• Title/Summary/Keyword: 박막 잔류응력

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The Effect of Magnetic Field Annealing on the Structural and Electromagnetic Properties of Bising $Co_{82}Zr_6Mo_{12}$ Thin Films for Magnetoresistance Elements (자기저항소자의 바이어스용 $Co_{82}Zr_6Mo_{12}$ 박막의 구조 및 전자기적 특성에 미치는 자장 중 열처리의 영향)

  • 김용성;노재철;이경섭;서수정;김기출;송용진
    • Journal of the Korean Magnetics Society
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    • v.9 no.2
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    • pp.111-120
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    • 1999
  • The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

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폴리이미드 기판을 이용한 유연 Cu(In,Ga)Se2 박막 태양전지 제작

  • Park, Su-Jeong;Jo, Dae-Hyeong;Lee, U-Jeong;Wi, Jae-Hyeong;Han, Won-Seok;Jeong, Yong-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.309.2-309.2
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    • 2013
  • Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 일반적으로 Na을 함유하고 있는 소다회유리를 기판으로 사용하여 제작되며, 높은 광전 변환 효율로 인해 많은 연구가 이루어지고 있다. 특히 제조 비용 절감과 양산성 향상을 위해 현재 유연 기판 CIGS 박막 태양전지에 대한 연구가 활발히 이루어지고 있으며, 폴리이미드 기판에서 20.4%의 최고 효율이 보고되었다. 유연 기판은 유리 기판 대비 무게가 가볍기 때문에 유리 기판 태양전지보다 활용도가 높으며, 우주용으로 사용할 경우 단위 무게 당 발생되는 전력이 높은 장점이 있다. 본 연구에서는 폴리이미드 기판을 이용하여 유연 CIGS 박막 태양전지를 제작하였다. 후면 전극 Mo은 DC sputtering으로 증착하였으며, Mo의 증착 압력에 따라 폴리이미드 기판의 잔류 응력과 전기적 특성을 분석하여 증착 압력을 결정하였다. 광흡수층인 CIGS는 다단계 동시 증발 법으로 증착하였으며, 2nd stage 공정온도는 유리 기판 대비 저온인 $475^{\circ}C$로 공정을 진행하였다. 저온공정인 $475^{\circ}C$ 공정에서는 Ga의 함량이 높아질수록 성능이 감소하였으며, Na 공급을 통해 Voc와 FF가 향상되어 성능이 향상됨을 알 수 있었다. 버퍼층 CdS는 습식 공정인 CBD법으로 증착하였으며, 공정변수인 thiourea의 농도와 CdS 박막의 두께 변화를 통해 폴리이미드 기판 CIGS 박막 태양전지에서 CdS 버퍼층의 최적의 조건을 도출하였다. 최종적으로 제작된 폴리이미드 기판 유연 CIGS 박막 태양전지는 반사 방지막 없이 개방전압 0.511V, 단락전류밀도 32.31mA/cm2, 충실도 64.50%, 변환효율 10.65%를 나타내었다.

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Study on Electro-Mechanical Characteristics of Array Type Capacitive Pressure Sensors with Stainless Steel Diaphragm and Substrate (스테인리스 강 박막 및 기판을 이용한 배열형 정전용량 압력센서의 전기 기계적 특성연구)

  • Lee, Heung-Shik;Chang, Sung-Pil;Cho, Chong-Du
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.30 no.11 s.254
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    • pp.1369-1375
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    • 2006
  • In this work, mechanical characteristics of stainless steel diaphragm have been studied as a potential robust substrate and a diaphragm material for micromachined devices. Lamination process techniques combined with traditional micromachining processes have been adopted as suitable fabrication technologies. To illustrate these principles, capacitive pressure sensors based on a stainless steel diaphragm have been designed, fabricated and characterized. The fabrication process for stainless steel micromachined devices keeps the membrane and substrate being at the environment of 8.65MPa pressure and $175^{\circ}C$ for a half hour and then subsequently cooled to $25^{\circ}C$. Each sensor uses a stainless steel substrate, a laminated stainless steel film as a suspended movable plate and a fixed, surface micromachined back electrode of electroplated nickel. The finite element method is adopted to investigate residual stresses formed in the process. Besides, out-of-plane deflections are calculated under pressures on the diaphragm. The sensitivity of the device fabricated using these technologies is 9.03 ppm $kPa^{-1}$ with a net capacitance change of 0.14 pF over a range 0$\sim$180 kPa.

