• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1005-1010
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• 1997

ZnS:Mn thin film was made by coevaporation with Electron Beam Evaparation(EBE) method. And structural and optical characteristics of ZnS:Mn thin films were investigated by substrate temperature annealing temperature and dopant Mn. When ZnS:Mn thin film was well deposited with cubic crystalline at substrate temperature of 30$0^{\circ}C$ its surface index was [111] and its lattice constant of a was 5.41$\AA$. Also When ZnA:Mn thin film was well made with hexagonal crystalline at substrate temperature of 30$0^{\circ}C$annealing temperature of 50$0^{\circ}C$and annealing time of 60min its miller indices were (0002) (1011), (1012) and (1120). And its lattice constant of a and c was 3.88$\AA$and 12.41$\AA$ respectively. Finally hexagonal ZnS:Mn thin film with dopant Mn of 0.5wt% had fundamental absorption wavelength of 342nm. And so its energy bandgap was about 3.62eV.

• Journal of Welding and Joining
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• 제7권4호
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• pp.30-37
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• 1989

Effect of heat treatment on mechanical properties of an overlay weldment was investigated. Over welding was carried out on the structural C-Mn mild steel substrate to take required test specimens. Shielded metal arc welding process with 13Cr-0.2Ni stick electrode was applied. The heat treatment temperatures and holding times were $450{\circ}C., 550{\circ}C., 650{\circ}C., 750{\circ}C., 850{\circ}C.$ and 0.5hr, 2hr, 10hr, respectively. Mechanical tests and microscopic inspection were also carried out to investigate welds soundness. Test results indicated that carbon migration was dominant near bonded zone. At temperature of around 650.deg. C, carburized layer and decarburized layer were formed remarkably along overlay welds region and C-Mn mild steel region, respectively. The wideth of these layers became wider with increasing heat treatment temperature and/or holding time at the elevated temperature, and this relationship agreed with Larson-Miller parameter. Side bending test results demonstrated that the crack free region of overlay welds could be deduced from the relationship between temperature and holding time.

• 한국재료학회지
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• 제13권11호
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• pp.717-720
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• 2003

Heavily $p^{ ＋}$-typed ($10^{20}$ $cm^{-3}$ ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr$_4$) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.

• 대한기계학회논문집A
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• 제30권9호
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• pp.1034-1040
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• 2006

Due to the need of increasing thermal efficiency, supercritical pressure and temperature have been utilized in power plants. It is well known that 9Cr1Mo steel is suitable fer use in power plants operating at supercritical conditions. Therefore, to ensure the safety and the soundness of the power plant, creep characterization of the steel is important. In this study, the creep characterization of the gCr1Mo steel using small punch creep(SP-Creep) test has been described. The applied load and the central displacement of the specimen in SP-Creep test have been converted to bearing stress and strain of uc, respectively. The converted SP-Creep curves clearly showed the typical three-stage behavior of creep. The steady-state creep rate and the rupture time of the steel logarithmically changed with the bearing stress and satisfied the Power law relationship. Furthermore, the Larson-Miller parameter of the SP-Creep test agreed with that of the tensile creep test. From the comparison with low Cr-Mo steels, the creep characteristics of 9Cr1Mo steel proved to be superior. Thus, it can be confirmed that the 9Cr1Mo steel is suitable for supercritical power plant.

• 한국진공학회지
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• 제15권2호
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• pp.152-161
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• 2006

일차원의 대칭성을 갖는 형판 위에서 Bi원자가 자발적으로 형성하는 나노 구조체의 원자 구조를 이해하기 위하여, 재구조 된 Si(5 5 12)을 Bi의 탈착 온도에 가까운 온도로 가열한 채 Bi를 흡착시키고 주사 터널링 현미경으로 그 원자 구조를 각 흡착 단계별로 규명하였다. 제일 먼저 Bi는 이 기판에 존재하는 여러 종류의 $[\bar{1}\;1\;0]$에 평행한 row들 중에서 기판과 결합력이 가장 약한 dimer row와 adatom row 만을 선택적으로 Bi-dimer row와 Bi-adatom row로 각각 치환한다. 이 과정에서 치환된 Bi는 Si과의 크기 차이로 인해 인접한 (337) subsection에 tensile stress를 인가하게 되고, 그 결과 (337) subsection 내의 tetramer row는 갈라져 dimer row와 adatom row로 변형되고, 이들 역시 Bi-dimer row와 Bi-adatom row로 각각 치환된다. 다음으로 이들 치환된 Bi-dimer row와 Bi-adatom row 위에 각각 Bi-dimer가 흡착하면 서로 마주보며 안정된 Bi-dimer pair를 이루며, 이 pair 역시 row를 이루고 둘째 층을 형성한다. 마지막으로 셋째 층의 Bi는 둘째 층의 마주보는 Bi-dimer pair 위에 흡착한 한 개의 Bi-dime이며 더 이상의 Bi는 쌓이지 않는다. 이와 같이 자발적으로 조립되는 Bi-dimer row의 형성 원인을 종합하면, 재구조 된 Si(5 5 12) 위에서 Bi의 선택적 반응, Bi와 Si의 크기 차이로 인한 표면 stress의 유발, Bi 원자 간의 안정된 결합형태 등을 들 수 있다.