• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.389-389
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• 2008

나노-스피어 리소그래피는 기존 리소그래피 방법에 비해 나노 크기의 패턴을 저비용에 공정이 간단하고, 대면적 패터닝이 가능하다는 장점이 있다. 본 논문에서는 나노-스피어 리소그래피 공정을 이용하여 실리콘 기판 위에 2차원 광자결정 구조를 제작하였다. 실리콘 기판 위에 직경이 500 nm 인 폴리스티렌 나노-스피어를 스핀 코팅 방법으로 단일막을 형성하였다. 스핀코팅 조건은 스핀속도와 시간을 조절하여 1단계는 400 rpm에서 10초, 2단계는 800 rpm에서 120초, 3 단계는 1400 rpm 에서 10초로 공정하였다. 그리고 산소 플라즈마를 이용한 반응성 이온 식각공정으로 폴리스티렌 나노-스피어의 크기를 조절할 수 있었으며, 이때 실리콘 기판 위에 형성된 다양한 크기의 폴리스티렌 나노-스피어 단일막은 금속막 증착시 마스크의 역할을 하게 된다. 금속막의 증착은 RF 마그네트론 스퍼터링 시스템을 이용하였으며, 공정 조건은 RF power를 100W, 공정 압력을 5 mTorr, Ar 유량을 10sccm으로 하였다. 스퍼터링 공정 후 폴리스티렌 나노-스피어를 제거함으로써 2 차원 광자결정 구조를 제작할 수 있었다. 실험 결과 단일막으로 형성된 폴리스티렌 나노-스피어의 크기를 조절함으로써 다양한 2차원 광자결정 구조 제작이 가능함을 확인할 수 있었다.

• Journal of Convergence for Information Technology
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• v.11 no.2
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• pp.10-15
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• 2021

In this paper, we formed perovskite (CH3NH3PbI3) thin films on glass with wet coating methods, and used various analytical techniques to discuss film thickness, surface roughness, crystallinity, composition, and optical property. The coated semiconductor material has no defects and is uniform, the surface roughness value is very small, and a high absorption rate has been observed in the visible light area. Next, in order to implement the hole shape in the organic-inorganic layer, Samples in the order of a metal mask with holes at regular intervals, a glass coated with a perovskite material, and a magnet were etched with atmospheric pressure plasma equipment. The shape of the hole formed in the perovskite material was analyzed by changing the time. It can be seen that more etching is performed as the time increases. The sample with the longest processing time was examined in more detail, and it was classified into 7 regions by the difference according to the location of the plasma.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.1-6
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• 2000

Recently, SrBi$_{2}$Ta$_{2}$ $O_{9}$(SBT) and Pb(Zr,Ti) $O_{3}$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) with higher read/ write speed, lower power consumption and nonvolartility. SBT thin film has appeared as the most prominent fatigue free and low operation voltage. To highly integrate FRAM, SBT thin film has to be etched. A lot of papers have been reported over growth of SBT thin film and its characteristics. However, there are few reports about etching SBT thin film owing to difficult of etching ferroelectric materials. SBT thin film was etched in CF$_{4}$Ar plasma using magnetically enhanced inductively coupled plasma (MEICP) system. In order to investigate the chemical reaction on the etched surface of SBT thin films, X-ray Photoelecton spectrosocpy (XPS) and Secondary ion mass spectroscopy(SIMS) was performed.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.485-490
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• 1994

The reactive ion etching characteristics of aluminum oxide films, prepared by PECVD, were investigated in the CCl4 plasma. The atomic chlorine concentration and the DC self bias were determined at various etching conditions, and their effects on the etch rate of aluminum oxide film were studied. The bombarding energy of incident particles was found to play the more important role in determining the etch rate of aluminum oxide rather than the atomic chlorine concentration. It is considered to be because the bombardment of ions or neutral atoms breaks the strong Al-O bonds of aluminum oxide to help activate the formation reaction of AlCl3 which is the volatile etch product.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.450-455
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• 2000

For further scaling down of the silicon devices, the application of low dielectric constant materials instead of silicon oxide has been considered to reduce power consumption, crosstalk, and interconnection delay. In this paper, the effect of $O_2/SF_6$ plasma chemistry on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. The etch rate of polyimide decreases with the addition of $SF_6$ gas due to formation of nonvolatile fluorine compounds inhibiting reaction between oxygen and hydrocarbon polymer, while applying substrate bias enhances etching process through physical attack. However, addition of small amount of $SF_6$ is desirable for etching topography. $SiO_2$ hard mask for polyimide etching is effective under $O_2$plasma etching(selectivity~30), while $O_2/SF_6$ chemistry degrades etching selectivity down to 4. Based on the above results, $1-2\mu\textrm{m}$ L&S PI2610 patterns were successfully etched.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.291-297
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• 1996

