• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.138-143
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• 2016

The designed and fabricated millimeter-wave security screening system receives radiation energy from an object and a human body. The imaging system consist of sixteen array antennas, sixteen four-stage LNAs, sixteen detectors, an infrared camera, a CCD camera, reflector, and a focusing lens. This system requires high sensitivity and wide bandwidth to detect the input thermal noise. The LNA module of the system has been measured to have 65.8 dB in average linear gain and 82 GHz~102 GHz in bandwidth to enhance the sensitivity for thermal noise, and to receive it over a wide bandwidth. The detector is used for direct current (DC) output translation of millimeter-wave signals with a zero bias Schottky diode. The lens and front-end of the millimeter-wave sensor are important in the system to detect the input thermal noise signal. The frequency range in the receiving sensitivity of the detectors was 350 to 400 mV/mW at 0 dBm (1 mW) input power. The developed W-band imaging system is effective for detecting and identifying concealed objects such as metal or plastic.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.10 s.352
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• pp.90-97
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• 2006

We report our research work on the millimeter-wave broadband amplifier integrating the shunt peaking technology with the cascode configuration. The millimeter-wave broadband cascode amplifier on MIMIC technology was designed and fabricated using $0.1{\mu}m\;{\Gamma}-gate$ GaAs PHEMT, CPW, and passive library. The fabricated PHEMT has shown a transconductance of 346.3 mS/mm, a current gain cut off frequency ($f_T$) of 113 GHz, and a maximum oscillation frequency ($f_{max}$) of 180 GHz. To prevent oscillation of designed cascode amplifier, a parallel resistor and capacitor were connected to drain of common-gate device. For expansion of the bandwidth and flatness of the gain, we inserted the short stub into bias circuits and the compensation transmission line between common-source device and common-gate device, and then their lengths were optimized. Also, the input and output stages were designed using the matching method to obtain the broadband characteristic. From the measurement, we could confirm to extend bandwidth and flat gain by integrating the shunt peaking technology with the cascode configuration. The cascode amplifier shows the broadband characteristic from 19 GHz to 53.5 GHz. Also, the average gain of this amplifier is about 6.5 dB over the bandwidth.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.339-342
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• 2004

본 논문은 밀리미터파 대역 무선통신 시스템 송신부의 응용을 위해 CPW 구조를 이용하여 V-band용 상향 주파수 혼합기와 2단 구동증폭기를 설계$\cdot$제작하였다. 능동소자는 본 연구실에서 제작한 $0.1{\mu}m$ 게이트 GaAs Pseudomorphic HEMTs(PHEMTs)를 사용하였으며 입$\cdot$출력단은 CPW를 사용해 정합 회로를 설계하였다. 제작된 상향 주파수 혼합기는 LO power 5.4 dBm, 2.4 GHz IF 신호를 -10.25 dBm으로 입력하였을 때 Conversion Loss 1.25 dB, LO-to-RF Isolation은 58 GHz에서 13.2 dB의 특성을 나타내었다 2단 구동 증폭기는 측정결과 60 GHz에서 S21 이득 13 dB, $58\;GHz\;\~\;64\;GHz$ 대역에서 S21 이득 12 dB 이상을 유지하는 광대역 특성을 얻었고 증폭기의 Pl dB는 3.8 dBm, 최대 출력전력은 6.5 dBm의 특성을 얻었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.261-268
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• 2016

In this paper, dual-polarized monopulse cassegrain antenna for W-band millimeter-wave seeker was proposed and the performances were verified by the measured results of the fabricated antenna. Dual-polarized monopulse Cassegrain antenna consists of main/subreflector, dual-polarized feed horn and monopulse comparator. The proposed feed horn has $2{\times}2$ array square waveguide feeding structure to make monopulse signals and it was designed using 90 degree rotational symmetric structure to receive dual-polarized signals. At the sum and difference channel, the measured vertical and horizontal polarization radiation pattern were similar. Measurement gains are 35.1 dBi for v-pol. and 35.6 dBi for h-pol. at the center frequency with 0.5dBi difference between each polarization and the side lobe level is below -21.6 dB.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.497-498
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• 2011

