• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.86-92
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• 2020

We confirmed the effects on the device performances and the charge injection characteristics of organic field-effect transistor (OFET) by selectively differently controlling the surface energies on the contact region of the substrate where the source/drain electrodes are located and the channel region between the two electrodes. When the surface energies of the channel and contact regions were kept low and increased, respectively, the field-effect mobility of the OFET devices was 0.063 ㎠/V·s, the contact resistance was 132.2 kΩ·cm, and the subthreshold swing was 0.6 V/dec. They are the results of twice and 30 times improvements compared to the pristine FET device, respectively. As the results of analyzing the interfacial trap density according to the channel length, a major reason of the improved device performances could be anticipated that the pi-pi overlapping direction of polymer semiconductor molecules and the charge injection pathway from electrode is coincided by selective surface treatment in the contact region, which finally induces the decreases of the charge trap density in the polymer semiconducting film. The selective surface treatment method for the contact region between the electrode and the polymer semiconductor used in this study has the potential to maximize the electrical performances of organic electronics by being utilized with various existing processes to lower the interface resistance.

• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.1-7
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• 1996

Optical intensity-type pressure sensor was fabricated by coupling optical fiber with a micromachined thin dielectric diaphragm, which consists of a 300 nm thick $SiO_{2}$ layer sandwiched between 150 nm thick top and bottom $Si_{3}N_{4}$ layers. At the wavelength of the sensor light source near $1.3\;{\mu}m$, the optical transmittance of the diaphragm was about 50 %, but it was decreased to a few percents by depositing $1,000\;{\AA}$ thick gold(Au) layer on the diaphragm, which is sufficient enough to be used as a light reflection layer of the sensor. From the optical output power-pressure characteristics of the sensors, it was found that the output power linearly decreased with increasing applied pressure from 0 to 77 torr regardless of the diaphragm size. The respective sensitivities were 0.52, 0.65, and 0.77 nW/torr for the diaphragm sizes of $3{\times}3$, $4{\times}4$, and $5{\times}5\;mm^{2}$, indicating that the sensitivity increases as diaphragm size decreases.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.220-226
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• 1997

An optical intensity-type pressure sensor has been fabricated by coupling multimode optical fiber with 100 nm-Au/30 nm-NiCr/150 nm-$Si_3N_4/300 nm-SiO_2/150 nm-Si_3N_4$ optical reflection layer supported by micromachined frame-shape silicon substrate, and its characteristics was investigated. For the application of $Si_3N_4/SiO_2/Si_3N_4$ diaphragm to the optical reflection layer of the sensor, NiCr and Au films were deposited on the backside of the diaphragm by thermal evaporation , respectively, and thus optical low caused by transmission in the reflection layer could be decreased to a few percents. Dielectric diaphragms with uniform thickness were able to be also reproduced because top- and bottom-$Si_3N_4$ layer of the diaphragm could automatically stop silicon anisotropic etching. The respective pressure ranges in which the sensor showed linear optical output power-pressure characteristics were 0~126.64 kPa, 0~79. 98 kPa, and 0~46.66 kPa, and the respective pressure sensitivities of the sensor were about 20.69 nW/kPa, 26.70 nW/kPa, and 39.33 nW/kPa, for the diaphragm sizes of 3$\times$3 $\textrm{mm}^2$, 4$\times$4 $\textrm{mm}^2$, and 5$\times$5 $\textrm{mm}^2$, indicating that the sensitivity increases as diaphragm size increases.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.5
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• pp.40-45
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• 2008

