• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.214-215
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• 1998

• Proceedings of the Optical Society of Korea Conference
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• 1995.06a
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• pp.18-23
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• 1995

광도파로와 반도체 광증폭기를 직접하여 1.3$\mu$m 과장대에서 동작하는 2x2 InGaAsP/InP LD-gate형 광스위치를 제작하였다. 광스위치의 특성으로 광섬유 입출력간의 총삽입 손실이 6~10dB 이었고, 소광비가 40dB 이상으로서 세계적인 수준의 양호한 결과를 얻었다. 제작된 광스위치는 광도파로와 반도체 광증폭기 간의 높은 광 결합 효율을 얻기 위하여 RIE(Reactive Ion Etching) 에 의한 건식 식긱과 4회에 걸친 OMVPE(Organo Metallic Vapor Phase Epitaxy) 결정 성장을 이용하였으녀, 수동 도파로와 LD 사이의 광 결합 효율이 '90% 이상이 됨을 확인하였다. d;라힌 결과는 광집적화의 연구에 상당한 기에를 할 것으로 기대된다.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.21-21
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• 1997

• The Magazine of the IEIE
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• v.30 no.5
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• pp.36-36
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• 2003

• The Magazine of the IEIE
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• v.30 no.5
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• pp.492-498
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• 2003

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.94-95
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• 2004

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.182-183
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• 2004

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.151-154
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• 2002

All-optical OR logic gate is realized by use of gain saturation and wavelength conversion in the semiconductor optical amplifiers (SOA). It is operated by the nonlinearity of the SOA gain and hence to obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier (EDFA) at the input of the SOA. The operation characteristics of all-optical OR logic gate are successfully measured at 2.5 Gbit/s.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.340-346
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• 2000

Traveling wave type semiconductor optical amplifiers integrated with spot-size-converter (SSC-TW-SOA) have been extensively studied for the improvement of coupling effiClency With single-mode fiber and fO! the cost reducClon 111 a packaging In tlIis paper the slructural dependence of the spot-slZe-converter on the effective facet reflectlvllY $R_{eff}$ was experimentally as well as thcoretienlly mvestlgated. It was shown that not only a sufficient mode-conversion in a sse region along the latersl and tran~verse directions but also an introductIOn of angled-facet were very essential in order to reduce $R_{eff}$ Very small ripple less than 0.1 dB in an amplified spontaneous emission spectrum was observed with the fabncated SSC-lW-SOA which consists of the wrndow length of $20\mu\textrm{m}$, facet angle of $7^{\circ}$, and antlrelleetioll-coated facet of ] % reflectivity.tivity.

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.421-424
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• 2002

By using SOA (Semiconductor Optical Amplifier) based devices, an all-optical half adder has been successfully demonstrated at 10 Gb/s. All-optical XOR and AND gates are utilized to realize SUM and CARRY. Since SUM and CARRY have been simultaneously realized to form the all-optical half adder, complex calculation and signal processing can be achieved.