In 21 century, we use a variety of new wireless technologies focuses on broadcasting and Communications. Because of widely spread wireless-service, demand a lot of frequency. It requires various wireless access technologies. Especially UWB, SER, Millimeter Wave etc. Among them, UWB can use wide Frequency band, because it is different from Non-traditional approach which Frequency Band Using the exclusive rights granted by. Furthermore, it does not cause interference to other existing frequency, therefore this technology is attracting attention. In this paper, describe study on a UWB technology, design about useable antenna for UWB communication.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.12-17
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• 1999

In this paper, we proposed a novel CB-CPW(Conductor Backed CPW) for suppression of crosstalk caused by PPL(Parallel Plate Line) mode in the millimeter wave frequency. The proposed structure is formed by the GaAs main substrate attached on the Si lossy layer. The PPL mode can be suppressed by the Si lossy layer of conductivity ${\sigma}$, and it reduces the crostalk between the nearby transmission lines. Using 200 um thick Si substrate of ${\sigma}$ = 30S/m, as the lossy layer, the crosstalk can be suppressed below - 40 dB at 60 GHz. The proposed method is costly effective because inexpensive Si wafer is employed to suppress the PPL mode, and it can be used in the various types of millimeter wave applications.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.11
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• pp.34-39
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• 2002

In this paper, we proposed novel photonic bandgap(PBG) structure using EGP(Elevated Ground Plane) and via in ceramic substrate of microstrip line. From analysis result, the proposed PBG structure is reduced 52.5% at size and increased 45 % at bandwidth compared to typical planar PBG structure. It is also reduced 32 % at size and improved more than 8 dB at power loss compared to typical multilayer DGS(Defected Ground Structure). The proposed PBG structure also can be used bandstop and lowpass filter and it will be useful for small microwave integrated circuit and module development.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.41-46
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• 2008

We report a high gain D-band(110 - 140 GHz) MMIC drive amplifier based on $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The amplifier shows an excellent $S_{21}$ gain characteristic greater than 10 dB in a millimeterwave frequency of 110 GHz, Also the amplifier has good reflection characteristics of a $S_{11}$ of -3.5 dB and a $S_{22}$ of -6.5 dB at 110 GHz, respectively The high performances of the MMIC drive amplifier is mainly attributed to the characteristics of the MHEMTs exhibiting a maximum transconductance of 760 mS/mm, a current gain cut-off frequency of 195 GHz and a maximum oscillation frequency of 391 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.266-269
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• 2018

A compact Q-band waveguide-to-microstrip transition for UAV(Unmanned Aerial Vehicle) radiometer applications is presented. The key features of this transition are simplicity, compactness, easy matching, and lower sensitivity to the dimensions and fabrication tolerances. The simple E-plane patch-type design is insensitive to the backshort cavity enclosure and misalignment between the waveguide and microstrip substrate. The primary parameters are optimized using a three-dimensional(3D) electromagnetic simulator(ANSYS HFSS). It exhibited better than 20-dB return loss at mid-band frequencies with less than 1-dB insertion loss for the back-to-back transition, and a return loss better than 15 dB over the frequency range of 36 GHz to 42 GHz.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.4
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• pp.129-133
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• 2020

In this paper, a temperature compensation circuit is presented in order to mitigate gain variability due to temperature in the W-band low-noise amplifier (LNA). The proposed cascode temperature compensation bias circuit automatically controls gate bias voltages of the common-source LNA in order to suppress variations of small-signal gain. The designed circuit was realized in a 100-nm GaAs pHEMT process. The simulated voltage gain of W-band LNA including the proposed bias circuit is >20 dB with gain variability less than ±0.8 dB in the range of temperatures between -35 to 71℃. We expect that the proposed circuit contributes to millimeter-wave receivers for stable performances in radar applications.