In this paper, a microstrip linear tapered slot antenna is designed. A tapered slot antenna(TSA) has many advantages such as low profile, low weight, easy fabrication, and compatibility with monolithic microwave integrated circuits(MMIC). In addition, it has demonstrated multi octave bandwidth, moderately high gain, and symmetrical E- and H-plane beam patterns. A feed network is implemented with transition between a microstrip and a slot line for the microstrip linear tapered slot antenna. The transition is consist of two sides. One side has a microstrip line, the other side has a slot line. The dimensions of the microstrip and slot line are ${\lambda}_m/4$ and ${\lambda}_s/4$ at the center of the cross section of the microstrip and slot line. In order to get broad bandwidth antenna characteristics, the tapered length is chosen as $4{\lambda}_o$ and termination width is chosen as $1.75{\lambda}_o$. Experimental results show that the microstrip tapered slot antenna has symmetrical E- and H-plane beam patterns with around 5GHz of bandwidth at center frequency of 5.0GHz.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.482-488
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• 2000

The deposition characteristics of Cu film by MOCVD using (hfac)Cu(1,5-COD)(1,1,1,5,5,5-hexafluro-2,4-pentadionato Cu(I) 1,5-cryclooctadiene) as a precursor have been investigated in terms of substrate conditions. Two different substrates such as air-exposed TiN and non-contaminated TiN were used for the MOCVD of Cu. MOCVD of Cu on the air-exposed TiN affected the nucleation rate of Cu as well as its growth, resulting in the Cu films having poor interconnection between particles with relatively small grains. On the other hand, in-situ MOCVD of Cu led to the Cu films having a significantly improved interconnection between particles with larger grains, indicating the resistivity as low as $2.0{\mu}{\Omega}-cm$ for the films having more than 1900$\AA$ thickness. Moreover, better adhesion of Cu films to the TiN by using in-situ MOCVD has been obtained. Finally, initial coalescence mechanism of Cu was suggested in this paper in terms of different substrate conditions by observing the surface morphology of the Cu films deposited by MOCVD.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.264-265
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• 2010

최근, nanorod나 nanowire와 같은 1차원의 나노구조가 나노디바이스로 각광을 받고 있다. [1] 특히 InN는 3족 질화물 반도체 중 가장 작은 밴드갭 에너지와 뛰어난 수송 특성을 가지고 있어 나노디바이스로의 응용에 적합한 물질이다. [2] 그러나 InN는 큰 평형증기압을 가지므로 쉽게 인듐과 질소로 분해되는 특성이 있어 나노구조로의 성장이 쉽지 않음이 알려져 있다. [3] 최근 연구결과에 따르면, InN 나노구조는 금속 catalyst를 사용한 방법이나, 기판 위 패턴을 이용하여 성장하는 방법, 염소를 사용한 방법이 널리 쓰이고 있다. [4,5,6] 그러나 이 방법들은 의도치 않은 불순물의 원인이 되거나 다른 추가적인 과정을 필요로 한다는 문제점도 일부 가지고 있다. 본 연구에서는 catalyst-free 유기 금속 화학 증착법 (MOCVD)를 이용하여 $Al_2O_3$ (0001)면 위에 InN nanostructure를 성장하였다. InN nanostructure 성장 시 트리메틸인듐(TMIn)과 암모니아($NH_3$) 를 전구체로 사용하였으며, 캐리어 가스로는 질소를 사용하였다. 또한 모든 샘플의 성장시간은 60분으로 고정하였으나, 성장 시 온도의 의존성을 보기 위해 $680-710^{\circ}C$ 의 온도범위에서 성장을 진행하였다. 그 결과 InN는 본 실험에서 적용된 성장온도범위 내에서 온도가 증가함에 따라 초기에는 columnar구조로 성장된 박막의 형태에서 wall이 배열된 형태로 변화하며 결국 $710^{\circ}C$ 의 온도에서 nanorod로 성장하게 된다. 성장된 InN의 나노구조는 X-선 회절 측정법, 주사 전자 현미경 그리고 투과 전자 현미경을 이용하여 각각의 구조적 특성을 분석하였다. X-선 회절 측정법과 주사 전자 현미경을 통한 분석결과에서는 이들 nanorods가 대부분 c 방향으로 수직하게 정렬되어 있음을 확인 할 수 있었다. 또한, $690^{\circ}C$ 에서 60분간 성장된 InN의 wall 구조의 두께는 200 nm, 길이는 $2-2.5\;{\mu}m$로 관찰되었으며, $710^{\circ}C$에서 60분간 성장된 InN nanorod의 지름은 150 nm, 길이는 $3\;{\mu}m$ 정도로 관찰되었다. 이를 통하여 볼 때 성장 온도가 InN의 나노구조 형성 시 표면의 모폴로지변화에 중요한 변수로 작용함을 알 수 있다. 본 발표에서는 이러한 표면 형상 및 구조 변화가 성장온도에 따른 관계성을 가짐을 InN의 분해와 성장의 경쟁적인 관계에 의해 논의할 것이다.

