• Journal of the Korean Society for Precision Engineering
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• v.29 no.4
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• pp.479-486
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• 2012

Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.554-562
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• 2012

Processing of Scanning electron microscope imaging has been analyzed in both secondary electron (SE) imaging and backscattered electron (BSE) image. Because of unique characteristics of both secondary electron and backscattered electron image, mechanism of imaging process and image quality are quite different each other. For the sake of characterize imaging process, Monte Carlo simulation code have been developed. It simulates electron penetration and depth profile in certain material. In addition, secondary electron and backscattered electron generation process as well as their spatial distribution and energy characteristics can be simulated. Geometries that has fundamental feature have been imaged using the developed Monte Carlo code. Two, SE and BSE images generation process will be discussed. BSE imaging process can be readily used to discriminate in both material and geometry by simply changing position and direction of BSE detector. The developed MC code could be useful to design BSE detector and their position. Furthermore, surface reconstruction technique is possibly developed at the further research efforts. Basics of Monte Carlo simulation method will be discussed as well as characteristics of SE and BSE images.