• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.9
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• pp.1615-1622
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• 2008

We have fabricated the poly-silicon thin film transistor(TFT) which has the LDD-region with graded spacer. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $H_2$/plasma processes were fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring/analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplicities of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.82-82
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• 2014

마감 도장이 완료된 면이 장기간 노출된 상태에서 후속 작업으로 인해 금속 분진 등의 오염물이 쌓이면 수분 및 염분 등과의 반응으로 도장 표면에 녹 등의 2차 오염이 발생하여 광택이나 표면 미려함 등을 잃어버리게 된다. 이럴 경우 소요되는 시간과 경비를 줄이기 위해 재도장 작업 대신 도장 표면의 오염 막을 제거하기 위한 방법으로 rust remover가 사용되고 있으나, 현재 rust remover 사용에 따른 도막 열화에 관한 객관적인 자료가 없는 실정이다. 본 연구에서는 당에서 사용되고 있는 선박용 마감 도료를 대상으로 rust remover가 도막 표면 열화에 미치는 영향에 대하여 조사 검토하다.

• Korean Chemical Engineering Research
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• v.61 no.3
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• pp.362-367
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• 2023

Recently, research and development of proton exchange membrane fuel cells (PEMFC) membranes are progressing in the direction of thinning to reduce prices and improve performance. Demand for hydrogen-powered vehicles for commercial vehicles is also increasing, and their durability should be five times greater than those for passenger vehicles. Despite the thinning of the membranes, the durability of the membranes must be increased five times, so the improvement of the durability of the membranes has become more important. Since the acceleration durability evaluation time also needs to be shortened, the protocol using oxygen instead of air in the existing protocol was applied to a 10 ㎛ thin membrane to evaluate durability. The accelerated durability test (Open circuit voltage holding) was terminated at 720 hours. If the air-based department of energy (DOE) protocol was used, a lifespan of 450,000 km of driving hours would be expected, with a durability of about 1,500 hours. During the chemical durability evaluation, the active area of the electrode decreased by 51%, suggesting that catalyst degradation had an effect on membrane durability. Reducing the catalyst degradation rate is expected to increase membrane durability.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1422-1423
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• 2011

Passivation 막이 증착될 때 산화물 반도체의 백 인터페이스에 주는 플라즈마 데미지와 화학적으로 유도된 데미지를 최소화하기 위하여 산화물 반도체의 보호막으로서 자가조립단분자막(SAM) 적용을 제안한다. TFT가 PECVD나 용액을 기반으로 한 재료로 passivation 될 때 산화물 반도체의 back interface는 플라즈마 데미지와 화학적으로 유도되는 데미지를 피할 수 없다. 자가조립단분자막을 적용함으로써 플라즈마 데미지를 막아줌으로써 이동도와 문턱전압 이하에서의 기울기(SS)의 열화와 용액을 기반으로 한 passivation으로 인한 특성변화(Von)를 최소화 하였다.

• Membrane Journal
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• v.4 no.3
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• pp.122-141
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• 1994

식품가공공장은 제품의 특성에 따라 필요로 되는 여러 가지의 단위공정이 조합되어 가동되고 있다. 식품제조 공정중 분리, 분획 및 농축은 매우 중요한 처리로 이를 위해서 증류, 증발, 원심분리, 여과 등의 조작이 절대적으로 필요하고, 최종 제품이 액상일 경우 유통중 변질 발생을 방지하기 위해 살균 공정을 반드시 거치도록 되어 있다. 또한 제품의 생산과정 중 사용되는 폐수에 의한 환경오염을 막기 위해서 폐수정화시설이 필수적으로 되어 있다. 이러한 대부분의 조작과정 중에는 열처리가 반드시 수반됨에 다라 가공원료 중에 함유된 각종 영양 성분이 부분적으로 열에 의해 파괴되고 냄새나 색 등이 변함에 따라 제품의 품질이 열화됨은 물론, 에너지 비용, 관련시설의 설치에 소요되는 부지, 시설비 및 운영비 등이 많이 필요로 된다.

• Journal of the Korea Society for Simulation
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• v.17 no.2
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• pp.13-19
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• 2008

New Buffered deposition is proposed to decrease junction electric field in this paper. Buffered deposition process is fabricated after first gate etch, followed NM1 ion implantation and deposition & etch nitride layer. New Buffered deposition structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of Buffered deposition and conventional. Also, we design a test pattern including NMOSFET, PMOSFET, LvtNMOS, High pressure N/PMOSFET, so that we can evaluate DC/AC hot carrier degradation on-chip. As a result, we obtained 10 years hot carrier life time satisfaction.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.133-133
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• 2012

알루미늄(Al)은 노출 환경 중 치밀한 산화 또는 수산화 보호성 피막을 생성하여 강재를 부식환경으로부터 차단하는 역할을 한다. 또한 그 피막이 열화 또는 파괴되어 모재인 철이 노출되는 경우 철을 대신하여 희생양극으로 작용함으로써, 철의 부식을 지연시키는 역할을 한다. 한편, 마그네슘(Mg)은 매우 활성인 금속으로 우수한 희생양극 역할을 수행하나, 높은 활성에 의하여 자체 소모가 크기 때문에 단독으로 사용하기는 어렵다. 따라서 강재 표면에 알루미늄과 마그네슘을 다층으로 표면처리하게 될 경우 상기에서 언급한 보호적 특성과 희생양극적 성능에 의한 내식성 향상을 기대 할 수 있을 것으로 사료된다. 본 연구에서는 진공증착을 이용하여 강재에 두께 비에 따라 Al-Mg계 코팅막을 제작하여 내식성을 비교-분석하였다.

• Korean Chemical Engineering Research
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• v.61 no.2
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• pp.189-195
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• 2023

As a PEMFC (Polymer Exchange Membrane Fuel Cell) cathode catalyst, Pt-Co/C has recently been widely used because of its improved durability. In a fuel cell, electrodes and electrolytes have a close influence on each other in terms of performance and durability. The effect on the electrochemical durability of the electrolyte membrane when Pt-Co/C was replaced in the Pt/C electrode catalyst was studied. The durability of Pt-Co/C MEA (Membrane Electrode Assembly) was higher than that of Pt/C MEA in the electrochemical accelerated degradation process of PEMFC membrane. As a result of analyzing the FER (Fluorine Emission Rate) and hydrogen permeability, it was shown that the degradation rate of the membrane of Pt-Co/C MEA was lower than that of Pt/C MEA. In the OCV (Open Circuit Voltage) holding process, the rate of decrease of the active area of the Pt-Co/C electrode was lower than that of the Pt/C electrode, and the amount of Pt deposited on the membrane was smaller in Pt-Co/C MEA than in Pt/C MEA. Pt inside the polymer membrane deteriorates the membrane by generating radicals, so the degradation rate of the membrane of Pt/C MEA with a high Pt deposition rate was higher than Pt-Co/C MEA. When the Pt-Co/C catalyst was used, the electrode durability was improved, and the amount of Pt deposited on the membrane was also reduced, thereby improving the electrochemical durability of the membrane.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.116-116
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• 2006