• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.228.2-228.2
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• 2013

본 논문은 InN와 GaN를 교대로 증착하는 교번성장법(Alternate Growth Method)을 이용해 형성한 높은 인듐(Indium) 조성을 갖는 InGaN (HI-InGaN) 구조의 열처리(Rapid Thermal Annealing, RTA) 온도 및 시간에 대한 구조와 광학적 특성을 Double Crystal X-ray Diffraction (DCXRD), Transmission Electron Microscopy와 Photoluminescence (PL) 장비를 사용하여 분석한 결과를 보고한다. DCXRD 스펙트럼에서 HI-InGaN 박막은 GaN(0002)로부터 $2.98^{\circ}$ 분리된 위치에서 회절 신호를 관찰 할 수 있다. 그리고 GaN와 HI-InGaN 신호 사이의 넓은 범위에서 미약하지만 신호가 관찰 되는데, 이는 InN와 GaN 계면에서 발생하는 상호확산 확률의 차이에 기인한 In 조성이 다른 InGaN 신호로 해석할 수 있다. 열처리 온도를 $775^{\circ}C$로 고정하고 시간을 10, 20, 30초로 각각 변화시켜 RTA를 진행한 DCXRD 스펙트럼에서 GaN(0002)로부터 $0.7{\sim}1.1^{\circ}$ 떨어진 위치에서 InGaN 피크를 확인 할 수 있다. RTA 시간이 증가 할수록 HI-InGaN 신호의 위치가 GaN 피크 방향으로 이동하며, 세기가 증가하는 것을 확인 할 수 있다. HI-InGaN의 PL 스펙트럼에서 상온 발광파장은 1369 nm 이며, 반치폭(Line-width)은 51.02 nm을 보였다. RTA 수행 후 발광파장에 따른 광세기가 각각 달라졌으며, 특히 900 nm 부근의 신호가 상대적으로 크게 증가하는 것을 확인할 수 있었다. RTA에 따른 HI-InGaN의 구조 및 광학적 특성 변화를 InN와 GaN 계면에서 In, Ga 원자의 상호확산 효과현상으로 논의할 예정이다.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.587-590
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• 2002

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Korean Journal of Metals and Materials
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• v.48 no.6
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• pp.565-569
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• 2010

We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of $4.70{\times}10^{-4}$, $5.95{\times}10^{-2}$, $4.85{\times}10^{-1}\;{\Omega}cm^{2}$ on p-GaN when annealed at $600{^{\circ}C}$ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at $600{^{\circ}C}$ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved.

• Transactions of Materials Processing
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• v.28 no.1
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• pp.43-48
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• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• Korean Journal of Materials Research
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• v.29 no.9
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• pp.553-558
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• 2019

$Cu_2ZnSn(S,Se)_4(CZTSSe)$ thin film solar cells areone of the most promising candidates for photovoltaic devices due to their earth-abundant composition, high absorption coefficient and appropriate band gap. The sputtering process is the main challenge to achieving high efficiency of CZTSSe solar cells for industrialization. In this study, we fabricated CZTSSe absorbers on Mo coated soda lime glass using different pressures during the annealing process. As an environmental strategy, the annealing process is performed with S and Se powder, without any toxic $H_2Se$ and/or $H_2S$ gases. Because CZTSSe thin films have a very narrow stable phase region, it is important to control the condition of the annealing process to achieve high efficiency of the solar cell. To identify the effect of process pressure during the sulfo-selenization, we experiment with varying initial pressure from 600 Torr to 800 Torr. We fabricate a CZTSSe thin film solar cell with 8.24 % efficiency, with 435 mV for open circuit voltage($V_{OC}$) and $36.98mA/cm^2$ for short circuit current density($J_{SC}$), under a highest process pressure of 800 Torr.

• Korean Journal of Materials Research
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• v.29 no.9
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• pp.567-577
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• 2019

Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of $150{\sim}550^{\circ}C$ with alkyl/amine or chloride precursors. Due to the low reactivity with $NH_3$ reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.256-261
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• 2021

Indium-doped Mg_0.05Zn_0.95O thin films were deposited on glass substrates by a sol-gel method. Three types of indium precursors such as indium chloride, indium acetate, and indium nitrate were used as doping sources. Physical properties of fabricated thin films were analyzed through XRD (x-ray diffraction), UV-vis spectrophotometer, Hall effect measurement, and EDS (energy dispersive x-ray spectroscopy). All In-doped thin films grown in this study exhibited a preferred orientation of (002) with over 80% transmittance. The results showed that the Mg_0.05Zn_0.95O thin film from indium chloride as the indium precursor has higher crystallinity and transmittance with lower resistivity when compared with those from other indium precursors.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.96-101
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• 2022

The effects of the growth temperature on the structural, optical, and morphological properties of BaWO₄:Sm³⁺ phosphor thin films were investigated. The BaWO₄:Sm³⁺ thin films were grown on quartz substrates at several growth temperatures by radio-frequency magnetron sputtering. All the thin films crystallized in a tetragonal structure with a main BaWO₄ (112) diffraction peak. The 830 nm-thick BaWO₄:Sm³⁺ thin films grown at 300 ℃ exhibited numerous polygon-shaped particles. The excitation spectra of BaWO₄:Sm³⁺ thin films consisted of a broad excitation band in the 200-270 nm with a maximum at 236 nm due to the O^2--Sm³⁺ charge transfer and two small bands peaked at 402 and 463 nm, respectively. Under 236 nm excitation, the BaWO₄:Sm³⁺ thin films showed an intense red emission peak at 641 nm due to the ⁴G_5/2→⁶H_9/2 transition of Sm³⁺, indicating that the Sm³⁺ ions occupied sites of non-inversion symmetry in the BaWO₄ host lattice. The highest emission intensity was observed for the thin film grown at 300 ℃, with a 51.8% transmittance and 5.09 eV bandgap. The average optical transmittance in the wavelength range of 500-1100 nm was increased from 53.2% at 200 ℃ to 60.8% after growing at 400 ℃. These results suggest that 300 ℃ is the optimum temperature for growing redemitting BaWO₄:Sm³⁺ thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.74-80
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• 2023

Gallium oxide (Ga₂O₃) thin films were grown on c-, a-, m-, r-plane sapphire substrates using a mist chemical vapor deposition system. Various growth temperature range of 400~600℃ was applied for Ga₂O₃ thin film deposition. Then, several structural properties were characterized such as film thickness, crystal phase, lattice orientation, surface roughness, and optical bandgap. Under the certain growth temperature of 500℃, all grown Ga₂O₃ featured rhombohedral crystal structures and well-aligned preferred orientation to sapphire substrate. The films grown on c-and r-plane sapphire substrates, showed low surface roughness and large optical bandgap compared to those on a-and m-plane substrates. Therefore, various sapphire orientation can be potentially applicable for future Ga₂O₃-based electronics applications.