• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.17 no.12
• /
• pp.1353-1361
• /
• 1992

Holographic optical element(HOE) is fabricated with the properties of lightweight, thin thickness and interconnectivity for free space. Particularly, HOE for optical interconnection and multiple image processing should have a high efficiency and equal spot intensity, Nonlinear equations for 2-dimensional binary phase grating(BPG) structure is solved by computer simulation based on modified Newton method. Computer-generated pattern drawn by plotter is scaled down and translated into the microfilm. After contact printing between the microfilm and silver halide hologram film, phase diffraction grating produces the $5{\times}5$ multiple spots. Experimental results are shown that bleached phase grating has a high efficiency and equal focused beams except central zero order.

• Journal of the Korean Society for Heat Treatment
• /
• v.25 no.1
• /
• pp.1-5
• /
• 2012

The purpose of this study is to prepare a high strength fiberglass reinforced metal. Aluminum covering was carried out over carbon materials such as carbon fiber in order to increase their wettability to molten metals such as aluminum. A sputtering apparatus with a cylindrical target was fabricated to carry out the covering. Sputtering was caused by glow discharge between the target and the two anode plates attached to its top and bottom. As the substrate for preliminary test, a thin carbon wire was used instead of carbon fiber, and the wire was placed at the central axis of the target. Aluminium coating was formed on the whole surface of the substrate. The formation rate and structure of coating were varied by controlling the electrical potential of substrate. When the substrate was electrically isolated, coating with columnar structure was formed with a formation rate of $15{\mu}m/hr$. In case of grounded substrate, coating with amorphous structure was formed with a formation rate of $7{\mu}m/hr$.

• Progress in Superconductivity
• /
• v.9 no.2
• /
• pp.173-176
• /
• 2008

[ $MgB_2$ ] films grown by hybrid physical chemical vapor deposition under appropriate growth conditions commonly exhibit columnar grain structure. The grain boundaries between adjacent columnar grains have been reported to be good flux pinning centers. In this work, we measured the angular dependence of critical current density ($J_c$) and observed the enhanced flux pinning when an external magnetic field was aligned parallel to the columnar direction. This $J_c$ was almost comparable to the $J_c$ for intrinsic pinning case up to 1 T at low temperatures, indicating that grain boundary pinning is very effective. At high fields, however, $J_c$ decreased rapidly resulting from the fact that the density of flux pinning centers provided by grain boundaries was outnumbered by the flux density.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.38-38
• /
• 2018

TiMoN 코팅층은 우수한 내마모 특성과 낮은 마찰계수를 보여 많은 연구가 진행되고 있다. 본 연구에서는 음극아크 증착으로 질소 가스 유량, 아크 전류, 기판 전압 등 공정 변수를 제어하여 TiMoN 코팅층을 스테인리스와 초경 기판 위에 제조하고 색상, 미세구조, 경도 등 물리적 특성을 평가하였다. TiMo 타겟은 Mo가 약 8 at.% 함유되어 있으며 직경은 80 mm이었다. 색차계를 이용하여 TiMoN 코팅층의 색상을 분석한 결과, 질소 유량이 증가할수록 $a^*$와 $b^*$ 값이 증가하는 경향을 확인하였다. 질소 유량 90 sccm으로 제조한 TiMoN 코팅층은 TiN 코팅층과 유사한 색상을 보였다. TiMoN 코팅층의 조성을 에너지분산형 분광기(energy dispersive spectroscopy)로 분석한 결과, 타겟과 유사한 조성을 보였다. TiMoN 코팅층의 단면을 주사전자현미경으로 관찰한 결과, 주상정 형성이 확인되었으며 코팅층 표면에는 음극 아크 공정 시 발생하는 거대입자가 발견되었다. 질소 유량 50 sccm으로 제조한 TiMoN 코팅층은 약 3000 Hv의 경도 값을 보였다. X-선 분광기로 TiMoN 코팅층의 결정성을 분석한 결과, TiN과 유사한 합금상이 형성된 것을 확인할 수 있었다. TiMoN 코팅층은 TiN과 유사한 색상을 보였으며 경도는 TiN보다 높은 값을 보여 절삭공구, 금속 가공용 부품 등 고경도 코팅층으로 활용이 가능할 것으로 판단된다.