• Horticultural Science & Technology
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• v.29 no.3
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• pp.195-200
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• 2011

The growth, yield and quality of Sedum sarmentosum between soil and hydroponic cultivation were compared to produce high-quality shoots in summer season. The plants were collected from four places in Korea and cultivated in a plastic film house with 50% shading. A 1:1:1 mixtures of sand, upland soil and substrate (N-P-K: 330-220-400 $mg{\cdot}L^{-1}$) was used for soil cultivation, and a nutrient film technique (NFT) with Yamazaki-lettuce nutrient solution used for hydroponics. After 30 days of cultivation, plant height ranged from 18.4 to 21.8 cm and showed no significant difference between soil and hydroponic cultivation. Number of shoot, leaf length, leaf width, number of leaf, fresh weight, and dry weight significantly increased in hydroponics compared to those in soil cultivation. Fresh and dry weights in hydroponics were greater in 'Gunsan' and 'Wando' collections than those in other collections. Stem diameter and compression-force significantly increased in soil cultivation rather than hydroponics with significant differences among collections. However there were no significant differences in shoot bitterness and vitamin C content between cultivation methods or among the collections. Most mineral contents except Fe in hydroponics were higher than those in soil cultivation. K, Na, Zn contents in hydroponics were over 2 times higher than those in soil cultivation.

• Journal of Bio-Environment Control
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• v.11 no.4
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• pp.168-174
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• 2002

A new circulating hydroponic system was invented for oriental melons grown in the greenhouse. For developing nutrient solution management techniques, we examined the changes of nutrient contents of circulating solution in three different types of new hydroponic systems. The yield and fruit quality of oriental melons in Hydroponics were better than those in soil culture. The substrate culture was appropriate fer hydroponics of oriental melons, and NFT was turned to be the opposite due to the physiological disorder during hot seasons. Yamazaki's melon solution with EC 2.0dS.m$^{[-10]}$ was the most appropriate for oriental melons. The new circulating hydroponic system seemed to be appropriate for oriental melons because of the stable EC, pH and the macro- and micro-element contents. NO$_3$-N, Ca and Mg contents in the circulating solution kept a good balance in all types of hydroponics. However, p content, compared to other types, decreased by the degree of 1 me.L$^{[-10]}$ in perlite medium. K content showed irregular status in perlite but showed the stable status in cocopeat. Generally, microelements, except Mo, showed stable absorption in the substrate culture. However, in NET, most of the elements showed irregular absorption except B and Mn. Microelement absorption, especially Cu, Zn and Mo, decreased during hot seasons.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• Annual Conference on Human and Language Technology
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• 1999.10e
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• pp.441-446
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• 1999

