• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.41-47
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• 2010

The effect of PCB and BGA pad designs was investigated on the mechanical property of Pb-free solder joints. The mechanical property of solder joint was tested by three different test methods of drop impact tests, bending impact test, and high speed shear test. Two kinds of pad design such as NSMD (Non-Solder Mask Defined) and SMD (Solder Mask Defined) were applied with the OSP finished Pb-free solder (Sn-3.0Ag-0.5Cu, Sn-1.2Ag-0.5Cu). in the drop impact test and bending impact test, the characterized lifetime showed the same tendency, and SMD design showed better mechanical property of solder joint than NSMD regardless of test method, which was due to the different crack path. The fracture crack on SMD pad was propagated along the intermetallic compound (IMC) layer of solder joint, while the fracture crack on NSMD pad propagated through upper edge of land which shields pattern. In the high speed shear test, pad lift occurred on the solder joint of NSMD. SMD/SMD combination of pad design consequently illustrated the best mechanical property of BGA/PCB solder joint, followed by SMD/NSMD, NSMD/SMD, and NSMD/NSMD.

• Journal of the Korean institute of surface engineering
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• v.38 no.6
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• pp.216-226
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• 2005

Pb-Free Technology was born with environmental problems of electronic component, Being connected by big and small project of every country. Also, in each country environment is connected and various standards of IEC, ISO, MIL, JIS, KS, JEDEC, EIAJ etc. All products can divide at solder part and finishing part These can tested each and synthetically divide. This research is reliability evaluation for three kind of ph-free SnCu solder plating solution and it's deposit. First, executed analysis about Pure Sn, SnCu solutions and plating surface by way similar to other plating solution analysis. Next, executed reliability about test method and equipment for reliable analyzer system construction. Next, data comparison and estimation, main estimation test method and item's choice. In this paper the systematic surface analysis and reliability for plating solutions and it's deposit in metal surface finishing processes could be shown.

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.11-16
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• 2002

As environmental concerns increasing, the electronics industry is focusing more attention on lead free solder alternatives. In this research, we have researched wettability of intermediate solder of Sn3Ag9Bi5In, which include In and Bi and has similar melting temperature to Sn37Pb eutectic solder. We investigated the wetting property of Sn3Ag9Bi5In. To estimate wettability of Sn3Ag9Bi5In solder on various substrates, the wettability of Sn3Ag9Bi5In solder on high-pure Cu-coupon was measured. Cu-coupon that plated Sn, Ni and Au/Ni and Si-wafer adsorbed Ni/Cu under bump metallurgy on one side. As a result, the wetting property of Sn3Ag9Bi5In solder is a little better than that of Sn37Pb and Sn3.5Ag.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.130-130
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• 2017

Au 합금 도금층은 내마모성 및 내식성이 우수하고 접촉저항이 낮기 때문에, 커넥터, 인쇄회로기판 등과 같은 전자부품의 접속단자부에 널리 적용되고 있다. 각 부품들을 효과적으로 전기적 신호를 통해 연결하기 위해서는 낮은 접촉저항이 요구되며, 이러한 Au 합금 도금층의 접촉저항은 합금 원소의 종류 및 함량, 용융 솔더와 전자부품을 고정시키는 표면실장공정에서 받는 theremal aging의 온도와 시간에 따라 변화된다. 현재 전자부품용 커넥터에 실시되고 있는 금 합금도금은 Au-0.3wt%Co합금, Au-0.2wt%Ni합금도금이 대부분 적용되고 있으며, 높은 순도(금 함유량 99.7wt%이상)로 인하여 금 사용량을 절감하기 어려운 실정이다. Sn은 Au와 높은 고용률을 갖는 합금을 형성하는 장점을 갖고 있기에 금 사용량 절감에 큰 기여를 할 수 있을 것으로 예상된다. 따라서 본 연구에서는 Sn을 합금 원소로 사용하여 높은 Sn함량을 갖는 Au 합금 도금층을 제작하고, 무연솔더의 융점보다 더 높은 온도인 533K에서 thermal aging을 실시하여, Sn함량별로 thermal aging에 따른 접촉저항과 솔더퍼짐성의 변화를 기존의 Co, Ni합금과 비교 조사하였다. 또한, 표면분석을 통하여 Au-Sn합금 도금층의 접촉저항이 변화하는 요인에 대해서도 고찰하였다. 표면적 $0.2dm^2$의 순수 동 시편 위에 약 $2{\mu}m$두께의 Ni도금을 실시한 후 Sn 함량을 다르게 준비한 도금 용액(Au 6g/L, Sn 1~8g/L)을 사용하여 Au-Sn합금 도금을 실시하였다. Au-Sn합금 도금층은 전류밀도 0.5ASD, 온도 $40^{\circ}C$에서 약 $0.1{\mu}m$두께가 되도록 도금하였으며, 두께는 형광X선 도금두께측정기로 측정하였다. 금 합금 도금층 내의 Sn함량은 Ti시편 위에 도금한 Au-Sn합금층을 왕수에 용해시킨 다음, ICP를 사용하여 분석하였다. Au-Sn합금 도금층의 접촉저항은 준비된 시편을 533K에서 1분 30초, 3분, 6분 간 열처리한 후, 5회 접촉저항을 측정하여 그 평균값으로 하중에 따른 금 합금 도금층의 접촉저항을 비교하였다. 솔더링성은 솔더볼을 합금 표면에 솔더페이스트를 이용하여 붙인 뒤 533K에서 30초간 열처리하고, 열처리 후 솔더볼의 높이 변화를 측정해 열처리 전 솔더볼의 높이에 비해 퍼진정도를 측정하였다. 또한, 도금층 내의 Sn함량에 따라서 접촉저항이 변화하는 요인을 분석하기 위해서 X선 광전자 분광기를 이용하여 도금층 표면의 정량 분석 및 화학적 결합상태를 분석하였다. ICP분석결과 Au-Sn합금층 내의 Sn함량은 도금용액의 조성별로 9~12wt% Sn 합금층이 형성된 것을 알 수 있었고 기존의 Au-Ni, Au-Co 합금층과 비교해 합금함량이 크게 증가된 것을 알 수 있었다. 또한 접촉저항 측정 결과, 기존의 Au-Ni, Au-Co합금층의 접촉저항과 비교했을 때 Au-Sn합금층의 접촉저항이 더 낮은 것을 알 수 있었다. 또한, 솔더퍼짐성 측정 결과 기존의 Au-Ni, Au-Co합금층과 비교해 솔더퍼짐성이 우수한 것을 확인할 수 있었다. 따라서 전자부품용 접점재료에 합금함량이 높은 Au-Sn합금층을 적용시키면 더 우수한 커넥터의 성능을 얻을 수 있을 뿐 아니라 경제적으로 큰 절약 효과를 기대할 수 있을 것으로 판단된다.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.218-220
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• 2006

