• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.212-213
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• 2005

• Journal of the Korean Magnetics Society
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• v.5 no.1
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• pp.54-57
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• 1995

We have studied the room temperature $^{1}H$ nuclear magnetic relaxation in anisotropic antiferromagnet $MnCl_{2}.4H_{2}O$ using a wide range of $^{1}H$ NMR (nuclear magnetic resonance) field. Being a system of dense paramagnetic $Mn^{++}$ ions at room temperature, $MnCl_{2}.4H_{2}O$ shows some features that can be expected from dilute paramagnetic systems, as well as some results that drastically deviate from the dilute paramagnetic approximations. Besides, $^{1}H$ nuclei exhibit an anomalous deviation in the spin-lattice relaxation time ($T_{1}$) around the field of 0.7 T.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.22-25
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• 2007

In this research, magnetic properties of spin valve structures using IrMn layers as antiferromagnetic were studied depending on the thickness of the pinned layer. The spin valve structure was Si substrate/$SiO_2(2,000\;{\AA})/Mo(17\;{\AA})NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(t\;{\AA})/Ta(25\;{\AA})$. Also, Mo film was deposited on Si substrates and the thermal annealing effect was analyzed. The resistivity of the Mo film was increased as an annealing temperature was increased up to $600^{\circ}C$. The variations of MR ratio were related with magnetic exchange coupling field of the spin valve structures for various IrMn pinned layer thickness up to 130 ${\AA}$. MR ratio and $H_{ex}$ of spin valves was about 9.05% and 277.5 Oe when the thickness of the IrMn pinned layer was $32.5\;{\AA}(t=32.5\;{\AA})$. It was increased to 9.65% and 337.5 Oe for $t=65\;{\AA}$. For $t=97.5\;{\AA}$, the MR ratio and Hex decreased to 8.2% and 285 Oe, and further decrease was observed up to $t=130\;{\AA}$.

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.232-236
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• 2008

Dependence of interlayer exchange coupling on antiferromagnetic IrMn thickness, thermal stability, and parallel anisotropy angle in perpendicular anisotropy [CoFe/Pt/CoFe]/IrMn multilayers was investigated. The magnetic property of [CoFe($10{\AA}$)/Pt($8{\AA}$)/CoFe($10{\AA}$)] induced by antiferromagnetic ordering of IrMn layer was maintained a stable perpendicular anisotropy up to $250^{\circ}C$ and from $7{\AA}$ to $160{\AA}$ of IrMn thickness. The value of interlayer exchange coupling of [CoFe/Pt/CoFe]/IrMn multilayers with perpendicular anisotropy increased to 1.5 times at anisotropy angle of $60^{\circ}$ more than of $0^{\circ}$. On the other side, the interlayer exchange coupling at anisotropy angle of $90^{\circ}$ was $\infty$ Oe, it was likely diverted to a parallel shape magnetization.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.18-19
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• 2015

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.36-41
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• 2000

We studied the exchange anisotropy of Ni-Fe/Co-Fe/Mn-Ir/Cu/buffer/Si multilayers using D.C magnetron sputtering technique. Generally, Ni-Fe/Mn-Ir/buffer(Cu)/Si multilayers cannot pin the ferromagnetic layer for the lower exchange biased field. We got $H_{ex}$ ex/ increased by two times, after using Cu/Ta as buffer layer to get larger grain size of Mn-Ir layer and inserting very thin Co-Fe layer between the Ni-Fe layer and the Mn-Ir layer to get improved grain-to-grain epitaxy relation at the interface between Ni-Fe layer and Mn-Ir layer. The variation of $H_{ex}$ by thickness of Mn-Ir layer in ferromagnete/Mn-Ir/buffer/Si multilayers is different to that in Mn-Ir/ferromagnete/buffer/Si multilayers, because the volume distribution of grain size of Mn-Ir layer and the exchange energy at the interface between the Mn-Ir and the ferromagnetic layers is different for stacking sequence.

