• Journal of Power System Engineering
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• v.5 no.1
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• pp.73-79
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• 2001

정전기력을 이용하는 마이크로가속도계 센서는 단결성 실리콘 SOI(Silicon On Insulator) 웨이퍼의 기판에 절전재료 적층과 등방성 및 이방성 부식공정으로 제작한다. 마이크로가속도 센서 개발에는 3차원 미소구조체의 제작공정에서 가열 및 냉각공정의 온도구배로 야기되는 포핑업과 같은 열변형 해석이 최적 형상설계에 중요한 요건이다. 본 연구에서는 양자역학적 현상인 턴널링전류 원리로 승용차 에어백의 검침부 역할을 하는 마이크로가속도 센서의 제조공정에서 소착현상을 방지하는 부가 비임과 턴널갭의 FIB 절단가공과 백금 적층공정의 열적 거동을 해석한다. 마이크로머시닝 공정에서 온도의존성을 고려하여 연성해석하고 유한요소법의 상용코드인 MARC K6.1로 분석한 결과를 단결정 실리콘 웨이퍼로 가공하는 마이크로가속도 센서의 최적공정 및 형상설계를 위한 기초자료로 활용될 수 있을 것으로 기대된다.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2111-2113
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• 2001

본 논문에서는 MEMS 기술에 의해 제작된 마이크로 가속도계를 위한 신호 검출 및 처리회로를 설계 제작하였으며, 레이트 테이블을 이용한 실험을 통해 제작된 센서 및 신호처리회로의 성능을 시험하였다. 본 논문에서 제시한 가속도계는 입력 가속도에 따라 용량이 변하는 방식으로, 두개의 김블 구조를 가지므로 타축 입력 가속도의 영향을 적게 받는 장점이 있다. 또한 감지전극의 효과적 배치를 통해 감도가 커지도록 설계되었다. 신호검출 및 처리는 여기 신호를 이용한 차분검출방식을 이용하였다. 이 방식은 구성이 복잡한 단점이 있으나, 잡음 신호와 검출 신호를 주파수 영역에서 분리시킬 수 있으며, 기생용량의 영향을 감소시키고 전기적 감도를 증가시키는 장점이 있다. 실험을 통해 제시한 신호검출 및 처리방식을 이용할 경우 가속도계의 성능이 향상되는 것을 확인하였다.

• Journal of Power System Engineering
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• v.5 no.2
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• pp.36-42
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• 2001

This paper deals with finite element analyses of residual stresses causing popping up which are induced in micromachining processes of a microaccelerometer sensors. The paddle of the micro accelerometer sensor is designed symmetric with respect to the direction of the beam. After heating the tunnel gap up to 100 degree and get it through the cooling process and the additional beam up to 80 degree and get it through the cooling process. We learn the thermal internal stresses of each shape and compare the results with each other, after heating the tunnel gap up to 400 degree during the Pt deposition process. Finally we find the optimal shape which is able to minimize the internal stresses of microaccelerometer sensor. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensor by electrostatic force.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2000.05a
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• pp.100-104
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• 2000

This paper deals with finite element analyses of residual stresses causing popping up which are induced in micromachining processes of a mcroaccelerometers. After heating the tunnel gap up to 100 degree and get it through the cooling process and the additional bean up to 80 degree and get is through the cooling process. We learn the thermal internal stress of each shape and compare the results with each other after heating the tunnel gap up to 400 degree during the Pt deposition process. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer by electrostatic force.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.4
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• pp.12-18
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• 2002

Silicon on insulator(SOI) wafer is used in a variety of microsensor applications in which thermal deformations and other mechanical effects may dominate device Performance. One of major Problems associated with the manufacturing Processes of the microaccelerometer based on the tunneling current concept is thermal deformations and thermal stresses. This paper deals with finite element analysis(FEA) of residual thermal deformations causing popping up, which are induced in micrormaching processes of a microaccelerometer. The reason for this Popping up phenomenon in manufacturing processes of microaccelerometer may be the bending of the whole wafer or it may come from the way the underetching occurs. We want to seek after the real cause of this popping up phenomenon and diminish this by changing manufacturing processes of mic개accelerometer. In microaccelerometer manufacturing process, this paper intend to find thermal deformation change of the temperature distribution by tunnel gap and additional beams. The thermal behaviors analysis intend to use ANSYS V5.5.3.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2000.04a
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• pp.579-584
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• 2000

Single crystal silicon (SCS) is used in a variety of microsensor applications in which stresses and other mechanical effects may dominate device performance. The authers model temperature dependent mechnical properties during focused io beam(FIB) cutting and Pt deposition processes. In microaccelero-meter manufacturing process, this paper intend to find thermal displacement change of the temperature by tunnel gap, additional beam part and pt deposition. The thermal analysis intend to use ANSYS V5.5.3.

• Journal of the Korean Institute of Intelligent Systems
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• v.14 no.4
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• pp.445-450
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• 2004

This paper describes an optimal design system for multi-disciplinary structural design. An automatic finite element (FE) mesh generation technique, which is based on the fuzzy knowledge processing and computational geometry technique, is incorporated into the system, together with a commercial FE analysis code and a commercial solid modelers. An optimum design solution or satisfactory solutions are then automatically searched using the genetic algorithms modified for real search space, together with the automated FE analysis system. With an aid of genetic algorithms, the present design system allows us to effectively obtain a multi-dimensional solutions. The developed system is successfully applied to the shape design of a micro accelerometer based on a tunnel current concept.

• Journal of Advanced Marine Engineering and Technology
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• v.25 no.3
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• pp.631-635
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• 2001

The major problems associated with the manufacturing processes of the microaccelerometer based on the tunneling current concept is the residual stress. This paper deals with finite element analysis of residual stress causing pop up phenomenon which are induced in micromachining processes for a microaccelerometers sensor using silicon on insulator(SOI) wafer. After heating the tunnel gap up to $100^{\circ}C$and get it through cooling process and the additional beam up to $80^{\circ}C$get it through the cooling process. We learn the residual stress of each shape and compare the results with each other, after heating the tunnel gap up to $400^{\circ}Cduring$ the Pt deposition process. The equivalent stresses produced during the heating process of focused ion beam(FIB) cut was also to be about $0.02~0.25Pa/^{\circ}C$and cooling process the gradient of residual stresses of about $8.4\{times}10^2Pa/{\mu}m$ still at cantilever beam and connected part of paddle. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensors.

• Journal of the Korean Society of Mechanical Technology
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• v.13 no.4
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• pp.93-99
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• 2011

This paper presents a new type of optical silicon accelerometer using deep reactive ion etching (DRIE) and micro-stereolithography technology. Optical silicon accelerometer is based on a mass suspended by four vertical beams. A vertical shutter at the end of the mass can only moves along the sensing axis in the optical path between two single-mode optical fibers. The shutter modulates intensity of light from a laser diode reaching a photo detector. With the DRIE technique for (100) silicon, it is possible to etch a vertical shutter and beam. This ensures low sensitivity to accelerations that are not along the sensing axis. The microstructure for sensor packaging and optical fiber fixing was fabricated using micro stereolithography technology. Designed sensors are two types and each resonant frequency is about 15 kHz and 5 kHz.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2000.05a
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• pp.105-109
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process