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Study on the Masking Effect of the Nanoscratched Si (100) Surface and Its Application to the Maskless Nano Pattern fabrication  

윤성원 (부산대 틱소/레오성형연구실(NRL))
강충길 (부산대 기계공학부)
Publication Information
Journal of the Korean Society for Precision Engineering / v.21, no.5, 2004 , pp. 24-31 More about this Journal
Abstract
Masking effect of the nanoscratched silicon (100) surface was studied and applied to a maskless nanofabrication technique. First, the surface of the silicon (100) was machined by ductile-regime nanomachining process using the scratch option of the Nanoindenter${ \circledR}$ XP. To clarify the possibility of the nanoscratched silicon surfaces for the application to wet etching mask, the etching characteristic with a KOH solution was evaluated at room temperature. After the etching process, the convex nanostructures were made due to the masking effect of the mechanically affected layer. Moreover, the height and the width of convex structures were controlled with varying normal loads during nanoscratch.
Keywords
Nanoscratch; Masking Effect; Mechanically affected layer; Anisotropic etching;
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Times Cited By KSCI : 2  (Citation Analysis)
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