본 연구는 접속사를 통한 텍스트 통합 과정이 논리적 추론 종류에 따라 다른 정보처리 과정 혹은 다른 종류의 단원적 구조(modular structure in language processing)에 의해 처리되는지를 조사하기 위해 실시되었다. 또한, 접속사를 통한 추론 과정이 실어증의 증상 종류에 따라 다른 종류의 언어정보처리 손상이 있는지를 평가하기 위해 실시되었다. 실험에 참가한 환자는 이해성 실어증환자(Wernicke aphasic), 전반성 실어증 환자(Global aphasic), 표현성 실어증 환자(Broca aphasic) 등이었다. en 종류의 과제를 이용하였다. 한 과제는 앞 뒤 문장을 논리적 관계성을 표현하는 접속사를 채워 넣는 과제였고 다른 과제는 접속사가 포함된 텍스트가 옳은지를 판단하는 정오 판단 과제였다. 실험재료 문장에 사용된 접속사는 추가적인 정보를 제공하는 '그리고'와 대등 관계를 나타내는 '그러나' 및 인과 관계를 표현하는 '그래서' 였다. 이 세 종류의 접속사는 각기 다른 논리적 관계성을 나타낸다. 실험 결과는 실어증 환자가 전반적으로 채워 넣기 과제에서 보다는 정오 판단 과제에서 더 많은 실수를 보였으며, 표현성 실어증 환자보다는 이해성 실어증 환자가 더 많은 오류를 보였다. 또한, 세 종류의 접속사 중에 '그리고'가 표함된 텍스트에서 더 많은 실수를 보였다. 이 연구에서 나타난 흥미 있는 결과는 표현성 실어증 환자는 '그러나' 접속사가 포함된 텍스트에서의 수행이 '그래서'가 포함된 경우에서보다 좋은 반면에 전반성 실어증 환자는 '그래서'를 포함하는 텍스트에서의 수행이 '그러나'를 포함하는 텍스트에서의 수행이 더 우수해서 이중해리(double dissociation)가 나타난다는 사실이다. 이 결과는 선후 문장이 어떤 종류의 논리적 관계성을 지니는가에 따라 다른 종류의 정보처리가 진행된다는 것을 암시하는 결과이다.>$\textrm{cm}^2$.。C로 비교적 양호한 초전박막의 전기적 특성을 나타내었다.(Mg+Fe)비를 갖고 전자에 비해 Al이 풍부한 환경에서 생성되었으며, 따라서 활석과 연관되지 않은 녹니석은 생성시 광체와 인접한 화강아질 편마암에 의해 주로영향을 받았을 것으로 생각된다. 녹니석의 이러한 2가지 화학조성상의 경향은 녹니석과 공존하는 운모류나 각섬석류들의 화학분석결과와도 잘 일치한다. 이러한 결과는 이 지역의 활석 광상이 초염기성암 기원의 사문암이 열수변질작용을 받아 생성되었음을 명확하게 지시하며, 따라서 활석 광석내에 존재하는 녹니석은 활석의 근원 광물로서 녹니석편암 및 녹니석 편마암 매의 녹니석이 활석화되고 남은 잔존광물이 아니라, 주변암에 의해 성분상의 영향을 받은 열수와 사문암과의 변질교대작용에 의한 활석화과정 중에 주로 생성된 것으로 추정된다. 이러한 결과는 연구지역의 활석광상이 초염기성암의 사문암화 작용과 활석화 작용의 두 가지 변질작용에 의해 형성되어졌음을 알려준다.농도 증가 없이 폐 조직에 약 50배 정도의 고농도 cisplatin을 투여할 수 있었으며, 또한 분리 폐 관류 시 cisplatin에 의한 직접적 폐 독성은 발견되지 않았다이 낮았으나 통계학적 의의는 없었다[10.0%(4/40) : 8.2%(20/244), p>0.05]. 결론: 비디오흉강경술에서 재발을 낮추기 위해 수술시 폐야 전체를 관찰하여 존재하는 폐기포를 놓치지 않는 것이 중요하며, 폐기포를 확인하지 못한 경우와 이차성 자연기흉에 대해서는 흉막유착술에 더 세심한 주의가 필요하다는 것을 확인하였다. 비디오흉강경수술은 통증이 적고, 입원기간이 짧고, 사회로의 복귀가 빠르며, 고위험군에 적용할 수 있고, 무엇보다도 미용상의 이점이 크다는 면에서 자연기흉에 대해 유용한 치료방법임에는 틀림이 없으나 개흉술에 비해 재발율이 높고 비용이 비싸다는 문제가 제기되고 있는 만큼