Sn-3.0Ag-0.5Cu solder is widely used as micro-joining materials of flip chip package(FCP) because of the fact that it causes less dissolution and has good thermal fatigue property. However, compared with ternary electroplating in the manufacturing process, binary electroplating is still used in industrial field because of easy to make plating solution and composition control. The objective of this research is to fabricate Sn-3.0Ag-0.5Cu solder bumping having accurate composition. The ternary Sn-3.0Ag-0.5Cu solder bumping could be made on a Cu pad by sequent binary electroplating of Sn-Cu and Sn-Ag. Composition of the solder was estimated by EDS and ICP-OES. The thickness of the bump was measured using SEM and the microstructure of intermetallic-compounds(IMCs) was observed by SEM and EDS. From the results, contents of Ag and CU found to be at $2.7{\pm}0.3wt%\;and\;0.4{\pm}0.1wt%$, respectively.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.386-392
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• 2003

The electroplating process for a solder bump which can be applied for a flip chip was studied. Si-wafer was used for an experimental substrate, and the substrate were coated with UBM (Under Bump Metallization) of Al(400 nm)/Cu(300 nm)Ni(400 nm)/Au(20 nm) subsequently. The compositions of the bump were Sn-Cu and eutectic Sn-Pb, and characteristics of two bumps were compared. Experimental results showed that the electroplated thickness of the solders were increased with time, and the increasing rates were TEX>$0.45 <\mu\textrm{m}$/min for the Sn-Cu and $ 0.35\mu\textrm{m}$/min for the Sn-Pb. In the case of Sn-Cu, electroplating rate increased from 0.25 to $2.7\mu\textrm{m}$/min with increasing current density from 1 to 8.5 $A/dm^2$. In the case of Sn-Pb the rate increased until the current density became $4 A/dm^2$, and after that current density the rate maintains constant value of $0.62\mu\textrm{m}$/min. The electro plated bumps were air reflowed to form spherical bumps, and their bonded shear strengths were evaluated. The shear strength reached at the reflow time of 10 sec, and the strength was of 113 gf for Sn-Cu and 120 gf for Sn-Pb.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.315-321
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• 2005

Chip-on-glass technology to attach IC chip directly on the glass substrate of flat panel display was studied by using induction heating body in AC magnetic field. With applying magnetic field of 230 Oe at 14 kHz, the temperature of an induction heating body made with Cu electrodeposited film of 5 mm${\times}$5 mm size and $600{\mu}m$ thickness reached to $250^{\circ}C$ within 60 seconds. However, the temperature of the glass substrate was maintained below $100^{\circ}C$ at a distance larger than 2 mm from the Cu induction heating body. COG bonding was successfully accomplished with reflow of Sn-3.5Ag solder bumps by applying magnetic field of 230 Oe at 14 kHz for 120 seconds to a Cu induction heating body of 5mm${\times}$5mm size and $600{\mu}m$ thickness.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.253-258
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• 2005

