• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.99-103
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• 2007

ICP(Inductively Coupled Plasma)는 높은 밀도를 가지는 플라즈마 소스로서 반도체 산업에 널리 이용되고 있다. 하지만 기존의 ICP는 축전결합(capacitive coupling), 낮은 역률(power factor), 전송 선로의 영향 등의 결점을 가지고 있다. 이러한 문제점을 해결하기 위해 강자성체인 페라이트(ferrite)를 이용하여 측면형 페라이트 ICP 소스를 개발하게 하였다. 측면형 소스의 경우 플라즈마의 생성 부분이 측면에 위치하기 때문에 높은 압력에서 플라즈마 밀도 분포는 가운데가 낮고 측면이 높은 오목한 형태가 된다. 다양한 환경에서 플라즈마 밀도의 균일도를 제어하기 위해 이 논문에서는 측면형 페라이트 ICP 챔버 윗부분에 평면형의 나선형 안테나를 부착하여 그 효과를 알아보는 실험을 수행하였다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.128-131
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• 2007

As the minimum feature size decrease, control of contamination by nanoparticles is getting more attention in semiconductor process. Cleaning technology which removes nanoparticles is essential to increase yield. A reference wafer on which particles with known size and number are deposited is needed to evaluate the cleaning process. We simulated particle trajectories in the chamber by using FLUENT. Charged monodisperse particles are generated using scanning mobility particle sizer (SMPS) and deposited on the wafer by electrostatic force. The experimental results agreed with the simulation results well. We calculate the particles loss in pipe flow theoretically and compare with the experimental results.

• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.25-30
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• 2003

In the case of a vibration sensitive equipment, it require a vibration free environment to provide its proper function. Especially, lithography and inspection device, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved Giga Class semi conductor wafers. This high technology equipments require very strict environmental vibration criteria in proportion to the accuracy of the manufacturing. In this paper, the dynamic analysis and modal test were performed to evaluate the dynamic properties of the constructing clean room structure. Based on these results, a structural dynamic modification(SDM) were required to satisfiy the vibration allowable limit for pression machine. Therefore, in order to improve the dynamic stiffness of clean room structure, the VSD system which can control the force applied on structure, were adopted and its utility were proved from dynamic test results of the improved structure after a modification work.

• 반도체디스플레이기술학회지
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• 제3권2호
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• pp.11-15
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• 2004

Scales, accumulated on some parts of semiconductor equipments such as sputters and CVD during the device fabrication processes, often lower the lifetime of the equipments and production yields. Thus, many equipment parts have be cleaned regularly. In this study, an attempt to establish an effective process to remove scales on the sidewall of collimators located inside the chamber of the sputter was made. The EDX analysis revealed that the scales were composed of Ti and TiN with the columnar structure. Through the trial-and-error experiments, it was found that the etching in the $HNO_3$:$H_2SO_4$:$H_2O$=4:2:4 solution for 5.5 hrs at $67^{\circ}C$, after the oxide removal in the HF solution, and the heat-treatment at $700^{\circ}C$ for 1 min., was the most effective process for the scale removal.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.145-149
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• 2006

As the minimum feature size decreases, it is more difficult to control critical contaminant particles. For 16GB flash memory introduced by Samsung a few months ago, 50nm process was used and in this case, contaminant particles as small as 25nm should be control led. The particle beam mass spectrometer (PBMS) was developed to directly sample particles at pressures down to 100 mtorr. This instrument is sensitive to small particles (>5nm) produced in low concentrations ($>20cm^{-3}$). The PBMS has proved to be effect ive in measuring particles generated during semi-conductor fabrication processes, such as low-pressure chemical vapor deposition (LPCVD) of thin films. The operating principle of the PBMS and some measurement results are reviewed in this paper.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.67-72
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• 2020

This study analyzes the method of adhesion and improvement between heat.er and RF filter in PE-CVD equipment through TRIZ method and proposes a solution. TRIZ Solution such as function analysis, 9-window matrix, ASIT, and Root cause analysis were used. The contact temperature between the heater and the RF filter was 20% and the surface temperature was lowered to 5.7℃, suggesting an improvement method for the thermal expansion of the PE-CVD equipment hot zone.

• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.39-43
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• 2013

The semiconductor equipments generate necessary data through communication networks for the effective manufacturing processes and automation of semiconductor equipments. For transferring data between semiconductor equipments and sending data to monitor equipments, several standards for communication protocols have been proposed. Communication networks in semiconductor manufacturing systems will transmit a lot of data traffic, which can be vulnerable in data delay and network failure. Therefore, it is required that data traffic need to be distributed. To accomplish this objective, we recommend the use of a redundant and valuable communication path which is constructed by a wireless sensor network. In this paper, the directed diffusion method for wireless sensor networking is suggested for networking semiconductor equipments. It is shown that how the directed diffusion is employed to connect semiconductor equipments. Also, we show how to implement the SECS of semiconductor equipments communication protocols based on the directed diffusion.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
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• pp.195-201
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• 2004

In design stage of high precision manufacture/inspect ion FAB building, it is necessary to investigate the vibration allowable limits of high precision equipment and to study a structure dynamic characteristics of C/R and Sub-structure in order to provide a structure vibration environment to satisfy thess allowable limits. The aim of this study is to investigate the dynamic characteristics of PC-Type mock-up structures designed for next TFT LCD FAB through vibration measurement and analysis procedure, therefore, to provide a proper dynamic structure design for high precision manufacture/inspection work process, which satisfy thess allowable limits.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.27-31
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• 2018

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.35-38
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• 2006

디스플레이 산업에 이용되는 적층판(layered plates)의 결합공정 중 냉각공정에서 열팽창계수의 차이로 인해 잔류응력이 발생하고 심하면 적층판에 크랙(crack)이 발생한다. 본 연구에서는 적층판의 결합공정을 대상으로 현상을 분석하고 이 과정을 시뮬레이션하는 해석 프로그램을 개발하였다. 또한 이를 토대로 향후의 새로운 제품에 대해서도 크랙과 같은 문제점을 최소화 할 수 있는 신뢰성 있는 공정 셋업을 제시하기 위해 차원감소법(dimension reduction method)과 근사화 방법인 반응표면법(response surface method), 순차적 근사최적화 기법(Sequential Approximate Optimization, SAO)을 이용하여 신뢰성기반의 강건최적설계를 하였다.