• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.7-15
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• 2000

The purpose of this work is to evaluate the solderahility and characteristics of solder joints. Bridge defect of solder joint was examined in natural atmosphere and $N_2$ condition. Consequently, wettability was excellent for each of Sn-Pb plated Cu specimen, Sn plated Cu specimen, and Cu polished in $N_2$ condition. The wetting time in $N_2$ condition was shorter than that of natural atmosphere condition, showing the decreasing values of about 0.2~0.45 seconds. The max. wetting force under the $N_2$ condition was more increasing that of natural atmosphere condition, showing the increasing values of about 1.8~2.8 N. With the result of wetting balance test, the wetting time ($t_2$) and wetting farce according to increasing amount of $N_2$ from 10 1/min to 30 1/min, the wetting time ($t_2$) was reduced about 0.25 second and wetting force was increased about 2.3 N. In non-cleaning flux, when $N_2$ gas is applied, it is compensated to decrease of wettability. In the case of using the $N_2$ gas, the wettability was improved. The reason for improving wettability is due to preventing the formation of dross. The generation rate of bridge in $N_2$ condition decreased than that of natural atmosphere, and when the specimen had a fine pitch, the rate of bridge defects was considerably decreased in $N_2$ condition, showing the decreasing rate of 25~75%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.165-171
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• 2002

The study on the adsorption, the surface properties and the antibacterial effects of the metal-treated pitch based activated carbon fibers was carried out. From the adsorption studies on the series of metal-treated activated carbon fiber, the specific surface areas of the metal treated activated carbon fiber obtained from BET equation were in the range of 113.2~1574 $m^2$/g for the Ag-ACFs. And that of Cu treated ACF are distributed to 688.2-887.8 $\m^2$/g. And, the specific surface areas of the Ni-treated pitch based ACFs were in the range of 692.6~895.2 $\m^2$/g. From the ${\alpha}_s$- method, 0.06~1.1 cm^3/g of the micropore volumes were obtained from Ag-ACFs. And, 0.1~0.2 cm^3/ and 0.2~0.6 cm^3/g of the micropore volumes were obtained from Cu and Ni-ACFs, respectively. And, from the SEM morphology results, it was observed that the surface of activated carbon fiber are partially blocked and coated by metal after the treatment. Finally, from the antibacterial effects of metal-treated activated carbon fiber against E. coli, the areas of antibacterial effect become larger with the increase in mole ratio of metal treated. And, from the antibacterial effects using Shake flask method against E. coli, the percentage of the effects was 92.5~100 % and the antibacterial effect was increased with the increase in mole concentration of metal treated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.503-510
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• 2006

Readout circuit is to convert signal occurred in a defector into suitable signal for image signal processing. In general, it has to possess functions of impedance matching with perception element, amplification, noise reduction and cell selection. It also should satisfies conditions of low-power, low-noise, linearity, uniformity, dynamic range, excellent frequency-response characteristic, and so on. The technical issues in developing image processing equipment for focal plane way (FPA) can be categorized as follow: First, ultraviolet (UV) my detector material and fine processing technology. Second, ReadOut IC (ROIC) design technology to process electric signal from detector. Last, package technology for hybrid bonding between detector and ROIC. ROIC enables intelligence and multi-function of image equipment. It is a core component for high value added commercialization ultimately. Especially, in development of high-resolution image equipment ROIC, it is necessary that high-integrated and low-power circuit design technology satisfied with design specifications such as detector characteristic, signal dynamic range, readout rate, noise characteristic, ceil pitch, power consumption and so on. In this paper, we implemented a $8\times8$ FPA prototype ROIC for reduction of period and cost. We tested unit block and overall functions of designed $8\times8$ FPA ROIC. Also, we manufactured ROIC control and image boards, and then were able to verify operation of ROIC by confirming detected image from PC's monitor through UART(Universal Asynchronous Receiver Transmitter) communication.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.67-73
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• 2009

Compared to the chip-bonding process utilizing solder bumps, flip chip process using Cu pillar bumps can accomplish fine-pitch interconnection without compromising stand-off height. Cu pillar bump technology is one of the most promising chip-mounting process for RF packages where large gap between a chip and a substrate is required in order to suppress the parasitic capacitance. In this study, Cu pillar bumps and Sn bumps were electroplated on a chip and a substrate, respectively, and were flip-chip bonded together. Contact resistance and chip shear force of the Cu pillar bump joints were measured with variation of the electroplated Sn-bump height. With increasing the Sn-bump height from 5 ${\mu}m$ to 30 ${\mu}m$, the contact resistance was improved from 31.7 $m{\Omega}$ to 13.8 $m{\Omega}$ and the chip shear force increased from 3.8 N to 6.8 N. On the contrary, the aspect ratio of the Cu pillar bump joint decreased from 1.3 to 0.9. Based on the variation behaviors of the contact resistance, the chip shear force, and the aspect ratio, the optimum height of the electroplated Sn bump could be thought as 20 ${\mu}m$.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.9-15
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• 2021

Miniaturization of semiconductor devices has recently faced a physical limitation. To overcome this, 3D packaging in which semiconductor devices are vertically stacked has been actively developed. 3D packaging requires three unit processes of TSV, wafer grinding, and bonding, and among these, copper bonding is becoming very important for high performance and fine-pitch in 3D packaging. In this study, the effects of Ti nanolayer on the antioxidation of copper surface and low-temperature Cu bonding was investigated. The diffusion rate of Ti into Cu is faster than Cu into Ti in the temperature ranging from room temperature to 200℃, which shows that the titanium nanolayer can be effective for low-temperature copper bonding. The 12nm-thick titanium layer was uniformly deposited on the copper surface, and the surface roughness (R_q) was lowered from 4.1 nm to 3.2 nm. Cu bonding using Ti nanolayer was carried out at 200℃ for 1 hour, and then annealing at the same temperature and time. The average shear strength measured after bonding was 13.2 MPa.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.91-97
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• 2022

The wettability and rheological properties of solder paste with the size of the solder powder were evaluated. To formulate the solder paste, three types of solder powder were used: T4 (20~28 ㎛), T5 (15~25 ㎛), and T6 (5~15 ㎛). The viscosities of the T4, T5, and T6 solder pastes at 10 RPM were 155, 263, and 418 Pa·s, respectively. After 7 days, the viscosity of the T4 solder paste slightly increased by 2.6% and that of T5 was increased by 20.6%. The viscosity of the T6 solder paste after 7 days could not be measured due to high viscosity. The viscosity variation with solder particle size also affected on the printability of the solder. In the case of the T4 solder paste, printability, slump, bridging, and soldering properties were excellent. On the other hand, T5 showed slight dewetting and solder ball defects. Especially, T6, which the smallest powder size, showed poor printability and dewetting at the edge of solder.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.8-16
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• 2023

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO₂ structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO₂ structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO₂. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.