Characteristics of electroplated Ni films such as grain size, resistivity, solder wetting angle, and growth rate of intermetallic compound were evaluated as a function of electroplating current density. With increasing the electroplating current density from $5\;mA/cm^2 $ to $40\;mA/cm^2 $, the nodule size on the Ni film surface decreased, grain refinement occurred, and resistivity increased from $7.37\mu\Omega-cm$ to $9.13\mu\Omega-cm$. Compared with Ni film processed at $40\;mA/cm^2 $, Ni films electroplated at $5\;mA/cm^2 $ and $10\;mA/cm^2 $ exhibited low resistivity, dense microstructure, and slow growth rate of intermetallic compound. Ni films electroplated at $5\;mA/cm^2 $ and $10\;mA/cm^2 $ are more suitable for Ni UBM application than that fabricated at $40\;mA/cm^2 $.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.123-123
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• 2012

최근 연구되고 있는 TSV(Through Silicon Via) 기술은 Si 웨이퍼 상에 직접 전기적 연결 통로인 관통홀을 형성하는 방법으로 칩간 연결거리를 최소화 할 수 있으며, 부피의 감소, 연결부 단축에 따른 빠른 신호 전달을 가능하게 한다. 이러한 TSV 기술은 최근의 초경량화와 고집적화로 대표되는 전자제품의 요구를 만족시킬 수 있는 차세대 실장법으로 기대를 모으고 있다. 한편, 납땜 재료의 주 원료인 주석은 주로 반도체 소자의 제조, 반도체 칩과 기판의 접합 및 플립 칩 (Flip Chip) 제조시의 범프 형성 등 반도체용 배선재료에 널리 사용되고 있다. 최근에는 납의 유해성 때문에 대부분의 전자제품은 무연솔더를 이용하여 제조되고 있지만, 주석을 이용한 반도체 소자가 고밀도화, 고 용량화 및 미세피치(Fine Pitch)화 되고 있기 때문에, 반도체 칩의 근방에 배치된 주석으로부터 많은 알파 방사선이 방출되어 메모리 셀의 정보를 유실시키는 소프트 에러 (Soft Error)가 발생되는 위험이 많아지고 있다. 이로 인해, 반도체 소자 및 납땜 재료의 주 원료인 주석의 고순도화가 요구되고 있으며, 특히 알파 방사선의 방출이 낮은 로우알파솔더 (Low Alpha Solder)가 요구되고 있다. 이에 따라 본 연구는 4인치 실리콘 웨이퍼상에 직경 $60{\mu}m$, 깊이 $120{\mu}m$의 비아홀을 형성하고, 비아 홀 내에 기능 박막증착 및 전해도금을 이용하여 전도성 물질인 Cu를 충전한 후 직경 $80{\mu}m$의 로우알파 Sn-1.0Ag-0.5Cu 솔더를 접합 한 후, 접합부 신뢰성 평가를 수행을 위해 고속 전단시험을 실시하였다. 비아 홀 내 미세구조와 범프의 형상 및 전단시험 후 파괴모드의 분석은 FE-SEM (Field Emission Scanning Electron Microscope)을 이용하여 관찰하였다. 연구 결과 비아의 입구 막힘이나 보이드(Void)와 같은 결함 없이 Cu를 충전하였으며, 고속전단의 경우는 전단 속도가 증가할수록 취성파괴가 증가하는 경향을 보였다. 본 연구를 통하여 전해도금을 이용한 비아 홀 내 Cu의 고속 충전 및 로우알파 솔더 볼의 범프 형성이 가능하였으며, 이로 인한 전자제품의 소프트에러의 감소가 기대된다.

• Resources Recycling
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• v.30 no.3
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• pp.47-54
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• 2021

Palladium present in colloidal-type plated spent catalyst solution that is used in electroless plating process has not been recovered but discharged as wastewater so far. Recyclig of paladium in colloidal-type plated spent catalyst solution is achieved with this study. This study presents the estimation of resource consumption and GHG emissions during the recycling and disposal of palladium in the plated spent catalyst solution using life cycle assessment. The reduction of resources and GHG are also estimated. Based on the palladium amount of 1 kg during disposal, the GHG emission amount was estimated to be 9.67E+03 kgCO₂eq., and the amount of resource consumption was 3.94E+01 kgSb-eq. However, GHG emission was 1.96E+03 kgCO₂eq., and the amount of resource consumption was 1.54E+01 kgSb-eq. during recycling. Considering the major substances affecting GHG emissions and amount of resource consumption, CO₂ was found to significantly affect GHG emissions, accounting for 91.42% in disposal and 98.37% in recycling. The major substance affecting the amount of resource consumption was hard coal, which accounted for 40.63% in disposal and 60.73% in recycling. Upon recycling 1 kg palladium, 8,967.17 kgCO₂eq. of greenhouse gas emission was reduced, while the resource consumption was reduced to 10.10 kg Sb-eq. In addition, the direct palladium resource reduction rate due to palladium recycling was 50%.