• Journal of Sensor Science and Technology
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• v.18 no.5
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• pp.349-352
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• 2009

This paper describes the fabrication and characteristics of micro heaters built on AlN($0.1{\mu}m$)/3C-SiC($1{\mu}m$) suspended membranes by surface micromachining technology. In this work, 3C-SiC and AlN films are used for high temperature environments. Pt thin film was used as micro heaters and temperature sensor materials. The resistance of temperature sensor and the power consumption of micro heaters were measured and calculated. The heater is designed for operating temperature up to about $800^{\circ}C$ and can be operated at about $500^{\circ}C$ with a power of 312 mW. The thermal coefficient of the resistance(TCR) of fabricated Pt resistance of temperature detector(RTD)'s is 3174.64 ppm/$^{\circ}C$. A thermal distribution measured by IR thermovision is uniform on the membrane surface.

• Journal of Advanced Marine Engineering and Technology
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• v.36 no.8
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• pp.1097-1103
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• 2012

There are many fish farms being cultivated in the southwestern cost of South Korea. Because the farms cultivating use the basic method that inflow and circulate sea-water, slight negligence and bad design cause major negative impact on fish deaths. Also, the optimal temperature for each specie of fishes has already been proven to differ on each specie. Maintaining this environment, regardless of seasons, is very difficult and that requires research to develop. In this paper, basic characteristics of heat and mechanism of heat transfer are studied. Based on this, Open-end water vessel is designed and constructed using sandwich-insulation panels and simulated to store the heat in certain isolated space. This study confirmed that it is possible to keep constant temperature by this method, in large areas of water where it is insulated by heat insulator. and equipped with heater in Open-end water vessel where the other part is heated. The AC power controller maintains the constant temperature required and the temperature controller detects and displays the temperature by using the micro-processor.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.39-46
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• 2017

This paper presents the fabrication of ceramic insulation layer on metallic heat spreading substrate, i.e. an insulated metal substrate, for planar type heater. Aluminum alloy substrate is preferred as a heat spreading panel due to its high thermal conductivity, machinability and the light weight for the planar type heater which is used at the thermal treatment process of semiconductor device and display component manufacturing. An insulating layer made of ceramic dielectric film that is stable at high temperature has to be coated on the metallic substrate to form a heating element circuit. Two technical issues are raised at the forming of ceramic insulation layer on the metallic substrate; one is delamination and crack between metal and ceramic interface due to their large differences in thermal expansion coefficient, and the other is electrical breakdown due to intrinsic weakness in dielectric or structural defects. In this work, to overcome those problem, selected metal oxide buffer layers were introduced between metal and ceramic layer for mechanical matching, enhancing the adhesion strength, and multi-coating method was applied to improve the film quality and the dielectric breakdown property.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.55-61
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• 2010

The device with tantalum silicide heater were bonded by Ag paste and Au SBB(Stud Bump Bonding) onto the Au coated substrate. The shear test after Au ABB and the thermal performance under current stressing were measured. The optimum condition of Au SBB was determined by fractured surface after die shear test and $350^{\circ}C$ for substrate, $250^{\circ}C$ for die during flip chip bonding with bonding load of about 300 g/bump. With applying 5W through heater on the device, the maximum temperature with Ag paste bonding was about $50^{\circ}C$. That with Au SBB on Au coated Si substrate showed $64^{\circ}C$. The difference of maximum temperatures is only $14^{\circ}C$, even though the difference of contact area between Ag paste bonding and Au SBB is by about 300 times and the simulation showed that the contact resistance might be one of the reasons.

