• Title/Summary/Keyword: 마스크리스 패턴

Search Result 9, Processing Time 0.025 seconds

Study of microprism array of optical system in maskless lithography (마스크리스 노광장치용 마이크로프리즘 어레이에 관한 연구)

  • Jeong, Gwang-Jin;HwangBo, Chang-Gwon
    • Proceedings of the Optical Society of Korea Conference
    • /
    • 2009.02a
    • /
    • pp.225-226
    • /
    • 2009
  • 본 연구에서는 마스크리스 노광장치의 두 프로젝션 광학계 사이에 있는 마이크로프리즘 어레이에 관한 연구이다. 마이크로프리즘의 원리와 종류에 대해 알아보고, 마이크로프리즘의 출사부의 모양에 따라 패턴의 모양이 변함을 확인하였다. 그리고 원하는 패턴을 만들 수 있는 마이크로프리즘을 설계하였다.

  • PDF

Study on the Masking Effect of the Nanoscratched Si (100) Surface and Its Application to the Maskless Nano Pattern fabrication (마스크리스 나노 패턴제작을 위한 나노스크래치 된 Si(100) 표면의 식각 마스크 효과에 관한 연구)

  • 윤성원;강충길
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.21 no.5
    • /
    • pp.24-31
    • /
    • 2004
  • Masking effect of the nanoscratched silicon (100) surface was studied and applied to a maskless nanofabrication technique. First, the surface of the silicon (100) was machined by ductile-regime nanomachining process using the scratch option of the Nanoindenter${ \circledR}$ XP. To clarify the possibility of the nanoscratched silicon surfaces for the application to wet etching mask, the etching characteristic with a KOH solution was evaluated at room temperature. After the etching process, the convex nanostructures were made due to the masking effect of the mechanically affected layer. Moreover, the height and the width of convex structures were controlled with varying normal loads during nanoscratch.

A Study of Mastless Pattern Fabrication using Stereolithography (광조형을 이용한 마스크리스 패턴형성에 관한 연구)

  • 정영대;조인호;손재혁;임용관;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2002.05a
    • /
    • pp.503-507
    • /
    • 2002
  • Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

  • PDF

Cost Effective Fabrication of a Triboelectric Energy Harvester Using Soft Lithography (소프트 식각법을 이용한 효율적 제작방식의 마찰전기 에너지 수확소자 개발)

  • Lee, Jun-Young;Sung, Tae-Hoon;Yeo, Jong-Souk
    • Journal of the Korean Vacuum Society
    • /
    • v.22 no.4
    • /
    • pp.198-203
    • /
    • 2013
  • Energy harvesting refers to converting ambient energy from our surroundings, which would be otherwise wasted, into useful electrical energy. A triboelectric energy harvester is a self-charged device for harnessing mechanical energy based on a coupled process of contact charging and electrostatic induction. In this research, we demonstrate simple fabrication of prototype triboelectric energy harvester using soft lithography and its electrical characterization. Triboelectric generation occurs between the two micro patterned layers of Au and PDMS. A micro pattern is simply replicated directly from the bottom layer to the top layer using soft-lithography without an extra transfer process. This generator can produce an output voltage of 2 V and output current of 20 nA.

A Study on the Polymer Lithography using Stereolithography (광조형법을 이용한 고분자 리소그래피에 관한 연구)

  • Jung Young Dae;Lee Hyun Seop;Son Jae Hyuk;Cho In Ho;Jeong Hae Do
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.22 no.1
    • /
    • pp.199-206
    • /
    • 2005
  • Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.

Maskless Pattern Fabrication on Si (100) Surface by Using Nano Indenter with KOH Wet Etching (나노인덴터와 KOH 습식 식각 기술을 병용한 Si(100) 표면의 마스크리스 패턴 제작 기술)

  • 윤성원;신용래;강충길
    • Transactions of Materials Processing
    • /
    • v.12 no.7
    • /
    • pp.640-646
    • /
    • 2003
  • The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as potential application to fabricate the surface nanostructures because of its operational versatility and simplicity. The objective of the work is to suggest new mastless pattern fabrication technique using the combination of machining by nanoindenter and KOH wet etching. The scratch option of the nanoindenter is a very promising method for obtaining nanometer scale features on a large size specimen because it has a very wide working area and load range. Sample line patterns were machined on a silicon surface, which has a native oxide on it, by constant load scratch (CLS) of the Nanoindenter with a Berkovich diamond tip, and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structure was made because of masking effect of the affected layer generated by nano-scratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved patterns can be used as a mold that will be used for mass production processes such as nanoimprint or PDMS molding process. All morphological data of scratch traces were scanned using atomic force microscope (AFM).

A Study on The Burr Minimization by The Chemical Mechanical Micro Machining(C3M) (화학 기계적 미세 가공기술에 의한 버 최소화에 관한 연구)

  • Lee, Hyeon-U;Park, Jun-Min;Jeong, Sang-Cheol;Jeong, Hae-Do;Lee, Eung-Suk
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.18 no.12
    • /
    • pp.177-184
    • /
    • 2001
  • C3M(chemical mechanical micro machining) is applied for diminishing the size of burr and fabricating the massless patterning for aluminium wafer(thickness of 1${\mu}m$). It is difficult to perform the micro size machining with the radically increased shear stress. While the miniaturization and function-orientation of parts has been needed in the many field such as electronics, optics and medicine. etc., it is not enough to satisfy the industry needs in the machining technology. In this paper feasibility test of diminishing burr and fabricating maskless pattern was experimented and analyzed. In the experiment oxide layer was farmed on the aluminium with chemical reaction by ${HNO_3}$(10wt%), then the surface was grooved with tungsten carbide tool for the different condition such as the load and fred rate. The result was compared with the conventional machining to show the improvement of C3M with SEM for burr diminish and XPS for atomic existence, AFM for more precise image.

  • PDF

Development of Microlens Array for Maskless Lithography Application (Maskless lithography 응용을 위한 마이크로렌즈 어레이 개발)

  • Nam, Min-Woo;Oh, Hae-Kwan;Kim, Geun-Young;Seo, Hyun-Woo;Wei, Chang-Hyun;Song, Yo-Tak;Yang, Sang-Sik;Lee, Kee-Keun
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.16 no.4
    • /
    • pp.33-39
    • /
    • 2009
  • A microlens array (MLA) was developed based on the wet-etched quartz substrate and coating of UV adhesive on the substrate for maskless lithography application. The developed MLA has the focal length of ${\sim}45\;{\mu}m$ and the spot size of ${\sim}1\;{\mu}m$. The spot size of the focused beam passing through the MLA was detected by CCD camera, and its intensity was monitored by beam profiler. Uniform spots with nearly identical intensities were observed on the focal plane when a beam passes through the fabricated MLA. The focal length was varied depending on thickness of the coated UV adhesive. The thicker the thickness of the UV adhesive was, the shorter the focal length of the MLA was. With a general mask aligner, UV beam focusing was tested onto photoresist (PR). The beams were well focused onto PR when UV passes through the MLA. Depending on the variable distances from the MLA, beam sizes onto PR were controlled. Even at high temperature for a long time, the performances of the MLA were not changed.

  • PDF