• Proceedings of the KIEE Conference
• /
• 1998.07a
• /
• pp.337-339
• /
• 1998

This paper deals with the design and fabrication of a novel superconducting power supply system, and characteristics have been analyzed through experiments. Superconducting power supply consists of rotating and static parts, and superconducting magnet. In this experiment, the current-pumping characteristics have been analyzed with superconducting sheets placed in parallel within the static part of the machine. In addition, in order to observe the 3-dimensional flux distribution in the superconducting sheet, several hall-sensors were placed in it. With the flux distribution acquired, the effect of the flux on the superconducting sheet during the process of current pumping have been analyzed. Also, general operational characteristics of the superconducting power supply system have been investigated on the basis of the current and voltage data and magnetic field values acquired through the experiments. In this experiment, maximum pumping current has been achieved to about 1280 amps.

• Korean Journal of Materials Research
• /
• v.24 no.7
• /
• pp.344-350
• /
• 2014

Metal films (i.e., Ti, Al and SUH310S) were prepared in a magnetron sputtering apparatus, and their cross-sectional structures were investigated using scanning electron microscopy. The apparatus used consisted of a cylindrical metal target which was electrically grounded, and two anode rings attached to the top and to the bottom of the target. A wire was placed along the center-line of the cylindrical target to provide a substrate. When the electrical potential of the substrate was varied, the metal-film formation rate depended on both the discharge voltage and the electrical potential of the substrate. As we made the magnetic field stronger, the plasma which appeared near the target collected on the plasma wall surface and thereby decreased the bias current. The bias current on the conducting wire was different from that for cation collection. The bias current decreased because the collection of cations decreased when we increased the magnetic-coil current. When the substrate was electrically isolated, the films deposited showed a slightly coarse columnar structure with thin voids between adjacent columns. In contrast, in the case of the grounded substrate, the deposited film did not show any clear columns but instead, showed a densely-packed granular structure. No peeling region was observed between the film and substrate, indicating good adhesion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.8
• /
• pp.616-621
• /
• 2011

In this paper, CdS thin films, which were widely used window layer of the CdTe and the Cu(In,Ga)$Se_2$ thin film solar cell, were grown by chemical bath deposition, and effects of pH of reaction solution on the structural and optical properties were investigated. For pH<10.5, as the pH of reaction solution was higher, the deposition rate of CdS films was increased by improving ion-by-ion reaction in the substrate surface and the crystallinity of the films was improved. However, when the pH was higher than 10.5, the deposition rate was decreased because of smaller $Cd^{2+}$ ion concentration in the reaction solution. Also, the crystallinity of the films were deteriorated. The CdS films deposited at lower pH showed poor optical transmittance due to adsorbed colloidal particles, while the transmittance was improved for higher pH.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1571-1573
• /
• 2003

Diamond films including nanocystalline and graphite phase are grown by microwave plasma chemical vapor deposition using $N_2$ additives and negative substrate bias at growth step. The microstructure of the films is controlled by changing $N_2$ gas ratio and negative bias. Defects and grain boundaries between diamond and graphite are proposed to be crucial factors for forming the conducting path of electron emissions. The effect of growth parameters on the film microstructure are investigated by Raman spectroscopy and scanning electron microscopy(SEM). Electron emission characteristics are also examined in terms of the film growth conditions.

• 한국신재생에너지학회:학술대회논문집
• /
• 2006.06a
• /
• pp.228-231
• /
• 2006

This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.

• Journal of the Korean Magnetics Society
• /
• v.13 no.3
• /
• pp.97-102
• /
• 2003

Synthetic ferrimagnetic layer (SyFL) with structure NiFe/Ru/NiFe which can be applied high density TMR device in free layer were prepared by an inductively coupled plasma (ICP) helicon-sputter. We proposed a model of predicting coercivity (H$\_$c/), spin-flopping field (H$\_$sf/), and saturation field (H$\_$s/) as a function of Ru thicknesses, from the equilibrium state of energies of Zeeman, exchange, and uniaxial anisotropy. We fabricated the samples of Ta(50 ${\AA}$)/NiFe(50${\AA}$)nu(4∼20${\AA}$)NiFe(30 ${\AA}$)/Ta(50${\AA}$), and measured the M-H loops with a superconduction quantum interference device (SQUID) applying the external field up to ${\pm}$ 15 kOe. The result was well agreed with the proposed model, and reveal K$\_$u = 1000 erg/㎤, J$\_$ex/ =0.7 erg/$\textrm{cm}^2$. We report that H$\_$c/ below 10 Oe is available, and R$\_$u/ thickness range should be in 4-10 ${\AA}$ for MRAM application. Our result implies that permalloy layers may lead to considerable magnetostriction effect in SyFL and intermixing in NiFe/Ru interfaces.