• Transactions of the KSME C: Technology and Education
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• v.3 no.4
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• pp.265-271
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• 2015

The bonding process should be achieved in vacuum environment to avoid air bubble. In this study, we studied about pressure uniformity that became an issue in thermo compression bonding usually. Uniform press is realized by the method that use air spring and metal form spring. The concept of uniform press using air spring is removed except pressing direction in the press processing so angle between the vector of pressure surface and the pressure axis is parallel automatically. Air spring compensate the errors of machining and assembly. Metal form compensate the thermal deformation and flatness error.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.49-54
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• 2002

Cobalt silcides thin films were prepared on Poly-Si/$SiO_2$/Si substrates by Co metal depostion using E-beam evaporation method and rapid thermal annealing for the application of inkjet printing heater. The crystal phases and composition distributions of the films were investigated as functions of the rapid thermal annealing (RTA) temperatures (600~$900^{\circ}C$) and times (20~40 sec). The high temparature thermal stability was also investigated by the analysis of sheet resistance and crystalline properties. The stable $CoSi_2$ phases were obtained by the RTA annealing at $800^{\circ}C$ for 20 seconds showing $0.8 \Omega /\Box$ of sheet resitance. However, the sheet resistances were sharply increased at below $700^{\circ}C$ due to changes of crystalline phases. The temperature resistance coefficient of heating elements was found to be about $0.0014/^{\circ}C$, and the obtained cobalt silicided films can be applied to the printer heating elements.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.1-7
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• 2003

The crystallized stable cobalt silicide$(CoSi_2)$ films were prepared on $poly-Si/SiO_2/Si$substrates for the application of inkjet printing head as a heating element with omega shape. The structural images and temperature resistance coefficient were investigated. The value of temperature resistance coefficient of the heating element was found to be about $0.0014/^{\circ}C$. The maximum power of the heating element was 2 W at the applied voltage of 2 V, 10 kHz in frequency and $1{\mu}s$ in pulse width. From the investigation of fatigue property according to the repeated applied voltages, there was no drastic changes in the resistances of heating element under the condition of $10^8$ pulsed cycles at below 15 V biased voltage. In contrast, the resistance of heating element was greatly increased at $10^6$ pulsed cycles when the heating element was operated at 17 V.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.44 no.5
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• pp.455-462
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• 2016

Output Characteristics of the spaceborn image sensor such as infrared(IR) sensor are varied according to time elapses and sensor repetition on/off operation. As a result, the quality of IR sensor image is decreased. Therefore, spaceborne image sensor require a periodic calibration using a black body system by correcting a non-uniformity of the sensor. In this paper, we proposed a MEMS-based black body system that can implement the high temperature uniformity at various standard temperatures ranging from low to high temperature and easily estimate the representative surface temperature. In addition, it has advantages lightweight, low-power and high accuracy. The feasibility of the proposed MEMS-based black body system was verified through the thermal analysis.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.11
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• pp.544-547
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• 2006

In this paper, we present a temperature-controlled system for MEMS electrical resistance heaters without a temperature sensor. To rapidly control the heater temperature, the microheater system developed consists of a power supply, power amplifier, digital ${\underline{P}}roportional-{\underline{I}}ntegral-{\underline{D}}ifferential$ (PID) controller, and a quarter bridge circuit with the microheater and three resistors are nominally balanced. The microheaters are calibrated inside a convection oven to obtain the temperature coefficient with a linear or quadratic fit. A voltage amplifier applies the supply voltage proportional to the control signal from the PID controller. Small changes in heater resistance generate a finite voltage across the quarter bridge circuit, which is fed back to the PID controller to compare with the set-point and to generate the control signal. Two MEMS microheaters are used for evaluating the developed control system - a NiCr serpentine microheater for a preconcentrator and a Nickel microheater for ${\underline{P}}olymerase\;{\underline{C}}hain\;{\underline{R}}eaction$ (PCR) chip.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.68 no.1
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• pp.69-76
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• 2019

Microheaters with different structures were fabricated and compared to find an optimal configuration enhancing the performances of $C_2H_2$ gas sensor. Three temperature sensors were integrated on the surface of the insulation layer over the microheater, and resistance changes were observed to check the generated heat from the microheater. A low operating voltage of 1mV was applied to the temperature sensor to minimize any influence of thermal heat from the resistance type temperature sensor, whereas high voltages in the range between 10 and 20V were applied to the microheater. A microheater structure generating maximum heat at low voltage was determined. The generated heat was verified by the temperature sensors on the top of the $Si_3N_4$ and infrared camera. A long term stability and accuracy of the microheater were observed. The developed microheater was applied to enhance the performances of $C_2H_2$ gas sensor and successfully confirmed that the developed microheater greatly contributes to the improvement of sensitivity and selectivity of gas sensor.