The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x$_{x}$ (x$_{x}$ (1

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.85-91
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• 2009

There has been a rapid progress for flexible polymer-based MEMS(Microelectromechanical Systems) technology. Polycarbonate (PC) and Poly Methyl Methacrylate (PMMA), so-called acrylic, have many advantages for optical, non-toxic and micro-device application. We studied dry etching of PC and PMMA as a function of % gas ratio in the $O_2/SF_6/CH_4$ temary plasma. A photoresist pattern was defined on the polymer samples with a mask using a conventional lithography. Plasma etching was done at 100 W RIE chuck power and 10 sccm total gas flow rate. The etch rates of PMMA were typically 2 times higher than those of PC in the whole experimental range. The result would be related to higher melting point of PC compared to that of PMMA. The highest etch rates of PMMA and PC were found in the $O_2/SF_6$ discharges among $O_2/SF_6$, $O_2/CH_4$ and $SF_6/CH_4$ and $O_2/SF_6/CH_4$ plasma composition (PC: ${\sim}350\;nm/min$ at 5 sccm $O_2/5$ sccm $SF_6$, PMMA: ${\sim}570\;nm/min$ at 2.5 sccm $O_2/7.5$ sccm $SF_6$). PC has smoother surface morphology than PMMA after etching in the $O_2/SF_6/CH_4$ discharges. The surface roughness of PC was in the range of 1.9$\sim$3.88 nm. However, that of PMMA was 17.3$\sim$26.1 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.268-273
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• 2014

$Y_2O_3$ ceramic specimens were fabricated from the granular powder, obtained by spray drying process from the slurry. The slurry was prepared by mixing PVA binder, NaOH for Ph control, PEG and $Y_2O_3$ powder. The $Y_2O_3$ specimen was shaped in size of ${\phi}14mm$ and then sintered at $1650^{\circ}C$. The characteristics, microstructure, densities and plasma resistance of the $Y_2O_3$ specimens were investigated with the function of forming pressure and sintering time. $Y_2O_3$ specimens were exposed under the $CHF_3/O_2/Ar$ plasma, the dry etching treatment of specimens was carried out by the physical reaction etching of $Ar^+$ ion beam and the chemical reaction etching of $F^-$ ion decomposed from $CHF_3$. With increasing sintering time, $Y_2O_3$ specimens showed relatively high density and strong resistance in plasma etching test.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.41-47
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• 1999

In this paper, we report 3D-simulations of a plasma etching process by employing cell-removal algorithm takes into account the mask shadow effect os well as spillover errors. The developed simulator haas an input interface to take not only an analytic form but a Monte Carlo distribution of the ions. The graphic user interface(GUI) was also built into the simulator for UNIX environment. To demonstrate the capability of 3D-SURFILER(SURface proFILER), we have simulated for a typical contact hole structure with 36,000($30{\times}40{\times}30$) cells, which takes about 20 minutes with 10 Mbytes memory on sun ultra sparc 1. as an exemplary case, we calculated the etch profile during the reactive ion etching(RIE) of a contact hole wherein the aspect ratio is 1.57. Furthermore, we also simulated the dependence of a damage parameter and the evolution of topography as a function of the chamber pressure and the incident ion flux.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.101-101
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• 2011

최근 반도체 및 디스플레이 사업의 급속한 발전으로 인해 반도체 공정은 초미세선폭화, 대면적화 되면서 오염입자를 제어하는 것이 이슈가 되고 있다. 반도체 및 디스플레이의 제조공정 중 챔버 내 진공부품은 진공상태에서 플라즈마에 의해 물리적인 데미지와 화학적으로 매우 활성이 높은 라디칼(Radical)반응에 의한 부식이 진행된다. 이러한 공정영향에 의해 챔버 내 부품들은 부식이 되고 공정 중에 오염입자가 발생하게 되어 반도체 및 디스플레이의 수율저하에 큰 영향을 미치고 부품교체 비용 또한 많이 들고 있다. 본 연구에서는 진공부품의 내전압측정방법을 이용하여 진공부품의 피막특성을 평가하는 연구방법으로서 내전압 지그(Zig)를 표준화하여 제작하였고, 재현성있는 데이터로 피막특성을 정량적으로 측정하는 방법을 연구 하였다. 식각공정 중에 발생하는 부식특성에 관해서는 화학부식와 플라즈마부식 열충격 등 각각 독립적으로 부식환경에 노출시켰으며, 진공부품의 손상 전 후의 내전압 특성변화를 이용하였다. 또한, CCP (Capacitativly Coupled Plasma)형의 RF magnetic sputter을 설계 제작하였고 진공부품에 고밀도 플라즈마를 발생시켜 플라즈마데미지에 의해 발생한 오염입자를 실시간으로 monitoring하여, 정량적으로 측정된 내전압특성결과를 비교 검증하였다.