• Title/Summary/Keyword: 반도체패키지

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S-Parameter Simulation for Trench Structure and Oxide High Dielectric of Trench MIM Capacitor (Trench구조와 산화물 고유전체에 따른 Trench MIM Capacitor S-Parameter 해석)

  • Park, Jung-Rae;Kim, Gu-Sung
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.167-170
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    • 2021
  • Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO2, Al2O3, and Ta2O5 are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

Impedance Change of Aluminum Pad Coated with Epoxy Molding Compound for Semiconductor Encapsulant (반도체 패키지 봉지재용 에폭시 수지 조성물이 코팅된 알루미늄 패드의 임피던스 변화)

  • 이상훈;서광석;윤호규
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.3
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    • pp.37-44
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    • 2000
  • The corrosion behavior of aluminum pad coated with epoxy molding compound (EMC) was investigated using electrochemical impedance spectroscopy (EIS). The impedance change was evaluated by the absorption of deionized water (DI water) to EMC coating and the interface between EMC and aluminum. During the absorption a decrease in resistance and thus an increase in capacitance of EMC as well as the interface of EMC/Al could be observed. Up to about 170 hours of absorption the EMC was saturated with the water molecules and ions generated from EMC. Subsequently the ionic water was penetrated to the interface and finally the corrosion of aluminum was occurred by the Dl water and ions. From measuring the adhesion strength with the Dl water absorption it was expected that the saturation of water and ions in the interface decreased the adhesion strength. The higher filler content of EMC should be necessary to inhibit the corrosion of aluminum electrode in microelectronic packages.

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Trends of Power Semiconductor Device (전력 반도체의 개발 동향)

  • Yun, Chong-Man
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.3-6
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    • 2004
  • Power semiconductor devices are being compact, high performance and intelligent thanks to recent remarkable developments of silicon design, process and related packaging technologies. Developments of MOS-gate transistors such as MOSFET and IGBT are dominant thanks to their advantages on high speed operation. In conjunction with package technology, silicon technologies such as trench, charge balance and NPT will support future power semiconductors. In addition, wide band gap material such as SiC and GaN are being studies for next generation power semiconductor devices.

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A Study on the BGA Package Measurement using Noise Reduction Filters (잡음제거 필터를 이용한 BGA 패키지 측정에 관한 연구)

  • Jin, Go-Whan
    • Journal of the Korea Convergence Society
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    • v.8 no.11
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    • pp.15-20
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    • 2017
  • Recently, with the development of the IT industry, interest in computer convergence technology is increasing in various fields. Especially, in the semiconductor field, a vision system that uses a camera and computer convergence is often used to inspect semiconductor device defects in the production process. Various systems have been studied to remove noise, which is a major cause of degradation in processing of data related to these image processing systems. In this paper, we try to detect defects in BGA (Ball Grid Array) package devices by recognizing defects in advance during mass production. We propose a measurement system using a Gaussian filter, a Median filter, and an Average filter, which are widely used for noise reduction of image data Applying the proposed system to the manufacturing process of the BGA package can be used to judge whether the defect is good or not, and it is expected that productivity will be improved.

The Effect of Insulating Material on WLCSP Reliability with Various Solder Ball Layout (솔더볼 배치에 따른 절연층 재료가 WLCSP 신뢰성에 미치는 영향)

  • Kim, Jong-Hoon;Yang, Seung-Taek;Suh, Min-Suk;Chung, Qwan-Ho;Hong, Joon-Ki;Byun, Kwang-Yoo
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.4
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    • pp.1-7
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    • 2006
  • A major failure mode for wafer level chip size package (WLCSP) is thermo-mechanical fatigue of solder joints. The mechanical strains and stresses generated by the coefficient of thermal expansion (CTE) mismatch between the die and printed circuit board (PCB) are usually the driving force for fatigue crack initiation and propagation to failure. In a WLCSP process peripheral or central bond pads from the die are redistributed into an area away using an insulating polymer layer and a redistribution metal layer, and the insulating polymer layer affects solder joints reliability by absorption of stresses generated by CTE mismatch. In this study, several insulating polymer materials were applied to WLCSP to investigate the effect of insulating material. It was found that the effect of property of insulating material on WLCSP reliability was altered with a solder ball layout of package.

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Au wire와 Ag pad간 확산현상의 가속수명시험

  • Kim, Cheol-Hui;Hwang, Sun-Mi;Song, Byeong-Seok
    • Proceedings of the Korean Reliability Society Conference
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    • 2011.06a
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    • pp.49-54
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    • 2011
  • 반도체 칩과 패키지는 wire로 연결되는데, 이 때 반도체의 용도에 따라 다양한 wire와 pad의 조합이 사용되며, 이 두 개의 다른 금속물질 결합부위는 IMC(Inter Metallic Compound)를 형성하게 된다. 그러나, 결함 및 오염 등에 의하여 인접재료의 원자들이 이동하는 확산(Diffusion)이 발생하게 되어 IMC가 성장하고, 두 개의 금속물질간의 확산율은 상호 다르며, 확산율은 온도에 따른 함수가 된다. Au wire와 Ag pad를 이용하여 제조한 IR 수신모듈를 대상으로 3가지 고온조건에서 가속수명시험을 실시하였고, 각 온도별 수명분포를 바탕으로 가속계수와 활성화에너지 도출 및 정상온도에서의 수명도 예측할 수 있었다.

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진공 몰드를 이용한 제품의 안정화 연구

  • 김선오;허용정
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.05a
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    • pp.107-110
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    • 2005
  • 몰딩 공정중에 발생된 보이드(void)는 제품의 기계적인 물성치에 큰 영향을 준다. 미세균열(micro crack)이나 박리(delamination)등의 결함을 유발하는 보이드의 형성을 최소화시킬 수 있는 방법으로 진공 몰드를 제시하였다. 본 연구에서는 대기압 상태와 진공 상태에서 나타나는 유동 선단에서의 보이드 생성과 소멸을 실험관찰 하였고 몰드 패키지의 현상을 실험적으로 비교하였다. 아울러 진공 몰드의 공정 이론과 조건을 구하였다.

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Replication 공정을 이용한 Polymer Heat Exchanger 제작

  • 정순호;김영철;서화일
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.12a
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    • pp.7-11
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    • 2003
  • 집적회로에서 발생되는 열은 회로의 불안정한 동작을 야기하여 시스템의 기능을 저하시키므로 동작중인 집적회로를 일정온도 이하로 유지 할 수 있는 장치가 요구된다. 현재 사용되는 방열 시스템은 대부분이 크기가 큰 공냉식이며 Heat sink의 크기로 인해 수냉식의 방열 시스템 역시 그 크기가 칩의 크기보다 매우 크다. 본 논문에서는 드라이 필름 레지스터를 사용하여 짧은 제작 기간과 적은 비용으로 Master를 제작하였다. 이 Master를 사용한 Replication 공정을 이용하여 칩의 패키지내에 삽입될 수 있는 Polymer Heat Exchanger를 제작하였다.

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