphology. The phosphor particle sizes decreased and the emission intensity increased at the annealing temperature. Though PL spectrum analysis, the 3% Eu doped $Y_{2-x}$ $O_3$:E $u_{x}$ $^{3+}$(x=0.06) phosphor showed the excitation spectrum at 250 nm wavelength and the maximum emission spectrum at 611 nm wavelength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.298-303
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• 2012

$Y_{1-x}VO_4:Eu_x^{3+}$ red phosphors were synthesized with changing the mol ratios of $Eu^{3+}$ ions by using the solid-state reaction method. The crystalline structure of phosphors was found to be a tetragonal system with the maximum diffraction intensity at $25.02^{\circ}$. The grain particles showed the truncated hexagonal patterns with a very homogeneous size distribution at 0.05 mol of $Eu^{3+}$ ion. The excitation spectra of the phosphor ceramics were composed of a broad band centered at 303 nm and weak narrow multilines peaked in the range of 360-420 nm. The dominant emission spectrum was the strong red emission centered at 619 nm due to the $^5D_0{\rightarrow}^7F_2$ electric dipole transition. The experimental results suggest that the optimum doping mol ratio of $Eu^{3+}$ ions for preparing the red phosphors is 0.10 mol with the asymmetry ratio of 5.21.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.50-55
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• 2014

It was firstly found in 1st group element. Recently, it has been reported on the improvement of efficiency of the OLEDs by introducing thin layer of some carbonate materials of alkali metal. In order to improve the efficiency of OLEDs which is one of the next generation displays, we have studied the electrical characteristics of the device depending on the thickness ratio of the hole-injection layer to the electron-injection layer. Teflon-AF was used as the hole-injection material, and alkali-metal carbonates of $Li_2CO_3$ were used as the electron-injection materials. To obtain a proper thickness ratio, we manufactured. Four types of devices with the thickness ratio of HIL to EIL were made to be 1 : 4, 2 : 3, 3 : 2, and 4 : 1. The results of electrical and optical properties showed that the device with the thickness ratio of 4 : 1 is the most excellent result. In addition, to prepare a four-layer device by inserting the ${\alpha}$-NPD is a hole transporting material was compared with three-layer element. As a result, the maximum luminance, the maximum luminous efficiency, maximum external quantum efficiency of about 124 [%], 164 [%], 106 [%] improve was confirmed.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.229-237
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• 1998

We grew the hexagonal GaN films on (100) Si and (00.1) sapphire substrates in the temperature range of $300~730^{\circ}C$ by the direct reaction between thermally ionized N-source and thermally evaporated Ga-source. The GaN growth rates are increased at the initial stage of GaN formation and it was saturated to some values by the coalescence of each crystallites. The oxygen signal was observed in XPS spectra for all the GaN films grown in this work, especially low- temperature grown GaN film may due to incorporation of the residual oxygen in the growth chamber. The surface of low-temperature and shorter time grown films covered only Ga-droplets. however, with increasing the both substrate temperature and the growth time GaN is growth to crystallites. and coalescence to ring-type crystallites. With sufficient supply of N-source, they were changed to platelets. In the PL spectrum measured at 20 K, we observed the impurity related emission at 3.32eV and 3.38eV.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.15-16
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• 2012

General lighting will be replaced into LED due to the high efficiency, low power consumption, long life than conventional light, moreover, since it is a basically semiconductor device that can convert the electric energy to visible light at a very high speed, using these characteristics can be performed communication modulation via the high-speed ON-OFF switching. Recently, visible light communication (VLC: Visible Light Communication) technology is received attention and there have been many researches. This paper is implemented media signal transmission by combining LED with VLC, a transmitter used the LED light-emitting device and receiver used an infrared sensor. In order to increase the efficiency of the communication system to improve the existing LED visible light communication driver of power conversion efficiency and thermal issues that is applied to the visible light communication in order to improve the speed of transmission media to research a new way of LED driver.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.12-17
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• 1999

$MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystals were grown in the rhombohedral structure by the chemical transport reaction (C.T.R.) method using iodine as a transport agent. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct band gap. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region by decreasing temperature and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The impurity optical absorption peaks due to nickel are observed in $MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Ni_{2+}$ ions located at $T_d$ symmetry site of $MgIn_2Se_4$ host lattice. In the hotoluminescence spectrum of the single crystal at 10 K, a blue emission with a peak at 687nm and a green emission with a peak at 815nm for the $MgIn_2Se_4$ single crystal were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.278-281
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• 2003

The p-CIn2Te4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and the various heat-treated crystals, the (Do, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn2Te4:Cd, while the (Ao, X) emission completely disappeared in the CdIn2Te4:Cd. However, the (Ao, X) emission in the photoluminescence spectrum of the CdIn2Te4:Te was the dominant intensity like an as-grown CdIn2Te4 crystal. These results indicated that the (Do, X) is associated with VTe acted as donor and that the (Ao, X) emission is related to VCd acted as acceptor, respectively. The p-CdIn2Te4 crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of (Do, Ao) emission and its TO phonon replicas is related to the interaction between donors such as VTe or Cdint, and accepters such as VCd or Teint. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in the stable form of bonds.

• Journal of the Korean Society of Radiology
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• v.12 no.2
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• pp.271-275
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• 2018

It is possible to do not use the Image Plate for a long time in the clinic. for the acquisition of reliable images the decommissioning process is very important. In this study, we would like to look at complex noises that may occur during Image Plate use depending on the frequency and time of day. first, we got the image from computer radiography. second, We calculate the noise changes using Peak Signal to Noise Ratio(PSNR) and Noise Power Spectrum(NPS). finally, we suggest that remove the noise from the IP for more than 4 hours. and It turned out to be better to remove the noise more than once. this study will be a quantitative reference for Image Plate management and use in the clinical trial.