Minimization of Initial Deflection of Multi-Layered Micro-Actuator with Step-Up Structure (Step-Up 구조를 갖는 다층박막 초소형 구동소자의 초기변형 최소화에 관한 연구)

  • Lee, Hee-Joong;Kang, Shin-Ill
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.11
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    • pp.2415-2420
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    • 2002
  • In the present study, a new anchor design was proposed to minimize the initial deflection of micro multi-layer cantilever beam with step-up structure, which is a key component of thin film micro-mirror array. It is important to minimize the initial deflection, caused by residual stress, because it reduces the performance of the actuation. Theoretical and experimental studies were conducted to examine the cause of the initial bending deflection. It was found that the bending deflection at the anchor of the cantilever beam was the primary source of initial deflection. Various anchor designs were proposed and the initial deflections for each design were calculated by finite element analysis. The analysis results were compared with experiments. To reduce the initial deflection a secondary support was added to the conventional structure. The optimal shapes were obtained by simulation and experiment. It was found from the analysis that the ratio or horizontal and vertical dimensions of secondary support was the governing factor, which affected the initial deflection.

Residual Stress and Growth Orientation in $Y_2O_3$ Thin Films Deposited by Reactive Sputtering (반응 스퍼터링법으로 제조한 $Y_2O_3$ 박막의 잔류응력과 성장 방향성)

  • 최한메;최시경
    • Journal of the Korean Ceramic Society
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    • v.32 no.8
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    • pp.950-956
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    • 1995
  • Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

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Wear Behavior of TiN Coatings Deposited by Plasma Assisted Chemical Vapor Deposition (플라즈마 화학증착된 TiN박막의 마모특성)

  • In, Chi-Beom;Cheon, Seong-Sun
    • Korean Journal of Materials Research
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    • v.3 no.5
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    • pp.451-458
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    • 1993
  • Wear resistant titanium nirridc(TiN) coatings Were depositecd onto bearing stcel(AISI 52100) by plasma assisted chemical vapor deposition using the gaseous mixtyre of $TiCI_4, N_2, H_2$ and Ar. The In- fluences of the choorine on the crystallinity, microhardness, adhesion. Wear. property of coatings were studied. It was found that the TiN coatings had an outstanding resistance to wear but the mechanical properties of the coatings deteriorated with the increase in the chlorine content. From wear test, many cracks in the trailing edge which was under tensile stress was investigated.

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Measurement of Residual Stress of AlN Thin Films Deposited by Two-Facing-Targets (TFT) Sputtering System (Two-Facing-Targets (TFT) 스퍼터링장치를 이용하여 증착한 AlN박막의 잔류응력 측정)

  • Han, Chang-Suk;Kwon, Yong-Jun
    • Korean Journal of Materials Research
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    • v.31 no.12
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    • pp.697-703
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    • 2021
  • Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 10-2, 6 × 10-3, and 3 × 10-3, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

Automotive Tire Pressure Sensors with Titanium Membrane (티타늄 박막을 이용한 자동차 타이어 압력센서)

