• Title/Summary/Keyword: 박막 밀도

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Microstructures and Electrical Properties of Zr Modified $({Ba_{1-x}},{Sr_x})TiO_3$ Thin Films (Zr이 첨가된 $({Ba_{1-x}},{Sr_x})TiO_3$ 박막의 미세구조와 전기적 성질)

  • Park, Sang-Sik
    • Korean Journal of Materials Research
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    • v.10 no.9
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    • pp.607-611
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    • 2000
  • Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

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The Effect of Various Process Conditions on the Physical Properties of Dense Silver Films, Prepared by Using Sputter Deposition on Polyester Substrate (Polyester 상에서 Sputter 증착되는 고 밀도 은경 박막의 물리적 특성에 미치는 공정조건 변화의 효과)

  • Ri, Ui-Jae;Hwang, Tae-Su
    • Korean Journal of Materials Research
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    • v.9 no.7
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    • pp.707-714
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    • 1999
  • To save electrical energy as much as 40 % for fluorescent lighting, the reflectors coated with silver reflective thin films recently became popular with higher reflectivities and long life. The thin films fabricated by using sputtering techniques are produced mainly in U.S.A. On the other hand, some silver films deposited by using evaporation methods show low adhesion in general, although the reflectivity is no problem. We have studied various PVD methods to obtain thin films with high reflectivity and adhesion on a substrate of polyester, for a couple of years. Silver films manufactured byusing evaporation showed the reflectivity of 96.4 % and the adhesion of $12 kg/\textrm{cm}^2$. while samples manufactured by using sputtering depicted the adhesion as much as $20 Kg/\textrm{cm}^2$ that is almost double, although their reflectivity was not much different. X-ray diffraction spectra for the sputtered films demonstrated a preferential growth on (111) plane and the cross-sections of the specimens revealed a dense columnar structure to result in the enhanced adhesion.

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ZnSe 박막 성장을 위한 Molecular Beam Epitaxy 성장 조건의 결정

  • Jeong, Myeong-Hun;Park, Seung-Hwan;Kim, Gwang-Hui;Jeong, Mi-Na;Yang, Min;An, Hyeong-Su;Jang, Ji-Ho;Kim, Hong-Seung;Song, Jun-Seok;Yao, Takafumi
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.990-994
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    • 2005
  • MBE growth conditions such as growth temperature, flux ration and growth rate for II-VI compound semiconductor growth has been studied. The growth temperature, flux ration and growth rate were tentatively controlled to 290$^{\circ}C$, 2, and 0.6 ${\mu}m$/h, respectively. From AFM result, relatively rough surface (RMS ${\sim}$ 2.9 nm) was observed. It was regarded as an indication of low growth temperature and high growth rate. XRD measurement shows that the film is relaxed, also the series of XRD measurements of different diffraction planes such as (002), (004), (115), (006) diffractions were performed to calculate the dislocation density in the film. The calculated dislocation density was found to be 8.30${\times}10^8$ dis/cm$^2$ which is compatible to the previous results.

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Modeling of Charge Density of Thin Film Charge Density by Using Neural Network and Genetic Algorithm (유전자 알고리즘과 일반화된 회귀 신경망을 이용한 박막 전하밀도 예측모델)

  • Kwon, Sang-Hee;Kim, Byung-Whan
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1805-1806
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    • 2007
  • Silicon nitride (SiN) 박막을 플라즈마 응용화학기상법을 이용하여 증착하였다. SiN박막의 전하밀도는 일반화된 회귀 신경망 (GRNN)을 이용하여 모델링하였다. PECVD 공정은 Box Wilson 실험계획표를 이용하여 수행하였다. GRNN 모델의 예측수행은 유전자 알고리즘 (GA)을 이용하여 최적화하였다. 최적화한 GA-GRNN 모델은 종래의 GRNN 모델과 비교하여, 약55%정도의 예측성능의 향상을 보였다.