• Journal of the Korean Magnetics Society
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• v.21 no.4
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• pp.132-135
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• 2011

The exchange bias field ($H_{EX}$) and the coercivity ($H_C$) variation and change depending on the thickness of intermediately super-soft magnetic NiFeCuMo layer with different thickness of the bottom NiFe layer were investigated. The $H_{EX}$ of triple pinned NiFe(4 nm)/NiFeCuMo($t_{NiFeCuMo}$= 1 nm)/NiFe(4 nm)/FeMn multilayer has the maximum value more less than one of single pinned NiFe(8 nm)/FeMn layer. If NiFeCuMo layer is inserted each into between the pinned and free NiFe layers, we can be used as GMR-SV device for a bio-sensor that has improved magnetic sensitivity.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.146-148
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• 2012

미크론 자성비드 검출용 바이오센서에 활용하는 GMR-SV 박막을 이온빔 스퍼터링 증착법으로 glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm)의 구조를 갖도록 증착하였다. 비자성체 Cu의 두께가 3.0 nm에서 2.2 nm까지 얇아질수록 교환결합력은 증가하였으며 자기저항비는 다소 낮았다. 비자성체의 두께가 얇으면 반강자성체의 층간 교환작용이 강자성체의 고정층 뿐만 아니라 자유층의 스핀배열에도 영향을 주고 있음을 확인할 수 있었다. 또한 리소그래피 공정 과정을 거쳐 GMR-SV 소자를 제작하여 미트론 자기비드를 검출하였다. 여기서 자기비드를 떨어뜨리기 전과 후의 자기저항비, 교환결합력, 보자력은 각각 0.9%, 3 Oe, 2 Oe의 값을 나타내었다. 이것으로 미크론단위의 바이오센서로서 활용할 수 있는 가능성을 보여주었다.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.141-145
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• 2001

The Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ exchange bias layers (EBLs), which have a small amounts of Pt, exhibit a high value of H$\_$ex/. The Si/Ni-Fe/Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ EBL shows the largest H$\_$ex/ of 187 Oe, which is equivalent to a exchange energy (J$\_$ex/) of 0.146 erg/cm$^2$. Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ EBLS are estimated to have blocking temperature of about 250 $\^{C}$, which is higher than those of Mn-Ir EBLs and Mn-Ir-Pt EBLs with higher Pt contents. This result implies that a little addition of Pt element promotes thermal stability in the Mn-Ir-Pt EBLs. The chemical stability of Mn-Ir-Pt EBLs was characterized by potentiodynamic test, which was performed in 0.001 M NaCl solution. The current density of Mn-Ir-Pt films was gradually reduced with increasing Pt content. The present results indicate that the Mn-Ir-Pt with a small amount of Pt is suitable for an antiferromagnetic material for a reliable spin valve giant magnetoresistance device.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.180-184
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• 2008

The relation of ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration has been investigated for variously angles of unidirectional deposition magnetic field of FeMn layer in Corning glas/Ta(5 nm)/NiFe(7 nm)/FeMn(25 nm)/ Ta(5 nm) multilayer prepared by ion beam deposition. Three unidirectional deposition angles of FeMn layer are $0^{\circ},\;45^{\circ}$, and $90^{\circ}$, respectively. The exchange bias field ($H_{ex}$) obtained from the measuring easy axis MR loop was decreased to 40 Oe in deposition angle of $45^{\circ}$, and to 0 Oe in the angle of $90^{\circ}$. One other side hand, $H_{ex}$ obtained from the measuring hard axis MR loop was increased to 35 Oe in deposition angle of $45^{\circ}$, and to 79 Oe in the angle of $90^{\circ}$. Although the difference of uniderectional axis between ferromagnet NiFe and antiferromagnet FeMn was 90o, the strong antiferromagnetic dipole moment of FeMn caused to rotate the weak ferromagnetic dipole moment of NiFe in the interface. This result implies that one of origins for exchange coupling mechanism depends on the effect of magnetic field angle during deposition of antiferromgnet FeMn layer.