  • Chae, Soo
    • Journal of Practical Engineering Education
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    • v.6 no.2
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    • pp.105-110
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    • 2014
  • In this work, mechanical characteristics of titanium diaphragm have been studied as a potential robust substrate and a diaphragm material for automotive tire pressure sensor. Lamination process techniques combined with traditional micromachining processes have been adopted as suitable fabrication technologies. To illustrate these principles, capacitive pressure sensors based on titanium diaphragm have been designed, fabricated and characterized. The fabrication process for micromachined titanium devices keeps the membrane and substrate being at the environment of 20 MPa pressure and $200^{\circ}C$ for a half hour and then subsequently cooled to $24^{\circ}C$. Each sensor uses a stainless steel substrate, a laminated titanium film as a suspended movable plate and a fixed, surface micromachined back electrode of electroplated nickel. The finite element method is adopted to investigate residual stresses formed in the process. Besides, out-of-plane deflections are calculated under pressures on the diaphragm. The sensitivity of the fabricated device is $9.45ppm\;kPa^{-1}$ with a net capacitance change of 0.18 pF over a range 0-210 kPa.

The Effect of Magnetic Field Annealing on the Structual and Electromagnetic Properties of $Ni_{81}Fe_{19}$ thin Films for Magnetoresistaknce Heads (자기저항헤드용 $Ni_{81}Fe_{19}$ 박막의 구조 및 전자기적 특성에 미치는 자장중 열처리의 영향)

  • 김용성;이경섭;서수정;박현순;김기출;송용진
    • Journal of the Korean Magnetics Society
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    • v.6 no.4
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    • pp.242-250
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    • 1996
  • The effects of annealing in magnetic field after deposition on electromagnetic properties of $Ni_{81}Fe_{19}$ thin($400\;{\AA}$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity of the films was decreased below $300^{\circ}C$ due to stress relief and recrystallization, while increased at $400^{\circ}C$ due to grain growth and increasing the surface roughness. And then, $4{\pi}M_{s}$, was almost independent of annealing temperatures. Increasing the annealing temperature. the electrical resistivity of films was decreased from $37\;{\mu}{\Omega}cm$ to $24\;{\mu}{\Omega}cm$, the magnetoresistance was nearly a constant of about $0.6\;{\mu}{\Omega}cm$, and the MR ratio was increased from 1.5 % to 3.1 %. Therefore, It was shown that increasing the magnetoresistive ratio was mainly affected by decreasing the electrical resistivity. Considering the practical application of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at $300^{\circ}C$ in 400 Oe unidirectional magnetic field.

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Microstructure and Mechanical Properties of Cr-O-N Coatings Synthesized by Arc Ion Plating (Arc Ion Plating으로 합성된 Cr-ON 코팅막의 미세구조 및 기계적 성질)

  • Yun, Jun-Seo;Choe, Ji-Hwan;Kim, Gwang-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.192-193
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    • 2009
  • CrN 코팅막은 고온에서 치밀한 Cr2O3 확산방지막을 형성함으로 $800^{\circ}C$까지 기계적성질을 유지할 수 있다. 본 실험에서는 Ar, N2, 그리고 $O_2$ 가스 분위기에서 AIP(Arc Ion Plating) 기법에 의해 다양한 조성의 Cr-O-N 박막을 Si(200)과 AISI 304 기판 위에 증착되었다. Cr-O-N 코팅막은 47.4at% 미만의 산소함량을 포함 할 때까지 B1구조를 유지하였고 코팅막 내 산소함량 24.6at%에서는 강한 XRD peak intensification을 나타내었다. 47.4at%에서는 결정상을 전혀 찾아볼 수 없는 전이구조를 나타내었고, 그 이상의 산소함량에서는 Cr22O3 결정상을 나타내었다. Cr-O(17at%)-N 조성의 코팅막에서는 (200)배향의 Grain 크기 증가 및 압축잔류응력이 증가하였으나, 그 이상의 산소함량에서는 점차 감소하였다. Cr-O(24.6at%)-N 조성의 코팅막이 가장 높은 경도를 나타내었고, 산소함량이 증가할수록 점차 향상된 마찰특성을 보였다.

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