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Surface morphology and electrical properties of ISZO films deposited by magnetron sputting (마그네트론 스퍼터링에 의해 증착한 ISZO 박막의 표면 형상 및 전기적 특성)

  • Lee, Dong-Yeop;Lee, Jeong-Rak;Kim, Do-Geun;Lee, Geon-Hwan;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.04a
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    • pp.116-117
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    • 2007
  • In-Sn-Zn-O 박막을 2개의 케소드(DC, RF)를 이용해magnetron co-sputtering법으로 polycarbonate (PC)기판위에 성막하였다. ITO와 ZnO 타겟은 각각 DC와 RF power supply에 의해 스퍼터 되었다. ISZO 박막의 가장 낮은 비저항은 RF power 55W 일 때 얻을 수 있었고, 이것은 케리어 밀도의 증가에 의한 것이라 생각되어 진다.

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The Characteristics of Diamond-like Carbon Films Deposited by Low Frequency(60Hz) Plasma CVD at Room Temperature for Optical lens (광학렌즈를 위한 저주파(60Hz) 플라즈마 CVD로 실온에서 제작한 다이아몬드성 탄소 박막의 특성)

  • Kang, Sung Soo;Lee, Won Jin;Sung, Duk Yong
    • Journal of Korean Ophthalmic Optics Society
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    • v.1 no.1
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    • pp.23-28
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    • 1996
  • Hydrogenated amorphous carbon films were fabricated by low frequency(60Hz) Plasma enhanced Chemical vapor deposition(LF-PECVD) at room temperature. The LF_PECVD has a couple of advantages as follows: cheap, and the employment of low power density makes the damage of samples small. The a-C:H films deposited in this work were highly transparent(99%), highly resistance(109-1011${\Omega}$-cm), and very uniform. The samples were deposited by the decomposition of CH4 and H2 mixing gas in the pressure rate range of 1% to 30%. The deposition rates, optical gap, and hydrogen contents are increased with CH4 contents.

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Preparation and Electrical Properties of $(Ba_{1-x},\;Sr_x)TiO_3$ Thin Film by Metal-Organic Chemical Vapor Deposition (유기 금속 화학 증착법에 의한 $(Ba_{1-x},\;Sr_x)TiO_3$ 박막의 제조 및 전기적 특성)

  • Yun, Jong-Guk;Yun, Sun-Gil
    • Korean Journal of Materials Research
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    • v.5 no.7
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    • pp.816-819
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    • 1995
  • (Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/cm.cm.

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Grid를 이용한 고밀도 플라즈마 소스의 이온 특성 연구

  • Byeon, Tae-Jun;Gwon, A-Ram;Kim, Seung-Jin;Kim, Jeong-Hyo;Park, Min-Seok;Jeong, U-Chang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.497-497
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    • 2012
  • 산업의 발전함에 따라 고기능성 박막의 수요가 증가하고 있으며, magnetron sputtering, e-beam evaporation, ion beam 등을 이용한 박막 증착에 대한 연구가 많이 진행되고 있다. 그러나 기존 방법만으로는 박막 접착계면의 불균일로 인해 고기능성 박막 성장이 어렵다는 단점을 가지고 있다. 이러한 문제를 해결하기 위하여 박막 공정 중 고밀도 플라즈마 소스(high density plasma source)를 통해 추가적인 에너지를 인가하여 박막의 밀도를 bulk 수준으로 증가시키고 내부 응력을 조절하는 연구에 대한 관심이 커지고 있다. 특히 grid를 이용하여 플라즈마 내 이온의 입사에너지를 증가시킴으로써, 기존 공정보다 고기능성 박막을 구현할 수 있다. 본 연구에서는 RF power를 이용한 inductively coupled plasma를 통해 플라즈마를 생성시킨 후 grid에 DC power를 인가하는 플라즈마 소스를 개발하였으며, 시뮬레이션을 통해 plasma density와 ion current density, ion energy 분석 및 grid 디자인을 하였다. 개발된 플라즈마 소스는 ion energy analyzer를 통해 RF power 및 grid에 인가하는 power의 세기에 따라 이온화 정도 및 이온의 입사에너지를 측정하였다.

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